fet 741
Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate
Text: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)
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P0120002P
250mW
41dBm
OT-89
P0120002P
fet 741
P0110002P
KP022J
RR0816
pin details of FET
eudyna transistors catalog
ic 4075 or gate
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KP027J
Abstract: P0120007P RR0816
Text: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure
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P0120007P
250mW
41dBm
OT-89
P0120007P
KP027J
RR0816
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Untitled
Abstract: No abstract text available
Text: APW7137 1MHz, High Efficiency, Step-Up Converter with Internal FET Switch Features General Description • Wide 2.5V to 6V Input Voltage Range • Built-in 0.6Ω N-channel MOSFET • Built-in Soft-Start • High Efficiency up to 90% • <1µA Quiescent Current during Shutdown
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APW7137
APW7137
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APW7137
Abstract: marking c7 sot-23-5 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 marking code AC sot 23-5 pmp 3.00 dc sot-23-5 op amp or regulator A102 A104 A108 A115
Text: APW7137 1MHz, High Efficiency, Step-Up Converter with Internal FET Switch Features General Description • Wide 2.5V to 6V Input Voltage Range • Built-in 0.6Ω N-Channel MOSFET The APW7137 is a fixed switching frequency 1MHz typical , current-mode, step-up regulator with an inte-
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APW7137
APW7137
JESD-22,
MIL-STD-883-3015
VMM200V
marking c7 sot-23-5
1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5
marking code AC sot 23-5
pmp 3.00 dc
sot-23-5 op amp or regulator
A102
A104
A108
A115
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BC 547 pnp
Abstract: ISO-14001 KP027J P0120002P P0120007P RR0816 Ids2590 toko 4437
Text: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package
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P0120007P
250mW
41dBm
OT-89
17GHz
KP027J
P0120007P
BC 547 pnp
ISO-14001
KP027J
P0120002P
RR0816
Ids2590
toko 4437
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sumitomo 131 datasheet
Abstract: P0120002P ml marking sot 89 ISO-14001 KP022J RR0816 marking c7 sot-89 P0110002P
Text: P0120002P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)
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P0120002P
250mW
41dBm
OT-89
17GHz
KP022J
P012rally,
sumitomo 131 datasheet
P0120002P
ml marking sot 89
ISO-14001
KP022J
RR0816
marking c7 sot-89
P0110002P
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APW7137
Abstract: AMP marking c7 sot-23-5 Marking w37x APW71 marking c7 sot-23-5 A102 MIL-STD-883D-1005 sot-23-5 marking code C8
Text: APW7137 1MHz, High Efficiency, Step-Up Converter with Internal FET Switch Features General Description • Wide 2.5V to 6V Input Voltage Range • Built-in 0.6Ω N-Channel MOSFET The APW7137 is a fixed switching frequency 1MHz typical , current-mode, step-up regulator with an inte-
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APW7137
APW7137
AMP marking c7 sot-23-5
Marking w37x
APW71
marking c7 sot-23-5
A102
MIL-STD-883D-1005
sot-23-5 marking code C8
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Untitled
Abstract: No abstract text available
Text: APW7137 1MHz, High Efficiency, Step-Up Converter with Internal FET Switch Features General Description • Wide 2.5V to 6V Input Voltage Range • Built-in 0.6Ω N-channel MOSFET • Built-in Soft-Start • High Efficiency up to 90% • <1µA Quiescent Current during Shutdown
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APW7137
APW7137
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APW7137
Abstract: 1. EN 2. GND 3. VOUT 4. VIN 5. FB SOT-23-5
Text: APW7137 1MHz, High Efficiency, Step-Up Converter with Internal FET Switch Features General Description • Wide 2.5V to 6V Input Voltage Range • Built-in 0.6Ω N-Channel MOSFET The APW7137 is a fixed switching frequency 1MHz typical , current-mode, step-up regulator with an inte-
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APW7137
APW7137
over-temp102
JESD-22,
MIL-STD-883-3015
100mA
1. EN 2. GND 3. VOUT 4. VIN 5. FB SOT-23-5
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Untitled
Abstract: No abstract text available
Text: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-090617 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is
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R1172x
EA-122-090617
R1172x
R1172x101x
R1172x301x
R1172x501x
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Untitled
Abstract: No abstract text available
Text: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-130924 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is
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R1172x
EA-122-130924
R1172x
R1172x101x
R1172x301x
R1172x501x
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SHF0189Z
Abstract: SHF-0189Z H1 SOT-89 fet MARKING RFMD H1 SOT-89 transistor rf SHF-0189 lot code RFMD H1 SOT-89
Text: SHF-0189 Z SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET
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SHF-0189
05Ghz
OT-89
27dBm
100mA.
