100A101 Search Results

915 MHz RFID

Abstract: HSMS-286A METAL DETECTOR circuit for make IC RFID 2.45 GHz 2.45 GHz single chip transmitter HSMS-2850 HSMS-286C 100A101MCA50 "zero-bias schottky diode" mark code t4 diode
Contextual Info: Surface Mount Microwave Schottky Detector Diodes in SOT-323 SC-70 Technical Data HSMS-285A Series HSMS-286A Series Features • Surface Mount SOT-323 Package • High Detection Sensitivity: Up to 50 mV/µW at 915 MHz Up to 35 mV/µW at 2.45 GHz Up to 25 mV/µW at 5.80 GHz

MX0912B250Y

Abstract: 33-AS IEC134 015 capacitor philips
Contextual Info: Data shaat •tatua data of Issu* HILXPS MX0912B250Y Preliminary specification NPN silicon planar epitaxial microwave power transistor June 1992 SbE D INTERNATIONAL • 7110fl2b Ü04b34fc, 7Q3 H P H I N FEATURES APPLICATION DESCRIPTION • Interdigitated structure; high

epsilam 10

Abstract: BY239 BDT91 LLE18150X SC15 erie 1250-003 diode BY239
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET LLE18150X NPN silicon planar epitaxial microwave power transistor Product specification File under Discrete Semiconductors, SC15 Philips Semiconductors September 1994 Philips Semiconductors Product specification NPN silicon planar epitaxial

philips ferrite 4330-030

Abstract: philips ferrite 4b1 TRansistor 648 BY239 BDT91 LLE18010X j160 capacitor philips
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D159 LLE18010X NPN microwave power transistor Product specification Supersedes data of December 1994 1999 Apr 22 Philips Semiconductors Product specification NPN microwave power transistor FEATURES • Diffused emitter ballasting resistors

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005N Rev. 5, 1/2008 MRFG35005NT1 replaced by MRFG35005ANT1. MRFG35005NT1 Gallium Arsenide PHEMT Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: S G S - T H O S I M S O N S D 1 89 5 -0 3 m . RF & MICROWAVE TRANSISTORS 1.6 GHz SATCOM APPLICATIONS 1.65 GHz 28 VOLTS OVERLAY DIE GEOMETRY ALL GOLD METALLIZED SYSTEM HIGH RELIABILITY AND RUGGEDNESS COOMON BASE P o u t = 15 W MIN. WITH 9.2 dB GAIN PIN CONNECTION

Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Contextual Info: Freescale Semiconductor Technical Data MRFG35010MT1 Rev. 4, 7/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistors MRFG35010NT1 MRFG35010MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Devices are unmatched and are suitable for use in Class

transistor GT 1081

Abstract: MRFG35010AR5
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010A Rev. 0, 5/2006 Gallium Arsenide PHEMT MRFG35010AR1 MRFG35010AR5 RF Power Field Effect Transistor Designed for WiMAX, WLL/MMDS or UMTS driver and final applications. Characterized from 500 to 5000 MHz. Device is unmatched and is suitable for

Contextual Info: Philips Components MZ0912B100Y D ISC R ETE SEM ICO N D U CTO R S D a ta s h a e t • t a lu s P re fim in a iy s p e c ific a tio n d a le o f le s u e J u ly 1 9 9 0 NPN silicon planar epitaxial microwave power transistor FEATU RES APPLICATIO N D ESCRIPTIO N

13009 TRANSISTOR equivalent

Abstract: D 13009 K transistor M 9718 4221 motorola transistor transistor E 13009 MRFG35030 transistor d 13009 MRFG35030R5 transistor 9718 transistor E 13009 equivalent
Contextual Info: MOTOROLA Freescale Semiconductor, Inc. Order this document by MRFG35030R5/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT Freescale Semiconductor, Inc. RF Power Field Effect Transistor MRFG35030R5 Designed for WLL base station applications with frequencies from 3400 to

marking 0619

Contextual Info: Freescale Semiconductor Technical Data MRFG35005MT1 Rev. 1, 1/2005 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35005MT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

