1000A DIODE 5V Search Results

GTO thyristor 4500V 4000A

Abstract: FAST SWITCHING THYRISTOR ST GTO thyristor driver 10A fast Gate Turn-off Thyristor GTO thyristor GTO gate drive unit mitsubishi fast thyristor 200A gate control circuits GTO 4.5kv MITSUBISHI GATE TURN-OFF THYRISTOR gto gto Gate Drive circuit
Contextual Info: IEEE Industry Applications Society Annual Meeting St. Louis, Missouri, October 12-16, 1998 A NEW GATE COMMUTATED TURN-OFF THYRISTOR AND COMPANION DIODE FOR HIGH POWER APPLICATIONS John F. Donlon*, Eric R. Motto*, M. Yamamoto*, Takahiko Iida* *Powerex, Incorporated, Youngwood, PA 15697 USA

Contextual Info: P g jp i G E C PLESSEY DS4340-4.0 GP1000DHB06S POWERLINE N-CHANNELIGBT MODULE TYPICAL KEY PARAMETERS 600V v CES v* CE Mt 2.1V 1000A ^C(CONT) 2000A ^C(PK) 290ns tr 430ns t, APPLICATIONS • High Power Switching. ■ Motor Control. ■ UPS. ■ AC And DC Servo Drive Amplifiers.

ST1000EX21

Abstract: transistor JF 1000A diode 5V IGBT 1000A
Contextual Info: TOSHIBA ST1000EX21 TENTATIVE TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR ST1000EX21 Unit in mm HIGH PO W ER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS • • • All Electric contacts by Pressure Structure and Airtight Package Anti-Parallel Fast Recovery Diode in This Package

transistor JF

Abstract: ST1000EX21
Contextual Info: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package

diode k 1140

Contextual Info: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 911SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten

Schneider Electric sh 140

Contextual Info: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 911SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten

Schneider Electric sh 140

Contextual Info: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 911SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten

transistor JF

Contextual Info: ST1000EX21 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR TENTATIVE ST1000EX21 HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Unit: mm All Electric contacts by Pressure Structure and Airtight Package Anti−Parallel Fast Recovery Diode in This Package

Contextual Info: Technische Information / Technical Information Schnelle beschaltungslose Diode Fast Hard Drive Diode D 911SH 45T SH Features: • Speziell entwickelt für beschaltungslosen Betrieb • Specially designed for snubberless operation • Niedrige Verluste, weiches Ausschalten

K75T60

Abstract: 400w power supply K75T60 igbt ikw75n60
Contextual Info: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

K75T60

Contextual Info: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

K75T60

Abstract: IKW75N60T PG-TO-247-3-21 600V75A
Contextual Info: IKW75N60T q TrenchStop Series Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

k75t60

Abstract: K75T60 igbt K75T60 datasheet IKW75N60T ikw75n60 PG-TO-247-3-21 diode 10a 400v k75t6
Contextual Info: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

k75t60

Abstract: K75T60 datasheet IKW75N60T k75t6 Q67040S4719
Contextual Info: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in Trench and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C Short circuit withstand time – 5µs

Contextual Info: Data Sheet ACDC-3400 IND CAT IV Industrial True RMS Clamp Meter This CAT IV rated clamp is ideal for industrial applications and utilities that require an extra level of safety. Includes True RMS sensing for accuracy and dependability. Extra large jaw to accommodate wide diameter wires.

Contextual Info: TRENCHSTOP Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP™ and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •            Very low VCE sat 1.5V (typ.) Maximum Junction Temperature 175°C

Contextual Info: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C •            Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

Contextual Info: TRENCHSTOP Series IKW75N60T q Low Loss DuoPack : IGBT in TRENCHSTOP® and Fieldstop technology with soft, fast recovery anti-parallel Emitter Controlled HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

Contextual Info: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

Diode 400V 20A

Abstract: SKW20N60HS
Contextual Info: Preliminary Datasheet SKW20N60HS High Speed IGBT in NPT-technology C • 30% lower Eoff compared to previous generation 12 µJ/A • Short circuit withstand time – 10 µs • NPT-Technology for 600V applications offers: - parallel switching capability - very tight parameter distribution

K75T60

Abstract: K75T60 datasheet IKW75N60T 000823 ikw75n60 K75T60 igbt PG-TO-247-3 600v 75a
Contextual Info: TrenchStop Series IKW75N60T q Low Loss DuoPack : IGBT in TrenchStop® and Fieldstop technology with soft, fast recovery anti-parallel EmCon HE diode C • • • • • • • • • • • • Very low VCE sat 1.5 V (typ.) Maximum Junction Temperature 175 °C

ST T4 3560

Abstract: T2 AL 250V 150Vt GA600HD25S
Contextual Info: PD - 94341 GA600HD25S StandardTM Speed IGBT SINGLE SWITCH IGBT DOUBLE INT-A-Pak Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

IGBT DRIVE 50V 300A

Abstract: LTA 902 GA600GD25S AK 1262 igbt "internal thermistor" int-a-pak
Contextual Info: PD -50071B GA600GD25S SINGLE SWITCH IGBT DOUBLE INT-A-PAK StandardTM Speed IGBT Features • Standard speed, optimized for battery powered application • Very low conduction losses • HEXFREDTM antiparallel diodes with ultra-soft recovery • Industry standard package

fast recovery diode 1200V 100ns

Abstract: Q67040-S4281 SKW15N120
Contextual Info: Preliminary SKW15N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers: