1000 VOLT MOSFET Search Results

1000 volt mosfet

Abstract: ISS 355 L100B11 5026
Contextual Info: +,*+3 5 250$1&( 32:(5026)(76 SML L100B11 VDS ID RDSON = = = 1000 Volt 11 Amp 1 : SML L100B10 VDS ID RDSON 1000 Volt 10 Amp 1.1 : The SML L100B11 and SML L100B10 represent outstanding value for all your power applications that demand top performance MOSFETs.

800w power amplifier circuit diagram

Abstract: 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 1000w power amplifier circuit diagram 1000 watts amplifier schematic diagram with part 1200w power amplifier amplifier circuit diagram 1000 watt 300w mosfet power amplifier circuit diagram 1200w amplifier "Good RF Construction Practices and Techniques"
Contextual Info: APPLICATION NOTE APT9502 By Kenneth W. Dierberger APT9502 LOW COST 1000 WATT, 300 VOLT RF POWER AMPLIFIER FOR 13.56 MHz Presented at RF EXPO EAST 1995 Page 1 Low Cost 1000 Watt, 300 Volt RF Power Amplifier for 13.56MHz Kenneth Dierberger Applications Engineering Manager

1000w power amplifier circuit diagram

Abstract: 800w power amplifier circuit diagram 1200w power amplifier circuit diagram amplifier circuit diagram class D 1000w 500 watt mosfet power amplifier circuit diagram 27.12MHz power amplifier APT9701 1000 watt ferrite transformer ar164 hf 800w power Amplifier diagram
Contextual Info: APPLICATION NOTE APT9701 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz 1 Low Cost 1000 Watt 300 Volt RF Power Amplifier for 27.12MHz Richard Frey, P.E., RF Applications Engineering, Advanced Power Technology Inc, Bend, OR ABSTRACT directly to a single stage PFC regulated power supply

MTC3N100E

Abstract: SHD218414 SHD218414A SHD218414B
Contextual Info: SHD218414 SHD218414A SHD218414B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 3.0 Ohm, 3A MOSFET • Electrically Isolated, Hermetically Sealed • Electrically Equivalent to MTC3N100E

Contextual Info: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 3.0 Ohm, 3A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to MTC3N100E MAXIMUM RATINGS

Contextual Info: SENSITRON SEMICONDUCTOR SHD218414 SHD218414A SHD218414B TECHNICAL DATA DATA SHEET 780, REV. - HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 3.0 Ohm, 3A MOSFET œ Electrically Isolated, Hermetically Sealed œ Electrically Equivalent to MTC3N100E MAXIMUM RATINGS

IRFAG50

Abstract: SHD218508 SHD218508A SHD218508B shd2188
Contextual Info: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: • 1000 Volt, 2.0 Ohm, 5.6A MOSFET • • • • Hermetic Ceramic Package Fast Switching

Contextual Info: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 2.0 Ohm, 5.6A MOSFET œ Hermetic Ceramic Package œ Fast Switching œ Low RDS on

shd2188

Abstract: sensitron
Contextual Info: SHD218508 SHD218508A SHD218508B SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 2023, REV. Formerly Part Number SHD2188/A/B HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 2.0 Ohm, 5.6A MOSFET œ Hermetic Ceramic Package œ Fast Switching œ Low RDS on

benq

Abstract: SDF2N100
Contextual Info: JfaMtxon PRODUCT DEVICES.INC. CÂTÂI ' N-CHANNEL ENHANCEMENT MOS FET ABSOLUTE MAXIMUM RATINGS PARAMETER „ SYMBOL Drain-source Volt. l Drain-Gate Voltage 1000 Vdc 1000 Vdc ±20 Vdc 2 Ade 8 75 A W 0.6 W/°C -55 TO +150 1.7 300 "C/W VDSS VDGR (RfiS-l.OMn) (1)

527 39a

Contextual Info: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE

1000 volt mosfet

Abstract: shd226801
Contextual Info: SENSITRON SEMICONDUCTOR SHD226801 TECHNICAL DATA DATA SHEET 4341, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 4 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25°C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE

SHD226408

Contextual Info: SENSITRON SEMICONDUCTOR SHD226408 TECHNICAL DATA DATA SHEET 472, REV - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED. RATING GATE TO SOURCE VOLTAGE

1000 volt mosfet

Abstract: SHD225613 SHD2258
Contextual Info: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.05 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to 12N100 Series

451 MOSFET

Contextual Info: SENSITRON SEMICONDUCTOR SHD225617 TECHNICAL DATA DATA SHEET 451, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.2 Ohm, 10A MOSFET œ Isolated Hermetic Metal Package œ Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

shd225617

Abstract: 1000 volt mosfet
Contextual Info: SENSITRON SEMICONDUCTOR SHD225617 TECHNICAL DATA DATA SHEET 451, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.2 Ohm, 10A MOSFET œ Isolated Hermetic Metal Package œ Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

shd2258

Contextual Info: SENSITRON SEMICONDUCTOR SHD225613 TECHNICAL DATA DATA SHEET 196, REV. A Formerly Part Number SHD2258 HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 1.05 Ohm, 12A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on œ Equivalent to 12N100 Series

DIODE S3V 70

Abstract: DIODE S3V 52 MOSFET 6A irfmg50 IRFMG50 IRFMG50D LSE 0149
Contextual Info: Data Sheet No. PD-9.711A INTERNATIONAL RECTIFIER I O R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG5Q N-CHANNEL 1000 Volt, 2.0 Ohm HEXFET Product Summary The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

710a

Abstract: IRFMG40 IRFMG40D IRFMG40U
Contextual Info: Data Sheet No. PD-9.710A INTERNATIONAL RECTIFIER llO R l REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFMG4Q N-CHANNEL Product Summary 1000 Volt, 3.5 Ohm HEXFET The HEXFET® technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: SENSITRON SEMICONDUCTOR SHD225508 TECHNICAL DATA DATA SHEET 229, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 2.0 Ohm, 6.0A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

shd225508

Contextual Info: SENSITRON SEMICONDUCTOR SHD225508 TECHNICAL DATA DATA SHEET 229, REV. A HERMETIC POWER MOSFET N-CHANNEL FEATURES: œ 1000 Volt, 2.0 Ohm, 6.0A MOSFET œ Isolated Hermetic Metal Package œ Fast Switching œ Low RDS on MAXIMUM RATINGS ALL RATINGS ARE AT TC = 25•C UNLESS OTHERWISE SPECIFIED.

Contextual Info: SENSITRON SEMICONDUCTOR SHD226208 TECHNICAL DATA DATA SHEET 835, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 1000 VOLT, 1.4 AMP, 11 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

mosfet amp ic

Contextual Info: SENSITRON SEMICONDUCTOR SHD226208 TECHNICAL DATA DATA SHEET 835, REV. - HERMETIC POWER MOSFET N-CHANNEL DESCRIPTION: A 1000 VOLT, 1.4 AMP, 11 OHM MOSFET IN A HERMETIC TO-257 PACKAGE. MAXIMUM RATINGS RATING GATE TO SOURCE VOLTAGE CONTINUOUS DRAIN CURRENT ALL RATINGS ARE AT TA = 25•C UNLESS OTHERWISE SPECIFIED.

smd diode 39a

Abstract: N CHANNEL MOSFET 10A 1000V IRFNG40
Contextual Info: Provisional Data Sheet No. PD-9.1555 HEXFET POWER MOSFET IRFNG40 N-CHANNEL Ω HEXFET 1000 Volt, 3.5Ω Product Summary HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry achieves very low onstate resistance combined with high transconductance.