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    1000V, NPN 100A Search Results

    1000V, NPN 100A Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC022
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TTC020
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=80 V / IC=4 A / hFE=100~200 / VCE(sat)=0.17 V / tf=70 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    TPCP8515
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=12 V / IC=5 A / hFE=250~500 / VCE(sat)=0.14 V / tf=50 ns / PS-8 Visit Toshiba Electronic Devices & Storage Corporation
    TTC021
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=120 V / IC=3 A / hFE=120~240 / VCE(sat)=0.15 V / tf=170 ns / PW-Mini Visit Toshiba Electronic Devices & Storage Corporation
    2SC5198
    		Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / VCEO=140 V / IC=10 A / hFE=55~160 / VCE(sat)=2.0 V / TO-3P(N) Visit Toshiba Electronic Devices & Storage Corporation

    1000V, NPN 100A Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    triac mw 131 600d

    Abstract: 65n06
    Contextual Info: / 20 13 -2 01 4 Nell,your reliable green partner Europe North America China Taiwan ,Taipei Africa South America Oceania Evolving green Innovation and Future Worldwide Presence Headquarter TEL FAX E-Mail Nell semiconductor Taiwan,Taipei +886-2-26474181 +886-2-26429717


    Original     		PDF

    Diode 400V 5A

    Abstract: lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN
    Contextual Info: PRODUCT 2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 2N1482 2N1483 2N1483A 2N1484A 2N1485 2N1485A 2N1486 2N1486A 2N1613 2N1613L 2N1616 2N1617 2N1618 2N1711 2N1717 2N1721 2N1722 2N1724 2N1724A 2N1889 2N1890 2N1893 2N1893CSM 2N1893DCSM


    Original     		2C415 2C425 2C444 2C746 2N1131L 2N1132 2N1132CSM 2N1132DCSM 2N1208 2N1209 Diode 400V 5A lm1083 BZY55C transistor 2n1208 bc109 spice IRF9024 CV7404 mnt6337j sml1258 SML1004RGN PDF

    npn 1000V 100a

    Abstract: D7ST1008 1S697 D7ST100805 D7ST1010 D7ST1012 50c020
    Contextual Info: -p W Ê R Ë X DE i T S T H t i S l IN C " m tÊ B sx. v f f U I X t A A IN O y o u Æ o / ' b ü aD02b7S T | TT _- 3333-1] R 5 D7ST1008, D7ST1010, D7ST1012 Tentative Powerex, Inc., Hillls Street, Youngwood, Pennsylvania 15697 412 925-7272 NPN Power Switching


    OCR Scan     		7214t21 T-33-15 D7ST100& D7ST1010, D7ST1012 Amperes/1000 D7ST1008/1010/1012, D7ST1008/1010/1012 D7ST1012 npn 1000V 100a D7ST1008 1S697 D7ST100805 D7ST1010 50c020 PDF

    MG100M2YK1

    Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG100M2YK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=100A


    OCR Scan     		MG100M2YK1 MG100M2YK1 PDF

    MG100M2CK1

    Abstract: npn 1000V 100a 1000v, NPN 100A
    Contextual Info: MG100M2CK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 F r e e Wheeling Diodes are Built-In to 1 Package. . High DC Current G a i n : h F E = 1 0 0 M i n . (Ic=100A)


    OCR Scan     		MG100M2CK1 MG100M2CK1 npn 1000V 100a 1000v, NPN 100A PDF

    BZX85C12V

    Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
    Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes


    Original     		DO-15 DO-201AD O-220AC T0202-3 STGP3NB60HD* STGP7NB60HD* STGP3NB60HD STGP7NB60HD BZX85C12V TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E PDF

    Contextual Info: Digital Panel Meters Modular Indicator and Controller Type UDM40 Multi-input modular instrument 4-DGT LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements; selectable full scales 200µA to 5A • AC/DC voltage measurements; selectable full scales


    Original     		UDM40 200mV Pt100-250-500-1000, Ni100, 001Hz 50kHz) 20mA/10VDC RS485 RS232 UDM40 PDF

    Contextual Info: Digital Panel Meters Modular Indicator and Controller Type UDM35 • • • • • • • • • Front protection degree: IP67, NEMA12, NEMA4x "Indoor use only" • Linearization of Hz inputs up to 16 points • • • • Multi-input modular instrument 3 1/2 DGT LED


    Original     		UDM35 NEMA12, 200mV Pt100-250-500-1000, Ni100, 001Hz 50kHz) UDM35 RS485 PDF

    Digital Panel Meters

    Abstract: BQ 24 Transistor BQ HSX PT1000 CONVERSION TABLE BQ lSX pnp 1000V 2A PT500 DIN UDM35 PT250 RTD PNP 1000V 100a
    Contextual Info: Digital Panel Meters Modular Indicator and Controller Type UDM35 • • • • • • • • Multi-input modular instrument 3 1/2 DGT LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales


    Original     		UDM35 200mV Pt100-250-500-1000, Ni100, 001Hz 50kHz) 20mA/10VDC RS485 RS232 IP67nel Digital Panel Meters BQ 24 Transistor BQ HSX PT1000 CONVERSION TABLE BQ lSX pnp 1000V 2A PT500 DIN UDM35 PT250 RTD PNP 1000V 100a PDF

