1000V 3A DIODE Search Results

RECTIFIER DIODE 1000A schottky

Contextual Info: Gì SGS-IHOMSON m DTV32-1000A MTV32-600A CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES For complete specifications refer to "SCHOTTKY RECTIFIER DIODES" MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 IF peak 3A VRRM trr 600V 3A 1000V 50ns 1.6V

IC 7805

Abstract: 7812 voltage regulator 5A REGULATOR IC 7805 REGULATOR IC 7824 1n1001 6a smd transistor REGULATOR IC 7905 7824 5A REGULATOR IC 7812 7812 7912
Contextual Info: I WAY-TECH 33E D E N T E R P R I S E CO 'T'-dB»-’h Tb31flHE O O O O O O l *\ —nfemmm sBM&m > SILICON REGULAR RECTIFIERS FAST RECOVERY RECTIFIERS 1N4001 - 1N4007 1A, 50V-1000V 1N5391 - 1N5399 (1.5A, 50V-1000V) 1N5400 - 1N5408 (3A, 50V-1000V) S6A05 - S6A10 (BA, 50V-1000V)

D027A

Abstract: DIODE 1000a diode 628 1000A diode DTV32-1000A 1000v 3a diode 113 DTV32 MTV32-600A mtv32 switching DIODE 1000A
Contextual Info: DTV32-1000A MTV32-600A / ^ 7 SGS-THOMSON CRT HORIZONTAL DEFLECTION HIGH VOLTAGE DAMPER & MODULATION DIODES MAIN PRODUCTS CHARACTERISTICS MTV32 DTV32 If peak 3A 3A Vr r m 600V 1000V trr 50ns 70ns Vf 1.6V 1.6V FEATURES • PRODUCTS SPECIFIC TO HORIZONTAL DE­

MOSFET 800V 3A

Abstract: DC/AC to DC smps circuit diagram STP3NB100 SWITCHING WELDING SCHEMATIC BY MOSFET STP3NB100FP
Contextual Info: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V < 6Ω 3A STP3NB100FP 1000 V < 6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY

STP3NB100

Abstract: STP3NB100FP
Contextual Info: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY

STP3NB100FP

Abstract: STP3NB100
Contextual Info: STP3NB100 STP3NB100FP N-CHANNEL 1000V - 5.3Ω - 3A TO-220/TO-220FP PowerMesh MOSFET PRELIMINARY DATA TYPE VDSS RDS on ID STP3NB100 1000 V <6Ω 3A STP3NB100FP 1000 V <6Ω 3A • ■ ■ ■ ■ TYPICAL RDS(on) = 5.3Ω EXTREMELY HIGH dv/dt CAPABILITY

GF30DL

Abstract: GF30GL GF30JL GF30KL GF30ML
Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

GF30D

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DL THRU GF30ML VF < 0.91V @IF = 3A FEATURES Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Compliance to RoHS product GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

Contextual Info: ZOWIE Super Low VF Rectifier Diode 200V~1000V / 3.0A GF30DLH THRU GF30MLH VF < 0.91V @IF = 3A FEATURES Halogen-free type Lead free product, compliance to RoHS GPRC (glass passivated rectifier chip) inside Glass passivated cavity-free junction Ideal for surface mount automotive applications

T3N100

Abstract: IXTA3N100D2 3n100 ixta3n100 IXTP3N100D2
Contextual Info: Preliminary Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM

Contextual Info: Advance Technical Information IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFET VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) G Symbol Test Conditions Maximum Ratings VDSX TJ = 25°C to 150°C 1000 V VDGX TJ = 25°C to 150°C, RGS = 1MΩ

Contextual Info: VDSX ID on IXTA3N100D2 IXTP3N100D2 Depletion Mode MOSFETs RDS(on) = > ≤ 1000V 3A 6Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125

IXTA3N100D2

Contextual Info: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 6Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125

RF1S4N100SM

Abstract: RFP4N100 TB334
Contextual Info: RFP4N100, RF1S4N100SM Data Sheet Title FP4 00, P4 00S bt 3A, 00V, 00 m, gh lte, Cha el wer OST utho eyrds ter- August 1999 4.3A, 1000V, 3.500 Ohm, High Voltage, N-Channel Power MOSFETs Features The RFP4N100 and RFP4N100SM are N-Channel enhancement mode silicon gate power field effect

T3N100

Abstract: IXTA3N100D2 82709 IXTP3N100D2 3N100D2 T3N1 IXTP3N100
Contextual Info: Depletion Mode MOSFETs IXTA3N100D2 IXTP3N100D2 VDSX ID on RDS(on) = > ≤ 1000V 3A 5.5Ω Ω N-Channel TO-263 AA (IXTA) Symbol Test Conditions VDSX TJ = 25°C to 150°C VGSX G Maximum Ratings S 1000 V Continuous ±20 V VGSM Transient ±30 V PD TC = 25°C 125

D3UB100

Contextual Info: D3UB05 THRU D3UB100 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 3A D3K VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

Contextual Info: KBP3005 THRU KBP310 桥式整流器 Bridge Rectifier •特征 Features ● Io ■外形尺寸和印记 Outline Dimensions and Mark 3A KBP VRRM 50V~1000V ● 玻璃钝化芯片 Glass passivated chip ● 耐正向浪涌电流能力高 High surge forward current capability

10086B

Contextual Info: • R W .\A ADVANCED A P T 10086B V F R pow er Te c h n o l o g y “ 1000v POWER MOS V i 3a 0.860Q FREDFET Power MOS V is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: • R A dvanced W .\A APT10086B VR pow er Te c h n o lo g y " 1000v i 3a 0.860Q POWER MOS V Pow er M OS V is a new generation of high voltage N -C hannel enhancem ent m ode pow er M O SFE Ts. This new tech no lo gy m inim izes the JFE T effect, increases packing density and reduces the on-resistance. Pow er M OS V®

SR506 Diode

Abstract: diode 6A 1000v SM4007 Diode Diode SR360 diode her307
Contextual Info: Room I, Floor 4, 13 Yip Fung Street, Hong Kong Tel: +86 769 8118 8110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Rectifier List Diode Rectifier Diode Rectifier M7 SMD4001-4007 Diode SR560 (5A 60V) Bulk RoHS. DO-27 S1A -S1M Diode UF4004 (1А 400V) Bulk RoHS. DO-41

2510W

Abstract: RS1M diode
Contextual Info: Email: info@kingtronics.com Web: www.kingtronics.com Tel: +86 769 81188110 or +852 8106 7033 Fax: +852 8106 7099 Kingtronics Diode & Bridge Rectifier List UL ISO Manufacturer since 1990 Diode Recitifer M7 DO-214AC (1A 1000V)SMA Bridge Rectifier ABS2-ABS6; ABS8; ABS10

QCA150AA100

Abstract: QCA150AA120 24TRANSISTOR E76102
Contextual Info: TRANSISTOR MODULE QCA150AA100 UL;E76102 M QCA150AA100 is a dual Darlington power transistor module which has seriesconnected high speed, high power Darlington transistors. Each transistor has a reverse paralleled fast recovery diode. The mounting base of the module is electrically isolated

diode mur

Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Contextual Info: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.