1001XXXX Search Results

w19b320

Contextual Info: W19B320AT/B Data Sheet 4M x 8/2M × 16 BITS 3V FLEXIBLE BANK FLASH MEMORY Table of Contents1. GENERAL DESCRIPTION . 4 2. FEATURES . 4

GL032A

Abstract: S71GL032A S71GL032
Contextual Info: S71GL032A Based MCPs Stacked Multi-Chip Product MCP Flash Memory and RAM 32 Megabit (2 M x 16-bit) CMOS 3.0 Volt-only Page Mode Flash Memory and 16/8/4 Megabit (1M/512K/256K x 16-bit) Pseudo Static RAM Data Sheet ADVANCE INFORMATION Notice to Readers: The Advance Information status indicates that this

Contextual Info: Freescale Semiconductor Product Preview Xtrinsic Battery Sensor The MM9Z1_638 is a fully integrated Battery monitoring device. The device supports precise current measurement via an external shunt resistor. It features four voltage measurement via an internal calibrated resistor divider or use of an external

L323C

Contextual Info: ADVANCE INFORMATION AMDZ1 Am29DL32xC 32 Megabit 4 M x 8 -Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Sim ultaneous Operation Flash Mem ory DISTINCTIVE CHARACTERISTICS ARCHITECTURAL ADVANTAGES • Simultaneous Read/Write operations — Data can be continuously read from one bank w hile

DL322

Abstract: DL323 DL324
Contextual Info: PRELIMINARY Am41DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features

CA 324G

Abstract: DL322 DL323 DL324
Contextual Info: PRELIMINARY Am42DL32x4G Stacked Multi-Chip Package MCP Flash Memory and SRAM 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS MCP Features SOFTWARE FEATURES

A29L320ATV-70F

Abstract: 48pin flash programmer circuit 48pin TSOP A29L320ATV A29L320AUV-70UF A29L320ATV-70UF A29L320AUG-70F A29L320A
Contextual Info: A29L320A Series 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Document Title 4M X 8 Bit / 2M X 16 Bit CMOS 3.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue April 12, 2006

AMD marking CODE flash AM29DL323DB

Abstract: AM29DL32XD 56-Pin S29JL032 DL322 DL323 DL324 S29JL032H S29PL032J
Contextual Info: Am29DL322D/323D/324D Data Sheet This product has been retired and is not available for designs. For new and current designs involving TSOP packages, S29JL032H supersedes Am29DL32xD and is the factory-recommended migration path. Please refer to the S29JL032H Datasheet for specifications and ordering information.

siemens ts 4140

Abstract: slma PEB2040 TS01S HSCC "digital switching system" TI344
Contextual Info: SIEMENS Memory Time Switch CMOS MTSC PEB 2045 PEF 2045 Preliminary Data 1 CMOS IC Features • Time/space switch for 2048-, 4096- or 8192-kbit/s PCM systems • Switching of up to 512 incoming PCM channels to up to 256 outgoing PCM channels • 16-input and 8-output PCM lines

Contextual Info: 19-2331; Rev 1; 9/03 3V/5V, 10-Bit, Serial Voltage-Output Dual DACs with Internal Reference The MAX5232/MAX5233 low-power, dual 10-bit voltageoutput digital-to-analog converters DACs feature an internal 10ppm/°C precision bandgap voltage reference and precision output amplifiers. The MAX5233 operates

NL1031

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿ P D 4 8 8 3 0 L 8M-BIT Rambus DRAM 1M-WORD X 8-BIT X 1-BANK Description The 8-Megabit Ram bus DRAM RD R A M ™ is an extremely-high-speed C M O S DRAM organized as 1M w ords by 8 bits and capable of bursting up to 256 bytes of data at 2 ns per byte. The use of Ram bus Signaling

Contextual Info: PRELIMINARY DATA SHEET MOS INTEGRATED CIRCUIT /¿PD488170L 18M-BIT Rambus DRAM 1M-WORD X 9-BIT X 2-BANK Description The 18-Megabit Rambus DRAM RDRAM™ is an extrem ely-high-speed CMOS DRAM organized as 2M w o rds by 9 bits and capable o f bursting up to 256 bytes of data at 2 ns per byte. The use o f Rambus S ignaling

asme SA388

Abstract: gl128m A2113 S29GL256 E78000 S29GL128N TSOP56 S29GL128N sa32sa35 S29GLxxxM BGA-63
Contextual Info: S29GL-M MirrorBitTM フラッシュファミリ S29GL256M，S29GL128M，S29GL064M，S29GL032M 256M ビット，128M ビット，64M ビット，および 32M ビット， 3.0V 単一電源，ページモードフラッシュメモリ 0.23µm MirrorBit プロセステクノロジ