    Contextual Info: Digital Panel Meters Modular Indicator and Controller Type USC-DIN • • • • • • • • Multi-input modular signal’s conditioner 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements; selectable full scales


    Original     		200mV Pt100-250-500-1000, Ni100, 001Hz 50kHz) 20mA/10VDC RS485 RS232 RS232 PDF

    BQ lSX

    Abstract: BQ HSX PNP 1000V 100a transistor bq 17 UDM35 Pt100-250-500-1000 PT250 1000v, NPN 100A PT500 Resistance Table PT1000 table CONVERSION
    Contextual Info: Digital Panel Meters Modular Indicator and Controller Type UDM35 • • • • • • • • Multi-input modular instrument 3 1/2 DGT LED 0.1% RDG basic accuracy TRMS AC current and voltage measurements AC/DC current measurements: selectable full scales


    Original     		UDM35 200mV Pt100-250-500-1000, Ni100, 001Hz 50kHz) 20mA/10VDC RS485 RS232 IP675mm BQ lSX BQ HSX PNP 1000V 100a transistor bq 17 UDM35 Pt100-250-500-1000 PT250 1000v, NPN 100A PT500 Resistance Table PT1000 table CONVERSION PDF

    2SD1165

    Contextual Info: 2SD1165A SILICON NPN TRIPLE DIFFUSED MESA TYPE INDUSTRIAL APPLICATIONS Unit in ran HIGH POWER SWITCHING APPLICATION. DC-AC POWER INVERTER APPLICATION. 2 -0 4 - 0 ± 0.2 MOTOR CONTROL APPLICATION. FEATURES : . High Voltage : V c e SUS > 900v . Triple Diffused Design


    OCR Scan     		2SD1165A 500kg 2SD1165 PDF

    mg25m2yk9

    Abstract: MG25M NPN Transistor VCEO 1000V
    Contextual Info: GTR MODULE_ SILICON NPN TRIPLE DIFFUSED TYPE MG25M2YK9 HIGH POWER SWITCHING APPLICATIONS. Unit in mro MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.


    OCR Scan     		MG25M2YK9 mg25m2yk9 MG25M NPN Transistor VCEO 1000V PDF

    MG25M2CK2

    Abstract: t100a mg25m2
    Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG25M2CK2 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain


    OCR Scan     		MG25M2CK2 MG25M2CK2 t100a mg25m2 PDF

    MG150M2YK1

    Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2YK1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. 2 . Power Transistors and Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=150A


    OCR Scan     		MG150M2YK1 00A/ys MG150M2YK1 PDF

    lF-50A

    Contextual Info: MG50M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Buit-in to 1 Package. . High DC Current Gain: hpE=100 Min. (Ic=50A)


    OCR Scan     		MG50M2YK1 lF-50A PDF

    MG75M2CK1

    Abstract: tkp7
    Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain


    OCR Scan     		MG75M2CK1 MG75M2CK1 tkp7 PDF

    ic 109b

    Abstract: MG100M2YK1 Di 762 transistor transistor B 764
    Contextual Info: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling


    OCR Scan     		MG100M2YK1 -109B ic 109b MG100M2YK1 Di 762 transistor transistor B 764 PDF

    MG150M2CK1

    Abstract: CW801
    Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . Power Translators and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=150A)


    OCR Scan     		MG150M2CK1 MG150M2CK1 CW801 PDF

    U1W npn

    Abstract: NPN VCEo 1000V transistor yk
    Contextual Info: MG75M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain : hFE=100 Min. (Ic=75A)


    OCR Scan     		MG75M2YK1 U1W npn NPN VCEo 1000V transistor yk PDF

    Contextual Info: ~5b TOSHIBA O I S C R E T E / O P T O Ï 9097250 TOSHIBA D E | c10cî7ES0 □□□7fl7ñ DISCRETE/OPTO SILICON NPN TRIPLE DIFFUSED MESA TYPE _ (DARLINGTON POWER)_ 2SD1165A INDUSTRIAL APPLICATIONS Unit in nun z-^4.o±aa HIGH POWER SWITCHING APPLICATION.


    OCR Scan     		2SD1165A PDF

    MG50M2CK2

    Contextual Info: MG50M2CK2 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Ioslation from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain : hfE=100 Min. (Ic=50A)


    OCR Scan     		MG50M2CK2 MG50M2CK2 PDF

    MG200M1UK1

    Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG200M1UK1 HIGH POWER SWITCHING APPLICATIONS. M OTOR CONTROL APPLICATIONS. FEATURES: . The Collector is IsoLated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hpg=100 Min. (Ic=200A’ . Low Saturation Voltage


    OCR Scan     		MG200M1UK1 MG200M1UK1 PDF

    Contextual Info: G TR MODULE SILICON NPN TRIPLE DIFFUSED T Y P E MG200M1UK1 HIGH POWER SWITCHING APPLICATIONS. M O TOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain: hFjr=100 Min. (Ic=200A'


    OCR Scan     		MG200M1UK1 PDF