1000V 2.5A MOS Search Results

Contextual Info: STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on Max ID PTOT STF3NK100Z 1000V < 6Ω 2.5A 25W STP3NK100Z 1000V < 6Ω 2.5A 90W STD3NK100Z 1000V

D3NK100Z

Abstract: P3NK100Z D3NK JESD97 STD3NK100Z STF3NK100Z STP3NK100Z F3NK100Z
Contextual Info: STF3NK100Z - STD3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP - DPAK Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on Max ID PTOT STF3NK100Z 1000V < 6Ω 2.5A 25W STP3NK100Z 1000V < 6Ω 2.5A 90W STD3NK100Z 1000V

P3NK100Z

Abstract: F3NK100Z st 220 f1 STF3NK100Z STP3NK100Z JESD97
Contextual Info: STF3NK100Z STP3NK100Z N-channel 1000V - 5.4Ω - 2.5A - TO-220 - TO-220FP Zener-protected SuperMESH Power MOSFET Features Type VDSS RDS on ID PTOT STF3NK100Z 1000V < 6Ω 2.5A 90W STP3NK100Z 1000V < 6Ω 2.5A 25W • Extremely high dv/dt capability ■

Contextual Info: Advance Technical Information IXFP4N100PM PolarTM HiperFETTM Power MOSFET VDSS ID25 RDS on = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ

Contextual Info: Advance Technical Information PolarTM HiperFETTM Power MOSFET VDSS ID25 IXFP4N100PM RDS on = 1000V = 2.5A Ω ≤ 3.3Ω N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode OVERMOLDED Symbol Test Conditions VDSS VDGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGS = 1 MΩ

IXTN5N250

Contextual Info: Preliminary Technical Information High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 IXTN5N250 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA miniBLOC E153432 S Symbol Test Conditions G Maximum Ratings VDSS TJ = 25°C to 150°C

IXTN5N250

Abstract: 5N250 S8560 88 881 505 Vdss 2000V
Contextual Info: Preliminary Technical Information IXTN5N250 High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA miniBLOC E153432 S G Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

Contextual Info: Advance Technical Information High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 IXTK5N250 IXTX5N250 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

IXTK5N250

Abstract: 5N25 IXTX5N250 Vdss 2000V PLUS247
Contextual Info: Advance Technical Information IXTK5N250 IXTX5N250 High Voltage Power MOSFET w/ Extended FBSOA VDSS ID25 = 2500V = 5A Ω < 8.8Ω RDS on N-Channel Enhancement Mode Avalanche Rated Guaranteed FBSOA TO-264 (IXTK) Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C

1000V 25A Mosfet

Abstract: MTM5N100
Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com CASE OUTLINE: TYPE: MTM5N100 TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

IRFPG42

Abstract: IRFPG40
Contextual Info: IRFPG40, IRFPG42 S E M I C O N D U C T O R 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • IRFPG40: 4.3A, 1000V, rDS ON = 3.5Ω These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: IRFPG40, IRFPG42 fÇ j HARRIS S E M I C O N D U C T O R 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Features Description • IRFPG40: 4.3A, 1000V, rDS 0 N = 3 .5 0 These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRFAG40

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: AOK5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOK5N100 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss and Crss along

Contextual Info: OM9027SP1 OM9029SP1 OM9Q28SP1 QM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 10 0 V T h r u 1000V. 4A To 3 0 A P o w e r M O S F E T A n d High S p e e d R ect ifi er In O n e P a c k a g e FEATURES • • • • • M OSFET And Common Cathode Rectifier In One Package

Contextual Info: S IRFPG40, IRFPG42 S e m ico n d ucto r y 4.3A and 3.9A, 1000V, 3.5 and 4.2 Ohm, N-Channel Power MOSFETs January 1998 Description Features • IRFPG40: 4.3A, 1000V, r D S O N = These are N-Channel enhancem ent mode silicon gate power field effect transistors. They are advanced power

MOSFET 1000v 30a

Abstract: 10A, 100v fast recovery diode OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 diode 1000V 10a
Contextual Info: OM9027SP1 OM9029SP1 OM9028SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • MOSFET And Common Cathode Rectifier In One Package

Contextual Info: AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss

Contextual Info: AOT5N100/AOTF5N100 1000V,4A N-Channel MOSFET General Description Product Summary The AOT5N100 & AOTF5N100 are fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications.By providing low RDS on , Ciss

Contextual Info: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The

smd diode 39a

Abstract: mosfet 10a 800v IRFNG40 mosfet 10a 800v high power smd+diode+39a
Contextual Info: PD - 91555A POWER MOSFET SURFACE MOUNT SMD-1 IRFNG40 1000V, N-CHANNEL HEXFET MOSFET TECHNOLOGY Product Summary Part Number IRFNG40 R DS(on) ID 3.5Ω 3.9A HEXFET® MOSFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The