100A 1000V MOSFET Search Results

100A 1000V mosfet

Contextual Info: APTMC170AM30CT1AG VDSS = 1700V RDSon = 30mΩ max @ Tj = 25°C ID = 106A @ Tc = 25°C Phase leg SiC MOSFET Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control Features • SiC Power MOSFET

Contextual Info: APTM100U13S Single switch Series & parallel diodes MOSFET Power Module VDSS = 1000V RDSon = 130m max @ Tj = 25°C ID = 65A @ Tc = 25°C Application • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features • • • Power MOS V MOSFETs

Contextual Info: APT10030L2VFR 1000V 33A 0.300Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT10030L2VFR

Abstract: DSA003668
Contextual Info: APT10030L2VFR 1000V 33A 0.300Ω POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10030L2VFR 1000V 0.300Ω 33A POWER MOS V FREDFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

RHRG50100

Abstract: RHRG5070 RHRG5080 RHRG5090
Contextual Info: RHRG5070, RHRG5080, RHRG5090, RHRG50100 S E M I C O N D U C T O R 50A, 700V - 1000V Hyperfast Diodes April 1995 Features Package • Hyperfast with Soft Recovery . . . . . . . . . . . . . . . . <75ns JEDEC STYLE TO-247 o ANODE • Operating Temperature . . . . . . . . . . . . . . . . . . . . +175 C

APTM100U13S

Contextual Info: APTM100U13S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 1000V RDSon = 130mΩ typ @ Tj = 25°C ID = 65A @ Tc = 25°C Application CR1 D S • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features

Contextual Info: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

100A 1000V mosfet

Abstract: mosfet vgs 5v mosfet 10a 800v N CHANNEL MOSFET 10A 1000V MOSFET 800V 10A POWER MOSFET Rise Time 1000V NS MOSFET 20V 100A 100A 1000V power mosfet 100A Mosfet MOSFET IGSS 100A
Contextual Info: MOSFET MODULE SF100CB100 UL;E76102 M SF100CB100 is a isolated power MOSFET module designed for fast swiching applications of high voltage and current. The mounting base of the module is electrically isolated from semiconductor elements for simple heatsink construction.

Contextual Info: APT1001RBVFR APT1001RSVFR 1000V 1.00Ω 11A BVFR POWER MOS V FREDFET D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

APT1001RBVFR

Abstract: APT1001RSVFR
Contextual Info: APT1001RBVFR APT1001RSVFR 1000V POWER MOS V FREDFET 11A 1.00Ω BVFR D3PAK TO-247 Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: J W S RHRG5070, RHRG5080, RHRG5090, RHRG50100 Semiconductor April 1995 File Number 3106.2 50A, 700V- 1000V Hyperfast Diodes Features RHRG5070, RHRG5080, RHRG5090 and RHRG50100 TA49066 are hyperfast diodes with soft recovery character­ istics (tRR < 75ns). They have half the recovery time of

Contextual Info: APTM100DAM90G Boost chopper MOSFET Power Module VBUS VDSS = 1000V RDSon = 90mΩ typ @ Tj = 25°C ID = 78A @ Tc = 25°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction CR1 OUT Features • Power MOS 7 MOSFETs

Contextual Info: APTM100SKM90G Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies VBUS Q1 G1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APT0502

Abstract: APT0601 APTM100SKM90G
Contextual Info: APTM100SKM90G Buck chopper MOSFET Power Module Application • AC and DC motor control • Switched Mode Power Supplies VBUS Q1 G1 Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

IRFAG40

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD -90575 IRFAG40 1000V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRFAG40 BVDSS 1000V RDS(on) 3.5Ω ID 3.9Α  The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

APT10030L2VR

Abstract: DSA003669
Contextual Info: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10030L2VR 0.300Ω 1000V 33A POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

Contextual Info: APT10030L2VR 1000V 33A 0.300Ω POWER MOS V MOSFET TO-264 Max Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

100A 1000V mosfet

Contextual Info: APTM100U13S Single switch Series & parallel diodes MOSFET Power Module SK VDSS = 1000V RDSon = 130mΩ max @ Tj = 25°C ID = 65A @ Tc = 25°C Application CR1 D S • • • Motor control Switched Mode Power Supplies Uninterruptible Power Supplies Features

APTM100SKM90

Contextual Info: APTM100SKM90 Q1 G1 OUT S1 CR2 0/VBUS G1 VBUS 0/VBUS OUT S1 Application • AC and DC motor control • Switched Mode Power Supplies Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Avalanche energy rated

APTM100DAM90

Contextual Info: APTM100DAM90 CR1 OUT Q2 G2 S2 0/VBUS VBUS 0/VBUS OUT S2 G2 Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Power MOS 7 MOSFETs - Low RDSon - Low input and Miller capacitance - Low gate charge

RURG30100

Abstract: RURG3070 RURG3080 RURG3090
Contextual Info: S E M I C O N D U C T O R RURG3070, RURG3080, RURG3090, RURG30100 30A, 700V - 1000V Ultrafast Diodes April 1995 Features Package • Ultrafast with Soft Recovery . . . . . . . . . . . . . . . . . . . . . <110ns JEDEC STYLE 2 LEAD TO-247 ANODE o • Operating Temperature . . . . . . . . . . . . . . . . . . . . . . . . .+175 C