100JUH Search Results

A0764

Abstract: 2SJ314-01L T151 Scans-0063210
Contextual Info: 2SJ314-01L, S FUJI POWER MOS-FET P-CHANNEL SILICON POWER MOS-FET _ -FAP-III SERIES • Features Outline Draw ings • Hiyh current • Low on-resistance • No secondary breakdown • Low driving power • Hiyh forward Transconductance

2SK2892-01R

Contextual Info: m DWG.NO. m o o o o B * i: £ 03 3 o a O 5' O o H04-004-07 GO This material and the information herein is the property of Fuji Electric C o .,ltd . They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

A2272

Contextual Info: 2SK1936-01 FUJI P O W E R M O S - F E T N CHANNEL SILICON POWER IVIOS-FET F A P -IIA SERIES • Features Outline Drawings • High speed switching • -ow on-resistance • Mo secondary breakdown • .ow driving power • High voltage • ycs= ± 30V Guarantee

Contextual Info: DWG.NO. m o o o O o H04-004-07 CO £ 5? c 3 o o n 03 o o •5 T] .C m o o' O o ~r~ Q. This material and the information herein is the property of Fuji Electric Co.,Ltd. They shall be neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any

2SJ314-01

Abstract: 2SJ314-01L T151
Contextual Info: 2SJ314-01LS FUJI POW ER M OS-FET P-CHANNEL SILICON POWER MOS-FET FAP-III S E R IE S I Features Outline Drawings »Hiyh current *Low on-resistance »No secondary breakdown ►Low driving power »High forward Transconductance »Avalanche-proof ¡Applications

cts 8321

Abstract: Matsushita mmi 50 Matsushita mmi 25 8321A I321 MA729 S-8321 S-8321A S-8322 Matsua mmi 50
Contextual Info: Contents Features . 1 Applications . 1 Block diagram . 1 Selection Guide . 2

2SK2098-01M

Abstract: 2sk2098
Contextual Info: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - FAP-III SERIES • Features • • • • • • Outline Drawings High current Low on-resistance No secondary breakdown

16085A

Abstract: NLF453232 NLF453232T-681K 15d 390k NL322522T-100J 680J NL252018T-101J
Contextual Info: Leadless Inductors NL and NLF Magnetic Shielded Series FEATURES • Highly reliable wire wound chip inductors with metal terminals and a body of heat resistant resin, these inductors offer very strong solderability by flow, reflow soldering or soldering iron.

2SK2753-01

Contextual Info: S P E C I F I C A T I O N DEVICE NAME : P o w er M O SFET TYPE NAME : 2 S K 2 7 5 3 — 0 1 SPEC. No. F u j i E l e c t r i c Co., Ltd. T h is Sp e cificatio n is subject to change without notice. D A TE DRAWN CHECKED NAME APPROVED F iiji E le c tr ic C o ^ id

Contextual Info: S P E C I F I C A T I ON DEVICE NAME : P o w e r MOSFET TYPE NAME : 2 S K 2 0 9 8 - 0 1M R SPEC. No. Fu j i E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric CoJLId. DRAWN CHECKED o z d * o 1 /

l0241

Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : SPEC. NO. : Power MOSFET 2SK2809-01MR Fuji Electric Co.Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co.,Ltd. DRAW N/ CHECKED/ w Y 0257-R-004a 1.Scope This specifies Fuji Power MOSFET 2SK2809-01MR

Contextual Info: S P E C I F I C A T I O N T E N T A T I VE DEVICE NAME : TYPE NAME : SPEC. No. : Power MOSFET 2 S K 2 7 5 8 - 0 1 L. S F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAME APPROVED 1 ' . . 5 Fuji Electric CaJ-td

2SK2098-01M

Abstract: 2sk2098
Contextual Info: 2SK2098-01M S IP M O S F U J I P O W E R M O S -F E T N-CHANNEL SILICON POWER MOS-FET _ _ _ - F A P - I I I • Features S E R I E S Outline Drawings • High current • Low on-resistance

