100MA JUNCTION FET Search Results

fet 741

Abstract: P0110002P KP022J P0120002P RR0816 pin details of FET eudyna transistors catalog ic 4075 or gate
Contextual Info: Technical Note P0120002P 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)

KP027J

Abstract: P0120007P RR0816
Contextual Info: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package · Low Noise Figure

APW7137

Abstract: marking c7 sot-23-5 1. VOUT 2. GND 3. VIN 4. CE 5. VOUT SOT-23-5 marking code AC sot 23-5 pmp 3.00 dc sot-23-5 op amp or regulator A102 A104 A108 A115
Contextual Info: APW7137 1MHz, High Efficiency, Step-Up Converter with Internal FET Switch Features General Description • Wide 2.5V to 6V Input Voltage Range • Built-in 0.6Ω N-Channel MOSFET The APW7137 is a fixed switching frequency 1MHz typical , current-mode, step-up regulator with an inte-

BC 547 pnp

Abstract: ISO-14001 KP027J P0120002P P0120007P RR0816 Ids2590 toko 4437
Contextual Info: P0120007P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC 4 ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package

sumitomo 131 datasheet

Abstract: P0120002P ml marking sot 89 ISO-14001 KP022J RR0816 marking c7 sot-89 P0110002P
Contextual Info: P0120002P Technical Note 250mW GaAs Power FET Pb-Free Type ♦Features SUMITOMO ELECTRIC ♦Functional Diagram • Up to 2.7 GHz frequency band · Beyond +22 dBm output power · Up to +41dBm Output IP3 · High Drain Efficiency · 15dB Gain at 2.1GHz · SOT-89 SMT Package (Pb-free)

IFT2

Abstract: TLP296 TLP296G
Contextual Info: TLP296G PHOTO RELAY TENTATIVE DATA TIP296G U nit in mm TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION «j The TOSHIBA TLP296G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 lead DIP package.

Contextual Info: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-090617 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is

Contextual Info: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-130924 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is

SHF0189Z

Abstract: SHF-0189Z H1 SOT-89 fet MARKING RFMD H1 SOT-89 transistor rf SHF-0189 lot code RFMD H1 SOT-89
Contextual Info: SHF-0189 Z SHF-0189(Z) 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF-0189 is a high performance AIGaAs/GaAs Heterostructure FET (HFET) housed in a low-cost surface-mount plastic package. The HFET

SHF-0189Z

Abstract: SHF0189Z
Contextual Info: SHF0189Z SHF0189Z 0.05Ghz to 6GHz, 0.5Watt GaAs HFET 0.05GHz to 6GHz, 0.5WATT GaAs HFET Package: SOT-89 Product Description Features RFMD’s SHF0189Z is a high performance AIGaAs/GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET

Contextual Info: SEMICONDUCTOR TO SH IB A TECHNICAL TOSHIBA PHOTOCOUPLER DATA TLP296G PHOTO RELAY TENTATIVE DATA TLP296G Unit in mm TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP296G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 lead DIP

Contextual Info: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-111027 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is

Contextual Info: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-100401 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is

R1172H

Contextual Info: R1172x SERIES SUPER LOW ON RESISTANCE / LOW VOLTAGE 1A LDO NO.EA-122-110627 OUTLINE The R1172x Series are CMOS-based positive voltage regulator ICs. The R1172x Series have features of super low dropout, 1A output current capability. Even the output voltage is set at 1.5V, on resistance of internal FET is

AN031

Abstract: J154 SHF-0189
Contextual Info: Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current

TS01 DIODE

Contextual Info: PHOTO RELAY TLP296G TENTATIVE DATA TLP296G TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION The TOSHIBA TLP296G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 lead DIP package. The TLP296G is a bi-directional switch which can replace mechanical

shf0186k

Abstract: SHF-0186K Sirenza Microdevices, Inc
Contextual Info: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

sirenza fet

Contextual Info: Product Description Sirenza Microdevices’ SHF-0186 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surfacemount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

AN-020

Abstract: sirenza fet
Contextual Info: Product Description Sirenza Microdevices’ SHF-0186K is a high performance AlGaAs/GaAs Heterostructure FET HFET housed in a lowcost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current resulting in higher PAE and improved linearity.

AN031

Contextual Info: Product Description Sirenza Microdevices’ SHF-0189 is a high performance AlGaAs/ GaAs Heterostructure FET HFET housed in a low-cost surface-mount plastic package. The HFET technology improves breakdown voltage while minimizing Schottky leakage current

Contextual Info: SEMICONDUCTOR TO SH IB A TECHNICAL TOSHIBA PHOTOCOUPLER DATA TLP296G PHOTO RELAY TENTATIVE DATA TLP296G U nit in mm TELECOMMUNICATION DATA ACQUISITION MEASUREMENT INSTRUMENTATION 8 ti The TOSHIBA TLP296G consists of gallium arsenide infrared emitting diode optically coupled to a photo-MOS FET in a 8 lead DIP

MOSFET P-channel SOT-23-6

Abstract: cl5000 transistor EP 430 LM5114
Contextual Info: LM5114 Single 7.6A Peak Current Low-Side Gate Driver General Description Features The LM5114 is designed to drive low-side MOSFETs in boost type configurations or to drive secondary synchronous MOSFETs in isolated topologies. With strong sink current capability, the LM5114 can drive multiple FETs in parallel. The

Contextual Info: FEATURES • • • • • HIGH VOLTAGE — 450V LOW QUIESCENT CURRENT — 2mA HIGH OUTPUT CURRENT — 100mA PROGRAMMABLE CURRENT LIMIT LOW BIAS CURRENT — FET Input APPLICATIONS • • • • PIEZOELECTRIC POSITIONING HIGH VOLTAGE INSTRUMENTATION ELECTROSTATIC TRANSDUCERS

Contextual Info: f i H W S E M I C O N D U C T O R A R R HIP4081A IS 80V/2.5A Peak, High Frequency Full Bridge FET Driver March 1995 Description Features Independently Drives 4 N-Channel FET in Half Bridge or Full Bridge Configurations Bootstrap Supply Max Voltage to 95VDC