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    100A1 Search Results

    100A1 Result Highlights (5)

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    9586100A1H Amphenol Communications Solutions XCede, High speed backplane connectors, 6-Pair, male. Visit Amphenol Communications Solutions
    958-4100-A1H Amphenol Communications Solutions XCede, High speed backplane connectors, 4-Pair, power, 1 up. Visit Amphenol Communications Solutions
    9586100A1J Amphenol Communications Solutions XCede, High speed backplane connectors, 6-Pair, male. Visit Amphenol Communications Solutions
    958-2100-A1H Amphenol Communications Solutions XCede, High speed backplane connectors, 2-Pair, male. Visit Amphenol Communications Solutions
    9584100A1J Amphenol Communications Solutions XCede, High speed backplane connectors, 4-Pair, power, 1 up. Visit Amphenol Communications Solutions
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    Vishay Semiconductors VETH100A1DD1-G3-08

    BIDIRECTIONAL SINGLE LINE ESD PR
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    DigiKey VETH100A1DD1-G3-08 Cut Tape 9,928 1
    • 1 $0.42
    • 10 $0.296
    • 100 $0.1497
    • 1000 $0.0906
    • 10000 $0.07287
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    ECS International Inc ECS-100A-184

    XTAL OSC XO 18.4320MHZ TTL TH
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    DigiKey ECS-100A-184 Bulk 1,006 1
    • 1 $3.3
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    • 100 $2.459
    • 1000 $2.12584
    • 10000 $1.9216
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    Component Electronics, Inc ECS-100A-184 5
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    ECS International Inc ECS-2100A-184

    XTAL OSC XO 18.4320MHZ HCMOS TTL
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    DigiKey ECS-2100A-184 Tube 344 1
    • 1 $3.3
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    • 100 $2.49525
    • 1000 $2.12676
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    Galco Industrial Electronics DMS3100A14S-F-DDK

    Connector
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    DigiKey DMS3100A14S-F-DDK 209 1
    • 1 $7.76
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    PEI Genesis MS3100A18-5S

    AB 3C 1#16,2#12 SKT RECP
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    DigiKey MS3100A18-5S Bulk 184 1
    • 1 $22.09
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    100A1 Datasheets (75)

    Part ECAD Model Manufacturer Description Curated Type PDF
    100A100FT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100FT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100FW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100FW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100GT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100GT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100GW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100GW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100JT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100JT150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A100JW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 10PF 150V P90 0505 Original PDF
    100A100JW150XT1K American Technical Ceramics Ceramic Capacitor 10PF 150V P90 0505 Original PDF
    100A101FT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101FT150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF
    100A101FW150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101FW150XT1K American Technical Ceramics Ceramic Capacitor 100PF 150V P90 0505 Original PDF
    100A101GT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JCA150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JP150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF
    100A101JT150XT American Technical Ceramics Capacitors - Ceramic Capacitors - CAP CER 100PF 150V P90 0505 Original PDF

    100A1 Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    175-PIN

    Abstract: No abstract text available
    Text: 175 PIN PLASTIC PGA A P Q B Bottom View D C U T 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 G H I J Q P NM L K J H G F E D C B A K L φM M E F X175S-100A1 NOTE Each lead centerline is located within φ 0.5 mm ( φ 0.020 inch) of its true position (T.P.) at maximum material condition.


    Original     		PDF X175S-100A1 175-PIN

    Raychem WCD 2015

    Abstract: 100A0111 100A1111
    Text: SPECIFICATION CONTROL DRAWING TITLE 100A1111 Date ONE CONDUCTOR CABLE, HALOGEN FREE, SHIELDED, JACKETED, 600 VOLT, 105°C 2-4-10 Revision 6 This specification sheet forms a part of the latest issue of Raychem Specification WCD 2015. SHIELD - TIN-COATED COPPER


    Original     		PDF 100A1111 100A0111 100A1111-24-* 100A1111-22-0-0 Raychem WCD 2015 100A0111 100A1111

    j 476

    Abstract: No abstract text available
    Text: 84 PIN CERAMIC PGA Glass Sealed A T P B Q (Bottom View) 12 S 11 10 9 8 7 6 D C U R 5 4 3 2 1 M L K J H G F E D C B A G Index mark I H J Index mark K L φM M E F X84RH-100A1 NOTE Each lead centerline is located within φ 0.254 mm ( φ 0.010 inch) of its true position (T.P.) at


