100MHZ NPN TRANSISTORS Search Results

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-220F 3DA4793 Plastic-Encapsulate Transistors TO-220F TRANSISTOR NPN FEATURES . High Transition Frequency : fT=100MHZ(Typ) . Complementary to 3CA1837 . Collector Power Dissipation PCM : 2W (Tamb=25℃)

bf494

Abstract: bf 494 BF495 Transistors BF 494 BF 494 C bf494 emitter common BP495
Contextual Info: BF 494 BF 495 NPN SILICON RF SMALL SIGNAL TRANSISTORS $ | j V - iììp f j S y CASE T0-92E THE BF494, BF495 ARE NPN SILICON PLANAR EPITAXIAL TRANSISTORS FOR RF SMALL SIGNAL APPLICATIONS UP TO 100MHz. CBE BF494 ABSOLUTE MAXIMUM RATINGS BF495 Collector-Base Voltage

100MHZ

Abstract: 2SC2714 Marking qy
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Small reverse Transfer Capacitance:Cre=0.7pF(typ.) z Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) 3. COLLECTOR

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Transistors SOT-23 2SC2714 TRANSISTOR NPN 1. BASE 2. EMITTER FEATURES z Small reverse Transfer Capacitance:Cre=0.7pF(typ.) z Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) 3. COLLECTOR

Contextual Info: Ordering number : ENN3020 NPN Epitaxial Planar Silicon Transistors 2SC4399 High-Frequency General-Purpose Amplifier Applications Features Package Dimensions • High power gain : PG=25dB typ f=100MHz . · Ultrasmall-sized package permitting the 2SC4399applied sets to be made small and slim.

ZTX320

Abstract: ZTX321 ZTX322 ZTX323 DSA003764
Contextual Info: NPN SILICON PLANAR HIGH SPEED SWITCHING TRANSISTORS ZTX320 ZTX321 ZTX322 ZTX323 ISSUE 3 – APRIL 94 FEATURES * 15 Volt VCEO * fT=600 MHz APPLICATIONS * VHF/UHF operation TYPICAL CHARACTERISTICS 0.4 PD - Power Dissipation Watts 1000 fT - MHz 800 VCE=10V f=100MHz

SMD 6v Transistor

Abstract: 100MHZ NPN TRANSISTORS TRANSISTOR pc 135 2SC4399 100MHZ NPN TRANSISTORS smd
Contextual Info: Transistors IC SMD Type NPN Epitaxial Planar Silicon Transistor 2SC4399 Features High power gain : PG=25dB typ f=100MHz . applied sets to be made small and slim. 1 Emitter 2 Base 3 Collector Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage

Contextual Info: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1

ic 4042

Abstract: LS301 LS302 LS303
Contextual Info: LS301 LS302 LS303 HIGH VOLTAGE SUPER-BETA MONOLITHIC DUAL NPN TRANSISTORS Linear Integrated Systems FEATURES hFE ≥ 2000 @ 1.0µA TYP. VERY HIGH GAIN LOW OUTPUT CAPACITANCE COBO ≤2.0pF TIGHT VBE MATCHING |VBE1-VBE2| = 0.2mV TYP. HIGH fT 100MHz C1 ABSOLUTE MAXIMUM RATINGS NOTE 1

circuit diagram for je 182 npn power transistor

Abstract: fj06
Contextual Info: rz 7 ^ 7 # S G S -T H O M S O N 5 H J O T is M Ü S T S F J S E R I E S MIXED ANALOG - DIGITAL BIPOLAR ARRAYS • ADVANCED BIPOLAR TECHNO LO GY : . NPN, F t = 3GHz . 2 M ETAL LAVER . 100MHz, ECL FUNCTIONS ■ FULL ESD PROTECTION ■ POWER SUPPLY : MAXIMUM RATINGS = UP TO 15V

2SC4793

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# 2SC4793 Features • • • NPN Silicon Transistors High Voltage: V BR CEO=230V High Transition Frequency: fT=100MHz(Typ.) Complementary to 2SA1837

