1000IB Search Results

HMBTA13

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2002.12.27 Page No. : 1/4 HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures

PZTA14

Contextual Info: PZTA14 Darlington NPN Silicon Planar Epitaxial Transistor COLLECTOR 2, 4 P b Lead Pb -Free 4 1. BASE 2.COLLECTOR 3.EMITTER 4.COLLECTOR BASE 1 1 2 3 SOT-223 3 EMITTER ABSOLUTE MAXIMUM RATINGS (Ta=25 C) Symbol Value Unit Collector-Emitter Voltage VCEO 30 V Collector-Base Voltage

BTD1383L3

Contextual Info: Spec. No. : C214L3 Issued Date : 2005.01.20 Revised Date : Page No. : 1/4 CYStech Electronics Corp. General Purpose NPN Epitaxial Planar Transistor BTD1383L3 Description • The BTD1383L3 is a darlington amplifier transistor. Symbol Outline BTD1383L3 SOT-223

SOT23 MARKING

Abstract: HMBTA14 HMBTA64
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.

MARKING Y1 TRANSISTOR

Abstract: Y2 marking HJ2584 Y2MARKING PDTC* MARKING CODE
Contextual Info: HI-SINCERITY Spec. No. : HJ200204 Issued Date : 1998.04.08 Revised Date : 2005.07.14 Page No. : 1/4 MICROELECTRONICS CORP. HJ2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2584 is designed for use in low voltage and low drop out regulator applications.

HMBTA14

Contextual Info: HI-SINCERITY Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2004.09.01 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures

HMBTA13

Contextual Info: HI-SINCERITY Spec. No. : HE6842 Issued Date : 1994.07.29 Revised Date : 2004.09.08 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA13 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures

HE9512

Abstract: HM14 HM64 PT 10000
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE9512 Issued Date : 1996.04.17 Revised Date : 2001.09.20 Page No. : 1/3 HM64 PNP EPITAXIAL PLANAR TRANSISTOR Description The HM64 is a darlington amplifier transistor designed for applications requiring extremely high current gain.

HM27

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. :HE9517-B Issued Date : 1997.06.06 Revised Date : 2000.10.01 Page No. : 1/3 HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HJ2584

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HJ200204 Issued Date : 1998.04.08 Revised Date : 2002.02.18 Page No. : 1/3 HJ2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The HJ2584 is designed for use in low voltage and low drop out regulator applications.

HMBTA14

Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2001.06.15 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C

BTN2129T3

Abstract: 06102 d 772 transistor
Contextual Info: CYStech Electronics Corp. Spec. No. : C853T3 Issued Date : 2004.07.14 Revised Date : 2004.09.02 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129T3 Description The BTN2129T3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

transistor h2a

Abstract: diode marking H2 H2A transistor HAD825
Contextual Info: HI-SINCERITY Spec. No. : HE6406 Issued Date : 1994.01.13 Revised Date : 2005.01.25 Page No. : 1/4 MICROELECTRONICS CORP. HAD825 NPN EPITAXIAL PLANAR TRANSISTOR Features Darlington transistor. Absolute Maximum Ratings TO-92 • Maximum Temperatures Storage Temperature. -55 ~ +150 °C

Contextual Info: HI-SINCERITY Spec. No. :HE9517 Issued Date : 1997.06.06 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM27 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington transistor. SOT-89 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature . -55 ~ +150 °C

HMPSA14

Abstract: HMPSA64
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6305 Issued Date : 1992.09.09 Revised Date : 2002.02.21 Page No. : 1/4 HMPSA14 NPN SILICON TRANSISTOR Description The HMPSA14 is designed for applications requiring extremely high current gain collector current to 500mA.

H2584

Abstract: 1s 838
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6716 Issued Date : 1996.02.01 Revised Date : 2002.02.18 Page No. : 1/3 H2584 PNP EPITAXIAL PLANAR TRANSISTOR Description The H2584 is designed for use in low voltage and low dropout regulator applications.

IC 4047

Abstract: data sheet of IC 4047 IC 4047 BE ic 4047 datasheet BTN2129E3
Contextual Info: CYStech Electronics Corp. Spec. No. : C853E3 Issued Date : 2004.06.15 Revised Date : 2004.07.14 Page No. : 1/5 NPN Epitaxial Planar Transistor BTN2129E3 Description The BTN2129E3 is a NPN Darlington transistor, designed for general purpose amplifier and low speed

darlington transistor SOT-23

Abstract: HMBTA14
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6841 Issued Date : 1994.07.29 Revised Date : 2002.10.25 Page No. : 1/3 HMBTA14 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Amplifier Transistor Absolute Maximum Ratings SOT-23 • Maximum Temperatures

HMBT6427

Abstract: transistor tl
Contextual Info: HI-SINCERITY Spec. No. : HE6846 Issued Date : 1995.07.21 Revised Date : 2004.08.31 Page No. : 1/4 MICROELECTRONICS CORP. HMBT6427 NPN EPITAXIAL PLANAR TRANSISTOR Description Darlington Transistor SOT-23 Absolute Maximum Ratings • Maximum Temperatures Storage Temperature. -55 ~ +150 °C

HM14

Abstract: HM64
Contextual Info: HI-SINCERITY Spec. No. :HE5908 Issued Date : 1998.04.09 Revised Date : 2004.12.21 Page No. : 1/4 MICROELECTRONICS CORP. HM14 NPN EPITAXIAL PLANAR TRANSISTOR Description The HM14 is a darlington amplifier transistor designed for applications requiring extremely high current gain.

HMBTA14

Abstract: HMBTA64
Contextual Info: HI-SINCERITY Spec. No. : HE6807 Issued Date : 1998.08.12 Revised Date : 2004.09.07 Page No. : 1/4 MICROELECTRONICS CORP. HMBTA64 PNP SILICON TRANSISTOR Description The HMBTA64 is designed for application requiring extremely high current gain at collector current to 500mA.

100MHZ

Abstract: HMPSA14 HMPSA64
Contextual Info: HI-SINCERITY MICROELECTRONICS CORP. Spec. No. : HE6333-B Issued Date : 1992.11.18 Revised Date : 2000.10.01 Page No. : 1/4 HMPSA64 PNP SILICON TRANSISTOR Description The HMPSA64 is designed for application requiring extremely high current gain at collector currents to 500mA.

c215a

Abstract: 1902 transistor BTNA13A3 BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C215A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA13A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA63A3. Equivalent Circuit

C214A

Abstract: 1902 transistor CYStech Electronics BTNA14A3
Contextual Info: CYStech Electronics Corp. Spec. No. : C214A3 Issued Date : 2003.03.27 Revised Date : Page No. : 1/4 Gentral Purpose NPN Epitaxial Planar Transistor BTNA14A3 Description • The BTNA14A3 is a darlington amplifier transistor • Complementary to BTPA64A3. Equivalent Circuit