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    100A GTO Search Results

    100A GTO Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    10108777-12100ALF
    		Amphenol Communications Solutions PCI Express® GEN 3 Card Edge, Storage and Server Connector, Vertical, Through Hole, x1, 36 Positions, 1.00mm (0.039in) Pitch Visit Amphenol Communications Solutions
    HM2S02PE5100ABLF
    		Amphenol Communications Solutions Back Plane Connectors,2mm Hard Metric Series,Millipacs, Straight Receptacle ,Type B ,Press Fit Tail,125 Signal Pin,Unshielded,Telecordia UE with increased protection against fretting corrosion and ROHS Compliant Visit Amphenol Communications Solutions
    10129475-0100APLF
    		Amphenol Communications Solutions USB 2.0, Input Output Connectors, Single Deck Receptacle, Type A, Through Hole, Right Angle, 4 Positions. Visit Amphenol Communications Solutions
    62684-452100ALF
    		Amphenol Communications Solutions 0.50mm Flex Connector, OPU Series, 45 Position , Side Entry, Upper Side Contact, Surface Mount, ZIF Visit Amphenol Communications Solutions
    62684-342100ALF
    		Amphenol Communications Solutions 0.50mm Flex Connector, OPU Series, 34 Position , Side Entry, Upper Side Contact, Surface Mount, ZIF Visit Amphenol Communications Solutions

    100A GTO Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    D2103

    Abstract: D2101 D1300 S3900SF 1N285 S3900MF D1201P 1N5213 1N538 S3901S
    Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550


    OCR Scan     		220AB S3902DF S3900E S3901M S3903MF S3900MF S3901MF S3900S S3901S S3900SF D2103 D2101 D1300 S3900SF 1N285 D1201P 1N5213 1N538 S3901S PDF

    S3901S

    Abstract: D1201P 1N538 150a gto 1N539 S3900E 1N5214 S3900S S3900SF S3901M
    Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550


    OCR Scan     		220AB S3902DF S3900E S3901M S3903MF S3900MF S3901MF S3900S S3901S S3900SF S3901S D1201P 1N538 150a gto 1N539 S3900E 1N5214 S3900SF S3901M PDF

    rca thyristor

    Abstract: 40A GTO thyristor 1N5216 gto 100A 1N5213 1N3563 D1300A 50A GTO thyristor S3900MF 1N5217
    Contextual Info: 1TR Product M atrix GTO Product M atrix For H o rizontal-D eflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500


    OCR Scan     		220AB S3902DF S3900E S3901M S3903MF S3900MF S3901MF S3900S S3901S S3900SF rca thyristor 40A GTO thyristor 1N5216 gto 100A 1N5213 1N3563 D1300A 50A GTO thyristor 1N5217 PDF

    1N5216

    Abstract: D1300A 1N5212 d1201p 1N5213 1N5211 1N539 S3900E 1N5217 S3900S
    Contextual Info: 1TR Product M atrix GTO Product M atrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550


    OCR Scan     		220AB S3902DF S3900E S3901M S3903MF S3900MF S3901MF S3900S S3901S S3900SF 1N5216 D1300A 1N5212 d1201p 1N5213 1N5211 1N539 S3900E 1N5217 PDF

    1n5399 equivalent

    Abstract: scr rca 40A GTO thyristor rca thyristor D2101 G5001A SCR GTO 1N2862 D3202 S3901S
    Contextual Info: 1TR Product Matrix GTO Product Matrix For H o rizontal-D eflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW A TT Com m utating Retrace 8A 'T(RM S) 'TSM (60 Hz) 'T(D C ) 'TSM <60 Hz) Com m utating (Retrace) 8A 100A Trace 8A 100A 100A 400 450 500 550


    OCR Scan     		220AB S3902DF S3900E S3901M S3903MF S3900MF S3901MF S3900S S3901S S3900SF 1n5399 equivalent scr rca 40A GTO thyristor rca thyristor D2101 G5001A SCR GTO 1N2862 D3202 S3901S PDF

    URU100120

    Abstract: RURU100120 URU100
    Contextual Info: RURU100120 Data Sheet January 2002 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		RURU100120 RURU100120 125ns) 125ns 175oC URU100120 URU100 PDF

    fdb075n15a

    Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has


    Original     		FDP075N15A F102/FDB075N15A FDB075N15A FDB075N15A PDF

    MOSFET 50V 100A TO-220

    Abstract: MOSFET 50V 100A FDP045N10A FDI045N10A
    Contextual Info: FDP045N10A_F102 / FDI045N10A_F102 N-Channel PowerTrench MOSFET 100V, 164A, 4.5mΩ Features Description • RDS on = 3.8mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advance PowerTrench process that has been


    Original     		FDP045N10A FDI045N10A MOSFET 50V 100A TO-220 MOSFET 50V 100A PDF

    RURU10060

    Contextual Info: RURU10060 Data Sheet January 2002 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		RURU10060 RURU10060 175oC PDF