40dBm
SHF0189Z
SHF-0189Z
H1 SOT-89 fet
MARKING RFMD
H1 SOT-89 transistor rf
lot code RFMD
H1 SOT-89
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SHF-0189Z
Abstract: SHF0189Z
Text: SHF0189Z SHF0189Z 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0189Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET
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SHF0189Z
05Ghz
SHF0189Z
OT-89
27dBm
100mA.
40dBm
SHF-0189Z
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Untitled
Abstract: No abstract text available
Text: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-111027 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is
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R1172x
EA-122-111027
Room403,
Room109,
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R1172H
Abstract: No abstract text available
Text: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-110627 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is
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R1172x
EA-122-110627
R1172x
Room403,
Room109,
10F-1,
R1172H
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Untitled
Abstract: No abstract text available
Text: R1 1 7 2 x SERI ES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-111027 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is
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EA-122-111027
R1172x
R1172x
Room403,
Room109,
10F-1,
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SHF-0186K
Abstract: Sirenza Microdevices, Inc sirenza fet
Text: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
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SHF-0186K
100mA.
100mA)
SHF-0186K
EDS-101577
Sirenza Microdevices, Inc
sirenza fet
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AN031
Abstract: J154 SHF-0189
Text: Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current
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SHF-0189
100mA.
100mA)
SHF-0189
SHF-0x89
EDS-101240
AN031
J154
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equivalent transistor c 243
Abstract: No abstract text available
Text: MITSUBISHI RF POWER MOS FET ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS RD01MUS1 Silicon MOSFET Power Transistor 520MHz,1W OUTLINE DRAWING DESCRIPTION 4.6MAX RD01MUS1 is a MOS FET type transistor specifically designed for VHF/UHF RF amplifiers applications.
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RD01MUS1
520MHz
RD01MUS1
520MHz
48MAX
53MAX
equivalent transistor c 243
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shf0186k
Abstract: SHF-0186K Sirenza Microdevices, Inc
Text: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
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SHF-0186K
100mA.
100mA)
SHF-0186K
EDS-101577
shf0186k
Sirenza Microdevices, Inc
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sirenza fet
Abstract: No abstract text available
Text: Product Description Sirenza Microdevices’ SHF-0186 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.
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SHF-0186
100mA.
100mA)
SHF-0186
EDS-101574
sirenza fet
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IFT2
Abstract: TLP296 TLP296G
Text: TLP296G PHOTO RELAY TENTATIVE DATA TIP296G U nit in mm TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION «j The TOSHIBA TLP296G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 lead DIP package.
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TLP296G
TIP296G
TLP296G
100mA
2500Vrms
100mA
IFT2
TLP296
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Untitled
Abstract: No abstract text available
Text: SEMICONDUCTOR TO SH IB A TECHNICAL TOSHIBA PHOTOCOUPLER DATA TLP296G PHOTO RELAY TENTATIVE DATA TLP296G Unit in mm TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP296G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 lead DIP
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TLP296G
TLP296G)
TLP296G
100mA
2500Vrms
100mA
100mA,
5X1010
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TS01 DIODE
Abstract: No abstract text available
Text: PHOTO RELAY TLP296G TENTATIVE DATA TLP296G TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP296G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 lead DIP package. The TLP296G is a bi-directional switch which can replace mechanical
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TLP296G
TLP296G)
TLP296G
100mA
2500Vrms
TS01 DIODE
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