Contextual Info: Whnl mL'nM HP Ea Wc kL aE rTdT Surface Mount Zero Bias Schottky Detector Diodes Technical Data Features • Surface M ount SOT-23/ SOT-143 Package • H igh D etection Sensitivity: Package Lead Code Identification Top V iew 40 mV/|iW at 915 MHz 30 mV/jiW at 2.45 GHz

MF1011B900Y

Abstract: SC15
Contextual Info: Philips Semiconductors Product specification Microwave power transistor MF1011B900Y FEATURES QUICK REFERENCE DATA • Suitable for short and medium pulse applications up to 100 |as pulse width, duty factor 10% Microwave performance up to T mb = 25 °C in a common-base class C

8772 P

Abstract: motorola 10116 transistor 17556 A113 MRFG35003MT1 motorola 6809 PLD15 transistor 115 h 8772 p 17556 transistor
Contextual Info: Freescale Semiconductor, Inc. MOTOROLA Order this document by MRFG35003MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line MRFG35003MT1 Gallium Arsenide PHEMT RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies

RF FET TRANSISTOR 3 GHZ

Abstract: A113 MRFG35003NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35003N Rev. 4, 1/2006 Gallium Arsenide PHEMT RF Power Field Effect Transistor MRFG35003NT1 Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

6 017 03 61

Abstract: A113 MRFG35010MT1 MRFG35010NT1 D55342M07
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35010MT1 Rev. 5, 2/2006 Replaced by MRFG35010NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

Marking Z7 Gate Driver

Abstract: MRFG35005MT1 A113 MRFG35005NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 3, 1/2006 Replaced by MRFG35005NT1. There are no form, fit or function changes with this part replacement. N suffix added to part number to indicate transition to lead - free terminations.

30374

Abstract: Esan
Contextual Info: E-SAN ELECTRONIC CO LTD Active Delay Line TTL Interface • Industry Standard 24 E D • 10 Tap Output Specifications: • Delay tolerance BD374Q2 DOODQSfi Ö • /^3 100A Series • 30 Pin Dip Package Features: • Schottky TTL interface • Low power schottky available named " 1 00AL-1 Oxxx'

PIN Diode Switch for frequencies up to 10 GHz

Abstract: superheterodyne receiver GHz radar metal detector diagrams 2.45 GHz single chip transmitter Optotek zero bias diode
Contextual Info: Designing Detectors for RF/ID Tags Application Note 1089 Abstract The RF/ID market is growing rapidly, with everything from cattle to cars carrying radio frequency identification RF/ID tags. Severe cost, size and DC power constraints in the tag itself have

A113

Abstract: MRFG35005MT1 MRFG35005NT1
Contextual Info: Freescale Semiconductor Technical Data Document Number: MRFG35005MT1 Rev. 2, 5/2005 Gallium Arsenide PHEMT MRFG35005NT1 MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

ATC 1184

Abstract: A113 MRFG35005MT1 C 4804 transistor "class AB Linear" z9 ma 814
Contextual Info: MOTOROLA Order this document MRFG35005MT1/D SEMICONDUCTOR TECHNICAL DATA The RF GaAs Line Gallium Arsenide PHEMT MRFG35005MT1 RF Power Field Effect Transistor Designed for WLL/MMDS/BWA or UMTS driver applications with frequencies from 1.8 to 3.6 GHz. Device is unmatched and is suitable for use in Class AB

Laser-Distanz-Sensor OADM 13I6564-S35A

Abstract: baumer electric CH-8501 ohdk 101490 16P56 baumer electric CH-8500 frdk baumer+OSDK+10D9001+/+OEDK+10P5101
Contextual Info: Präzis, messbar besser. Optoelektronische Sensoren. Lichtleiter und Lichtleitergeräte. Edition 2011 Keine Zeitung, keine Schokolade, kein Auto, kein Computer, kein Mobiltelefon könnte heute hergestellt werden, kein Brief oder Paket seinen Empfänger erreichen und kein Flasche Bier könnte abgefüllt werden, wenn nicht optische Sensoren Objekte erfassen, Distanzen messen, Farben erkennen,

Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET MX0912B100Y; MZ0912B100Y NPN microwave power transistors Product specification Supersedes data of June 1992 1997 Feb 20 Philips Semiconductors Product specification NPN microwave power transistors MX0912B100Y; MZ0912B100Y