    Original     		PDF X84RH-100A1 j 476

    D3332

    Abstract: No abstract text available
    Text: 64 PIN CERAMIC QFP 14 x 20 (FOR ES) A B F 64 D 33 32 C 51 52 20 19 1 G H J M Q K (Bottom View) X64B-100A1-1 T ITEM U V MILLIMETERS INCHES A 24.7 ± 0.4 0.972+0.017 –0.016 B 20.0 0.787 C 14.2 0.559 D 18.9 ± 0.4 0.744 ± 0.016 F 1.1 0.043 G 1.0 0.039 H


    Original     		PDF X64B-100A1-1 D3332

    Untitled

    Abstract: No abstract text available
    Text: Packing Name NEC Tray LA-029-A 84 pin Ceramic PGA Glass Sealed A T P B Q (Bottom View) 12 S 11 10 9 8 7 6 D C U R 5 4 3 2 1 M L K J H G F E D C B A Index mark I G H J Index mark K L φM M E F X84RH-100A1 NOTE Each lead centerline is located within φ 0.254


    Original     		PDF LA-029-A X84RH-100A1

    Untitled

    Abstract: No abstract text available
    Text: Packing Name NEC Tray LA-030 72 pin Ceramic PGA Seam Weld A (Bottom View) 11 10 9 8 7 D 6 5 4 3 2 1 L K J Index mark G H J I X72R-100A1 EIAJ CODE Weight (Reference Value) E D C B A E φM M F NOTE Each lead centerline is located within φ 0.254mm ( φ 0.010 inch) of its true position (T.P.) at


    Original     		PDF LA-030 254mm X72R-100A1

    Untitled

    Abstract: No abstract text available
    Text: Packing Name NEC Tray LA-099 175 pin Plastic PGA A P Q B Bottom View D C U T 15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 G H I J Q P NM L K J H G F E D C B A K L φM M E F X175S-100A1 NOTE Each lead centerline is located within φ 0.5 mm ( φ 0.020 inch) of its true position (T.P.) at


    Original     		PDF LA-099 X175S-100A1

    Continental RSDA

    Abstract: AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC
    Text: RS Series Single Phase DIN Rail Mount Relays FEATURES/BENEFITS • Automatic shutdown on • • • • • overtemperature Built-in, replaceable, semiconductor fuse Integrated heat sink Mounts on DIN rail or panel Optically isolated Touch safe • LED indicator


    Original     		PDF 28Vdc/9mA 280Vac 5-15mA 20Vac, amp-B00 Continental RSDA AUTOMATIC PHASE SELECTOR 13VAC 200 Amp Fuse copper bus bar RSDA 100-280VAC

    915 MHz RFID

    Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
    Text: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz


    Original     		PDF OT-323 SC-70) HSMS-285A HSMS-286A HSMS-285A 5965-8838E 5966-4282E 915 MHz RFID METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode

    AWT1921S11

    Abstract: AWT921 SSOP-28
    Text: AWT921 Integrated High Power Amp 900 MHz PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • • • • • • High output power levels High Efficiency True Surface Mount Package with Integrated Heat Slug Internal Bias Circuit Requiring Nominal Input Voltages +10% Low Cost


    Original     		PDF AWT921 SSOP-28 AWT921 AWT1921S11 SSOP-28

    epsilam 10

    Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
    Text: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial


    Original     		PDF LLE18150X epsilam 10 BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239

    2E816

    Abstract: 2d116 2e016 datasheet M35080FP 2F216 AC323
    Text: To all our customers Regarding the change of names mentioned in the document, such as Mitsubishi Electric and Mitsubishi XX, to Renesas Technology Corp. The semiconductor operations of Hitachi and Mitsubishi Electric were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog


    Original     		PDF M35080FP 2E816 2d116 2e016 datasheet 2F216 AC323

    philips ferrite 4330-030

    Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
    Text: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors


    Original     		PDF M3D159 LLE18010X SCA63 125002/00/02/pp12 philips ferrite 4330-030 philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips

    100B0R1BW

    Abstract: 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1 MW6IC2015NBR1
    Text: Freescale Semiconductor Technical Data Document Number: MW6IC2015N Rev. 0, 2/2006 RF LDMOS Wideband Integrated Power Amplifiers The MW6IC2015N wideband integrated circuit is designed for base station applications. It uses Freescale’s newest High Voltage 26 to 32 Volts LDMOS


    Original     		PDF MW6IC2015N MW6IC2015N MW6IC2015NBR1 MW6IC2015GNBR1 100B0R1BW 100A1R5BW A113 A114 A115 AN1955 C101 JESD22 MW6IC2015GNBR1

    tl741

    Abstract: VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST
    Text: Manufacturers’ Cross Reference Guide These tables are intended only as guides and may represent another lamp/ballast company's most similar product rather than an identical match. Individual manufacturer's performance values should be consulted. For a complete cross reference guide please consult our electronic


    Original     		PDF 10S11N 10S11N/F 15CAC/F-CD/2-12 --15S14/GR/CL 15T10 20T61/2DC/F 20T61/2/F 25CAC --25CAC-CD/2-120 25G181/2/W tl741 VEL-4P32-RH-TP sodium vapor lamp Magnetek ballast F32T8 transistor ballast 1000W VEL-3P32-RH-TP 13w cfl circuit D835 transistor PHILIPS T8 MAGNETIC BALLAST

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB


    Original     		PDF MRFG35005N MRFG35005NT1 MRFG35005ANT1. MRFG35005NT1

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.


    Original     		PDF MRFG35005MT1 MRFG35005NT1.

    1N1190

    Abstract: PBY306 1N3768 1N1183 1N1183R 1N1184 1N3766 PBY301 PBY302 SW11
    Text: 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 1N1183 . 1N1190, 1N3766, 1N3768, PBY301 . PB307 Silicon-Power-Rectifiers Silizium-Leistungs-Gleichrichter Version 2005-01-31 Nominal Current Nennstrom 7 Repetitive peak reverse voltage Periodische Spitzensperrspannung


    Original     		PDF 1N1183 1N1190, 1N3766, 1N3768, PBY301 PB307 1N1190 PBY306 1N3768 1N1183 1N1183R 1N1184 1N3766 PBY301 PBY302 SW11

    Untitled

    Abstract: No abstract text available
    Text: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class


    Original     		PDF MRFG35010MT1 MRFG35010NT1 MRFG35010MT1

    transistor GT 1081

    Abstract: MRFG35010AR5
    Text: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for


    Original     		PDF MRFG35010A MRFG35010AR1 MRFG35010AR5 MRFG35010A transistor GT 1081 MRFG35010AR5

    GL 7812

    Abstract: ATC 2603 LDMOS NEC
    Text: N PRELIMINARY DATA SHEET IO 3W, L/S-BAND MEDIUM POWER NE552R479A SILICON LD-MOSFET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE • SURFACE MOUNT PACKAGE: 5.7x5.7x1.1 mm MAX • CLASS AB OPERATION Linear Gain1 IN • ANALOG CELLULAR PHONES:


    Original     		PDF NE552R479A 24-Hour GL 7812 ATC 2603 LDMOS NEC

    Untitled

    Abstract: No abstract text available
    Text: 1W, L/S-BAND NE6510179A MEDIUM POWER GaAs HJ-FET FEATURES OUTLINE DIMENSIONS Units in mm • LOW COST PLASTIC SURFACE MOUNT PACKAGE PACKAGE OUTLINE 79A • HIGH OUTPUT POWER: POUT = +31.5 dBm TYP at VDS = 3.5 V, f = 900 MHz POUT = +32.5 dBm TYP at VDS = 3.5 V, f = 1900 MHz


    Original     		PDF NE6510179A 24-Hour

    MX0912B250Y

    Abstract: 33-AS IEC134 015 capacitor philips
    Text: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high


    OCR Scan     		PDF 33-AS" MX0912B250Y G04b34b T-33-Ã 711Dfl2b 004b352 0QMb43? MX0912B250Y 33-AS IEC134 015 capacitor philips

    Untitled

    Abstract: No abstract text available
    Text: S G S - T H O S I M S O N S D 1 89 5 -0 3 m . RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P o u t = 15 W MIN. WITH 9.2 dB GAIN PIN CONNECTION


    OCR Scan     		PDF SD1895-03 D07D75h