100A BIPOLAR TRANSISTOR Search Results

circuit diagram induction heating

Abstract: QID3310001
Contextual Info: W M EREX QID3310001 soW HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE QID3310001 • IC . 100A • VCES . 3300V

circuit diagram induction heating

Abstract: QID3310002 induction heating circuit diagram
Contextual Info: m W EREX QID3310002 « • ‘ SS*# SOT«'6 HVIGBT High Voltage Insulated Gate Bipolar Transistor Modules HIGH POWER SWITCHING USE INSULATED TYPE QID 3310002 • • • • VCES . 3300V

Z7 DIODE

Abstract: Diode RJ 4B KT234510 bipolar power transistor vce 600 volt 100a bipolar transistor 300 volt 5 ampere transistor
Contextual Info: POÜJEREX INC m *lñ tm w D E |7H 'ì4 b a i K DGD2D3H D | r " - 2 > 3 '2 .'J KT234510 Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412)925-7272 S p l Í t mD U 3 ¡ B í p O l S t Transistor Module 100 Am peres/600 Volts Description Powerex Split-Dual Bipolar Transistor

LC100A

Contextual Info: POQJEREX INC O W Tfl E R E DE | TEIMbai 00D2Q3S □ | - T - 2 ,3 ' ¿7 KT234510 X Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412) 925-7272 S p H t-D U S l B ip O lS t Transistor Module 100 Amperes/600 Volts Description Powerex Split-Dual Bipolar Transistor

T0160NB45A

Contextual Info: Date:- 15 Feb, 2013 Data Sheet Issue:- 1 Insulated Gate Bi-Polar Transistor Type T0160NB45A Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate. 2800

IGBT 2000V .50A

Abstract: t0160na
Contextual Info: Date:- 5 Nov, 2003 Provisional Data  Data Sheet Issue:- 4 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0160NA52A MAXIMUM LIMITS UNITS Collector – emitter voltage 5200 V VDC link Permanent DC voltage for 100 FIT failure rate.

T0160NA45A

Abstract: T016 D-68623 IGBT 2000V .50A
Contextual Info: Date:- 24 Aug, 2004 Provisional Data  Data Sheet Issue:- 1 Absolute Maximum Ratings VOLTAGE RATINGS   Insulated Gate Bi-Polar Transistor Type T0160NA45A MAXIMUM LIMITS UNITS Collector – emitter voltage 4500 V VDC link Permanent DC voltage for 100 FIT failure rate.

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100NA60UP

Abstract: ultrafast igbt information OF ic 7400
Contextual Info: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA200SA60SP

Contextual Info: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

Contextual Info: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

TRANSISTOR TC 100

Abstract: GA100NA60UP ga100na60 bipolar transistor td tr ts tf 6000uf
Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

CGC SWITCH

Abstract: 600v 400a IGBT driver ga200sa60 GA200SA60SP
Contextual Info: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

TX033

Abstract: westcode igbt
Contextual Info: WESTCODE Date:- 3 Jan, 2003 Data Sheet Issue:- 2 An IXYS Company Provisional data Insulated Gate Bi-Polar Transistor Type T1500TA25B Development Type Number: TX033TA25B Absolute Maximum Ratings VOLTAGE RATINGS MAXIMUM LIMITS UNITS VCES Collector – emitter voltage

ga200sa60up

Contextual Info: Bulletin I27236 07/06 GA200SA60UP Ultra-FastTM Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • UltraFast: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

IGBT cross-reference

Abstract: AN9006 IGBT application note IGBT Pspice SGR20N40LTF
Contextual Info: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

L9R1

Contextual Info: SD1490 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION ■ DIFFUSED EMITTER BALLAST RESISTORS

IGBT cross-reference

Abstract: TO252-DPAK transistors cross reference list
Contextual Info: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

Contextual Info: IGBT FGS15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with trench gate structure have superior performance in conductance and switching to planar gate structure and also have wide noise immunity. These devices are well suitable for

AN9006

Contextual Info: IGBT SGR20N40L / SGU20N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

sd1490

Abstract: transistor bs 140
Contextual Info: SD1490 RF POWER BIPOLAR TRANSISTORS TV/LINEAR APPLICATIONS FEATURES SUMMARY • 470 - 860 MHz Figure 1. Package ■ 28 VOLTS ■ CLASS A PUSH PULL ■ DESIGNED FOR HIGH POWER LINEAR OPERATION ■ HIGH SATURATED POWER CAPABILITY ■ GOLD METALLIZATION ■ DIFFUSED EMITTER BALLAST RESISTORS

Contextual Info: SGR15N40L / SGU15N40L General Description Features Insulated Gate Bipolar Transistors IGBTs with a trench gate structure provide superior conduction and switching performance in comparison with transistors having a planar gate structure. They also have wide noise immunity. These

transistor TT 3043

Abstract: tt 3043 al 336 D67FP5 IC TT 3043 d67fp6 aj204 D67FP D67FP7 638ak
Contextual Info: HIGH SPEED NPN POWER DARLINGTON TRANSISTORS D67FP5,6,7 500-700 VOLTS 100 AMP, 312.5 WATTS The D67FP is a high voltage NPN high current power darlington especially designed for use in PWM applications where fast and efficient switching is required. This device