GFIJ

Contextual Info: 2SK2027-01 FU JI POWER M OS-FET IM-CHANNEL SILICON POWER MOS-FET FAP-IIA SERIES Outline Drawings • Features • High speed switching 03.6*0.2 • Low on-resistance < k5±02 l.3±0.2 • No secondary breakdown • l.ow driving power • High voltage • V gs = ± 3 0 V Guarantee

Contextual Info: S P E C I F I C A T I O N T E N T A T DEVICE NAME ; TYPE NAME : IVE P o w e r M O S F E T 2 S K 2 6 3 9 — 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAM E APPROVED Fuji Electric Co4Jtd CHECKED

Contextual Info: H 04-004-07 This material and the information herein is the properly of Fuji Electric Co.Ltd. They shall De neither reproduced, copied, lent, or disclosed in any way whatsoever for the use of any third party nor used for the manufacturing purposes without

Contextual Info: XC6381 Series PFM Controlled, Step-up DC/DC Converters Duty Ratio 58% • # # # # ♦ Duty 58% ♦ CMOS Low Power Consumption ♦ Operating Voltage: 0.9V~10.0V ♦ Output Voltage Range: 2.0V~7.0V ♦ Output Voltage Accuracy: i2.5% Applications Cellular phones, pagers

2SK2753-01

Contextual Info: X S P E C I F I C A T I O N DEVICE NAME : P o w e r M O S F E T TYPE NAME : 2 S K 2 7 5 3 —0 1 SPEC. No. F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE DRAWN CHECKED NAM E APPROVED Fuji Electric C o ¿id A

LAL04 taiyo yuden

Abstract: LAL03 LAL04 LAN02OR12K LAL04M
Contextual Info: AXIAL LEADED INDUCTORS OPERATING TEMP -25— M 05”C ilnan iB 3 S *ft£ -£ t; (Including self-generated heat) ? "W Extremely reliable inductors that are ideal for automatic insertion. •Highly efficient automated production processes can provide high quality

Contextual Info: ^ UNITRODE UCC3941-3/-5/-ADJ PRELIMINARY 1V Synchronous Boost Converter FEATURES DESCRIPTION • 1V Input Voltage Operation Startup Guaranteed Under Full Load on Main Output With Operation Down to 0.4V The UCC3941 family of low input voltage single inductor boost converters

GE10001

Abstract: GE10000 GE10009 10-009 GE10007 GE10002 GE10003 GE10004 GE10008 GEI0004
Contextual Info: HIGH SPEED GE10000GE10009 NPN POWER DARLINGTON TRANSISTORS 500 VOLTS 10-20 AMPS, 175 WATTS These devices are designed for use in high speed switching applications, such as off-line switching power supplies, A C & DC motor control, UPS systems, ultrasonic equipm ent and

Contextual Info: S P E C I F I C A T I O N T E N T A T IVE DEVICE NAME : TYPE NAME : Power MOSFET 2 S K 2 7 5 5 - 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CaJ-td. DRAWN CHECKED o

2SK2517-01L

Abstract: 2SK2517-01S
Contextual Info: S P E C I F I C A T I O N DEVICE NAME : TYPE NAME : Power M O SF ET 2 S K 2 5 1 T - 0 1 L. S SPEC. No. F u j i E l e c t r i c Co., Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric Co^lid. DRAWN CHECKED i o as o'

2SK2753-01

Abstract: T0-247
Contextual Info: A 1 . Scope This specifies Fuj i power MOSFET 2 S K 2 7 5 3 — 0 1 2. Construction N-channel enhancementmode power 3. Application for switching 4. T0-3P Outview Outview 5. Absolute maximum ratings Seeto 5/11 page at Tc=25°C Description MOSFET Symbo1 unless otherwise specified