100083 Search Results

Contextual Info: REV. DATE ECR NO. DESCRIPTION A 1 0 /2 9/ 02 - MODIFY DESCRIPTION B 02/25/09 100083 UPDATE DRAWING FORMAT DETAIL - A 2X SCALE o ro cO RECOMMENDED MOUNTING HOLE o1 o o o >— J •— j 00 CD o LO o m CN UNLESS OTHERWISE SPECIFIED DIMENSIONS ARE IN MILLIMETERS. DIMENSIONS IN [ ] ARE IN

MP6812

Contextual Info: ANALOGIC CORP Û7 Î>ËJ'GaifciTPD 0 □ 0 211 S~1T|~~ T ' - S ' / - ^ ADDENDUM SHEET December 1976 MP6848 Multiplexer Expansion Module for Analogic Subminiature Data-Acquisition Subsystems MP6812 & MP6912 A N A L O G 1C B Please make the following changes in Bulletin No. 16-100083, REV 0:

Contextual Info: ∅3.1 1.1 1.5 max ∅3.8 2.5 ? 0.5±0.5 DISCRETE LEDs - Ø 3mm White • • High Intensity • • Solid state reliability 4.4 1.0 3.5 Also available as a 5mm device Can be supplied in bulb replacement and panel mounting formats 5.4 100083 SERIES 10.4 MLQ = 50

Contextual Info: User’s Manual V850ES/KF2 32-bit Single-Chip Microcontrollers Hardware PD70F3728 μPD70F3729 Document No. U17704EJ2V0UD00 2nd edition Date Published December 2006 N CP(K) 2005 Printed in Japan [MEMO] 2 User’s Manual U17704EJ2V0UD NOTES FOR CMOS DEVICES

Contextual Info: User’s Manual V850ES/KG2 32-bit Single-Chip Microcontrollers Hardware PD70F3731 μPD70F3732 Document No. U17703EJ2V0UD00 2nd edition Date Published October 2006 N CP(K) 2005 Printed in Japan [MEMO] 2 User’s Manual U17703EJ2V0UD NOTES FOR CMOS DEVICES

Contextual Info: User’s Manual V850E/MA3 32-Bit Single-Chip Microcontrollers Hardware µPD703131A µPD703131AY µPD703132A µPD703132AY µPD703133A µPD703133AY µPD703134A µPD703134AY µPD703136A µPD703136AY µPD70F3134A µPD70F3134AY Document No. U16397EJ3V0UD00 3rd edition

Contextual Info: Preliminary User’s Manual V850ES/JF3-L 32-bit Single-Chip Microcontrollers Hardware PD70F3735 μPD70F3736 Document No. U18952EJ1V0UD00 1st edition Date Published February 2008 N 2008 Printed in Japan [MEMO] 2 Preliminary User’s Manual U18952EJ1V0UD

Contextual Info: User’s Manual 78K0R/KE3 16-bit Single-Chip Microcontrollers PD78F1142 μPD78F1143 μPD78F1144 μPD78F1145 μPD78F1146 The 78K0R/KE3 has an on-chip debug function. Do not use this product for mass production because its reliability cannot be guaranteed after the on-chip debug function

Contextual Info: Preliminary Data Sheet NX5522 Series LASER DIODE 1 550 nm FOR FTTH InGaAsP MQW-FP LASER DIODE R08DS0029EJ0100 Rev.1.00 Oct 06, 2010 DESCRIPTION The NX5522 Series is a 1 550 nm Multiple Quantum Well MQW structured Fabry-Perot (FP) laser diode with InGaAs monitor PIN-PD. These devices are

Contextual Info: PreliminaryData Sheet PD5754T7A R09DS0012EJ0100 Rev.1.00 Dec 22, 2010 SiGe/CMOS Integrated Circuit 4 x 2 IF Switch Matrix with Gain and Tone/Voltage Controller FEATURES • 4 independent IF channels, integral switching to channel input to either channel output

TH05-3H103F

Contextual Info: Datasheet R2A20055NS R03DS0074EJ0100 Rev.1.00 May 7, 2013 Lithium-Ion Battery Charger IC Description The R2A20055NS is a semiconductor integrated circuit designed for Lithium-ion battery chargers at spacelimited portable applications. The R2A20055NS simply controls to charge a battery with a small number of

Contextual Info: Preliminary Data Sheet PA2811T1L R07DS0191EJ0100 Rev.1.00 Jan 11, 2011 MOS FIELD EFFECT TRANSISTOR Description The μ PA2811T1L is P-channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of portable equipment.