    FDB075N15A

    Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP075N15A F102/FDB075N15A FDB075N15A FDB075N15A PDF

    Contextual Info: FDP030N06B_F102 N-Channel PowerTrench MOSFET 60V, 195A, 3.1mΩ Features Description • RDS on = 2.67mΩ ( Typ.) @ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original     		PDF

    RURU100120

    Abstract: URU100120
    Contextual Info: RURU100120 Data Sheet January 2000 File Number 3545.3 100A, 1200V Ultrafast Diode Features The RURU100120 is an ultrafast diode with soft recovery characteristics trr < 125ns . It has low forward voltage drop and is silicon nitride passivated ion-implanted epitaxial


    Original     		RURU100120 RURU100120 125ns) 125ns URU100120 PDF

    ISD 100

    Abstract: FDP075N15A
    Contextual Info: FDP075N15A_F102 / FDB075N15A N-Channel PowerTrench MOSFET 150V, 130A, 7.5mΩ Features Description • RDS on = 6.25mΩ ( Typ.)@ VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench process that has been


    Original     		FDP075N15A F102/FDB075N15A FDB075N15A ISD 100 PDF

    RURU10060

    Contextual Info: RURU10060 Data Sheet January 2000 File Number 3546.3 100A, 600V Ultrafast Diode Features The RURU10060 is an ultrafast diode with soft recovery characteristics trr < 80ns . It has low forward voltage drop and is of silicon nitride passivated ion-implanted epitaxial


    Original     		RURU10060 RURU10060 PDF

    FDP020N06

    Abstract: micro solar inverters Mosfet application note fairchild FDP020N06B 48V kW battery charger
    Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original     		PDF

    Contextual Info: FDP020N06B_F102 N-Channel PowerTrench MOSFET 60V, 313A, 2m Features Description • RDS on = 1.65m ( Typ.) at VGS = 10V, ID = 100A This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process that has been tailored


    Original     		PDF

    Contextual Info: UniFETTM FDL100N50F N-Channel MOSFET,FRFET 500V, 100A, 0.055Ω Features Description • RDS on = 0.043Ω ( Typ.)@ VGS = 10V, ID = 50A These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.


    Original     		FDL100N50F 238nC) PDF

    Contextual Info: FDMS86550 N-Channel PowerTrench MOSFET 60 V, 100A, 1.65 mΩ Features General Description This N-Channel MOSFET is produced using Fairchild Semiconductor‘s advanced Power Trench® process that has been especially tailored to minimize the on-state resistance and


    Original     		FDMS86550 PDF

    RHR100120

    Abstract: RHRU100120
    Contextual Info: RHRU100120 Data Sheet January 2002 100A, 1200V Hyperfast Diode Features The RHRU100120 is a hyperfast diode with soft recovery characteristics trr < 90ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		RHRU100120 RHRU100120 175oC RHR100120 PDF

    RHRU10060

    Contextual Info: RHRU10060 Data Sheet January 2002 100A, 600V Hyperfast Diode Features The RHRU10060 is a hyperfast diode with soft recovery characteristics trr < 50ns . It has half the recovery time of ultrafast diodes and is of silicon nitride passivated ion-implanted epitaxial planar construction.


    Original     		RHRU10060 RHRU10060 175oC PDF

    S3901S

    Abstract: S3900SF S3900MF rca thyristor scr 50a to 65 S3903MF 1N3194 SCR 50A S3900S S3901MF
    Contextual Info: 1TR Product Matrix GTO Product Matrix For Horizontal-Deflectîon Circuits TO-22ÛAB P <3 RCA ITR's * TO 3 VERSAW ATT Commutating Retrace 8A 100A 'T (R M S) 'TSM (60 Hz) 400 450 500 550 600 650 700 750 ig t M RCA GTO's 45 4 S3900MF S3900S S3900SF 30 4 ^ a)


    OCR Scan     		220AB S3902DF S3900E S3901M S3903MF S3900MF S3901MF S3900S S3901S S3900SF S3901S S3900SF rca thyristor scr 50a to 65 1N3194 SCR 50A S3901MF PDF

    Contextual Info: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids


    Original     		FDA8440 345nC 145oC) PDF

    FDA8440

    Abstract: alternator diode 80a
    Contextual Info: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids


    Original     		FDA8440 345nC FDA8440 alternator diode 80a PDF

    FDA8440

    Contextual Info: FDA8440 N-Channel PowerTrench MOSFET tm 40V, 100A, 2.1mΩ Features Application • RDS on = 1.46mΩ (Typ.)@ VGS = 10V, ID = 80A • Automotive Engine Control • Qg(tot) = 345nC (Typ.)@ VGS = 10V • Powertrain Management • Low Miller Charge • Motors, Solenoids


    Original     		FDA8440 345nC FDA8440 PDF