DS42553

Contextual Info: DS42553 Stacked Multi-Chip Package MCP Flash Memory and SRAM Am29DL323D Top Boot 32 Megabit (4 M x 8-Bit/2 M x 16-Bit) CMOS 3.0 Volt-only, Simultaneous Operation Flash Memory and 4 Mbit (512 K x 8-Bit/ 256 K x 16-Bit) Static RAM DISTINCTIVE CHARACTERISTICS

DL322

Abstract: DL323 DL324
Contextual Info: Am49DL32xBG Data Sheet July 2003 The following document specifies Spansion memory products that are now offered by both Advanced Micro Devices and Fujitsu. Although the document is marked with the name of the company that originally developed the specification, these products will be offered to customers of both AMD and

E1210

Abstract: JT-G704 JT-G703 JT-G706 MT9072 MT9072AB MT9072AV PUB43801 PCM24 Y230
Contextual Info: MT9072 Octal T1/E1/J1 Framer Data Sheet Features • • • • • • • October 2004 Eight fully independent, T1/E1/J1 framers 3.3 V supply with 5 V tolerant inputs Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling Framing Modes:

FT609

Abstract: controlling of automatic stepper motor bipolar l293 194 stepper controller EdeFT609 Stepping L293 and unipolar stepper motor Stepping Motors diagram 6 pin unipolar stepper motor 5V unipolar STEPPER MOTOR TRANSISTOR DRIVER
Contextual Info: EdeFT609 Preliminary Datasheet General Description: The FT609 provides a new simple way of controlling Stepper Motors. Stepper motors have traditionally been favored because of their exact positioning characteristics, but the electronics required to drive them has always been

Q67100-H6298

Abstract: ITS40
Contextual Info: ICs for Communications Multipoint Switching and Conferencing Unit - Attenuation MUSAC-A PEB 2445 Version 1.2 Data Sheet 02.96 PEB 2445 Revision History: Current Version: 02.96 Previous Version: Digital Switching and Conferencing IC’s Data Book 01.94 Page

TRF960

Abstract: N1001 BSN6030 TRF9600 bsn6040 BSN6020 TRF96001
Contextual Info: TRF96001 2.4ĆGHz RF TRANSCEIVER SWRS007 – AUGUST 2001 GQE PACKAGE Features D Integrated 2.4-GHz Frequency Hopping D D D D D D D D D Spread Spectrum FHSS RF Transceiver TX Amplifier With Gain Control and Ramping Single Digital Line Interface In-Phase/

UPD6252

Abstract: u10121E IC-3411 thermistor SCK 054 uPD780001 uPD78002 PD780024 PD78002Y upd78f0924 PD78014
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: MT9072 Octal T1/E1/J1 Framer Advance Information DS5063 Features • • Eight fully independent, T1/E1/J1 framers 3.3V supply with 5V tolerant inputs • Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling • • Framing Modes:

Contextual Info: MT9072 Octal T1/E1/J1 Framer Advance Information Features • • • • • • • DS5063 Eight fully independent, T1/E1/J1 framers 3.3V supply with 5V tolerant inputs Selectable 2.048 Mbit/s or 8.192 Mbit/s serial buses for both data and signaling Framing Modes:

K8P3215UQB

Abstract: K8P2815 K8p3215 K8P3215U k8p2815u K8P32 48FBGA samsung nor flash Samsung MCP K8P6415
Contextual Info: K8P3215UQB FLASH MEMORY 32Mb B-die Page NOR Specification INFORMATION IN THIS DOCUMENT IS PROVIDED IN RELATION TO SAMSUNG PRODUCTS, AND IS SUBJECT TO CHANGE WITHOUT NOTICE. NOTHING IN THIS DOCUMENT SHALL BE CONSTRUED AS GRANTING ANY LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE,

Contextual Info: S29JL032H 32 Megabit 4 M x 8-Bit/2 M x 16-Bit CMOS 3.0 Volt-only, Simultaneous Read/Write Flash Memory S29JL032H Cover Sheet Data Sheet Notice to Readers: This document states the current technical specifications regarding the Spansion product(s) described herein. Each product described herein may be designated as Advance Information,