Contextual Info: Preliminary Datasheet TBB1005 R07DS0315EJ1000 Previous: REJ03G0843-0900 Rev.10.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC VHF/UHF RF Amplifier Features • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet RJK0243DNS 25V, 25A, 9.6mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS1074EJ0110 Rev1.10 Mar 28, 2013 Features • • • • • • • Very high speed switching Capable of 4.5 V gate drive Low drive current High density mounting

TO-220FL

Contextual Info: Preliminary Datasheet RJP30E3DPP-M0 Silicon N Channel IGBT High Speed Power Switching R07DS0353EJ0200 Rev.2.00 Apr 15, 2011 Features • • • • • Trench gate technology G5H series Low collector to emitter saturation voltage VCE(sat) = 1.6 V typ High speed switching tf = 150 ns typ

Contextual Info: Preliminary Datasheet TBB1012 R07DS0317EJ0300 Previous: REJ03G1245-0200 Rev.3.00 Mar 28, 2011 Twin Built in Biasing Circuit MOS FET IC UHF/VHF RF Amplifier Features • • • • • • • Small SMD package CMPAK-6 built in twin BBFET; To reduce using parts cost & PC board space.

Contextual Info: Preliminary Datasheet RJK0348DPA 30V, 50A, 2.5m max. N Channel Power MOS FET High Speed Power Switching R07DS0912EJ0500 Rev.5.00 Mar 19, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: R32C/118 Group Datasheet Datasheet R32C/118 Group RENESAS MCU 1. R01DS0065EJ0120 Rev.1.20 Feb 6, 2013 Overview 1.1 Features The M16C Family offers a robust platform of 32-/16-bit CISC microcomputers MCUs featuring high ROM code efficiency, extensive EMI/EMS noise immunity, ultra-low power consumption, high-speed processing

RJK0652DPB

Contextual Info: Preliminary Datasheet RJK0652DPB 60V, 35A, 7.0m max. Silicon N Channel Power MOS FET Power Switching R07DS0077EJ0200 Rev.2.00 Apr 09, 2013 Features •     Low on-resistance RDS on = 5.5 m typ. (at VGS = 10 V)  Pb-free  Halogen-free

mobile phone basic block diagram

Abstract: PG2158T5K 2SC3357/NE85634 microwave Duplexer NE5510279A UPC8236 NE3517S03 UPG2156 NE662M04 SW SPDT
Contextual Info: RF AND MICROWAVE DEVICES SELECTION GUIDE − APPLICATION SYSTEM − October 2009 This document covers “Silicon Microwave Transistors”, “Silicon Microwave Monolithic ICs” and “Microwave GaAs Devices”. Caution GaAs Products This product uses gallium arsenide GaAs .

RJK03M2DPA

Contextual Info: Preliminary Datasheet RJK03M2DPA 30V, 45A, 2.8mΩmax. N Channel Power MOS FET High Speed Power Switching R07DS0766EJ0200 Rev.2.00 Feb 12, 2013 Features •       High speed switching Capable of 4.5 V gate drive Low drive current High density mounting

Contextual Info: Preliminary Datasheet RJK1055DPB 100V, 23A, 17m max. Silicon N Channel Power MOS FET Power Switching R07DS1058EJ0200 Previous: REJ03G1887-0100 Rev.2.00 Apr 11, 2013 Features • High speed switching  Low drive current  Low on-resistance RDS(on) = 13 m typ. (at VGS = 10 V)

Contextual Info: APPLICATION NOTE R20AN0264EJ0100 Integrated Development Environment e2 studio e2 studio with Subversion and plug-in Subversive Rev.1.00 Oct 16, 2013 Summary Subversion SVN is an open-source version control system. SVN allows developers to share their projects on

Contextual Info: TPS-1 User’s Manual: Hardware RENESAS ASSP Ethernet Controller for PROFINET IO Devices All information contained in these materials, including products and product specifications, represents information on the product at the time of publication and is subject to change by