Contextual Info: Transistors SOT23 B SOT23 Case NPN miniReel a » miniBag Order Order Number Number l ^ 7 } Type 500 pcs. ^ 100 pcs. 0 NPN General Purpose MMBT2369 73-2369 53-2369 BC818-16 73-8181 53-8181 BC818-25 73-8182 53-8182 BC818-40 73-8183 53-8183 BC848A 73-8481 53-8481

NPN CBO 40V CEO 25V EBO 5V

Abstract: MMST8598
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SMT SST1130 MMST1130 BV cbo BVceo Min. Min. 30V 25V Vce (sat) BV ebo '“ ° @VCB . hff. @lc & Vce Min. Max. Min. Max. Max.

2907A

Abstract: 2222a npn 2907A 2222a NPN tr 2222a npn-pnp dual NPN, PNP for 500ma, 30v 2222A transistors 22222a transistor 2222a data sheet
Contextual Info: MMDT2227DW NPN+PNP Dual General Purpose Transistors P b Lead Pb -Free 6 5 1 Features: * Complementary Pair * Epitaxial Planar Die Construction * Ultra-Small Surface Mount Package * One 2222A Type (NPN),One 2907A Type (PNP) * Ideal for Low Power Amplification and Switching

pnp and npn

Abstract: BC847PN
Contextual Info: BC847PN Complementary Transistor PNP and NPN SOT-363 Features — Epitaxial Die Construction — Two internal isolated NPN/PNP Transistors in one package MAKING: 7P MAXIMUM RATINGS TR1 (TA=25℃ unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage

Contextual Info: BC847BVN Dual NPN+PNP Transistors Elektronische Bauelemente Plastic-Encapsulate Transistors SOT-563 RoHS Compliant Product FEATURES .002 0.05 .000(0.00) .051(1.30) .043(1.10) .012(0.30) .004(0.10) * Epitaxial Die Construction * Ultra-Small Surface Mount Package

t6753

Abstract: transistor ic1A FZT653 ic1a ZDT6753 FZT753 DSA003725
Contextual Info: SM-8 COMPLEMENTARY MEDIUM POWER TRANSISTORS ZDT6753 ISSUE 1 – JANUARY 1996 C1 B1 C1 E1 C2 B2 C2 E2 NPN PNP SM-8 8 LEAD SOT223 PARTMARKING DETAIL – T6753 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL NPN PNP UNIT Collector-Base Voltage VCBO 120 -120 V Collector-Emitter Voltage

sot23 marking code 8pf

Abstract: marking r2k R2Z SOT23 SSTA29 G1F G1K G3F MARKING CODE B25 SOT23-5
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) #NPN Transistors General purpose small signal amplifiers SST SST1130 SMT MMST1130 BVcbo BVceo BV ebo @VC8 ui Min. Min. Min. Max. Min. Max. 30V 25V 5V 50nA 20V 120 360 60 ^ ^ce 2mA 1V

marking r2k

Abstract: marking r1c GAJ SOT23 R1P SOT-223
Contextual Info: Transistors SST U. S. /European SOT-23 • SMT (SC-59/Japanese SOT-23) •N P N Transistors General purpose small signal amplifiers SST SMT BV qbo Min. BV ceo Min. b v EB0 Min. SSTH30 MMST1130 30V 25V 5V SST5088 MMST5088 35V 30V 4.6V 'f° Max. @VCB . hF.E.

Contextual Info: MPSA05 MPSA06 MPSA55 MPSA56 NPN PNP COMPLEMENTARY SILICON TRANSISTORS w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR MPSA05, MPSA55 series devices are complementary silicon transistors designed for low power output and medium power

bc237

Abstract: BC237B bc238 bc237a bc237c bc239 238B 238c
Contextual Info: BC237/238/239 NPN TO-92 Bipolar Transistors 1. COLLECTOR TO-92 2. BASE 3. EMITTER Features Amplifier dissipation NPN Silicon MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCEO VEBO Parameter Value BC237 45 BC238/239 25 Collector-Emitter Voltage

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-363 Plastic-Encapsulate Transistors MMDT5451 SOT-363 DUAL TRANSISTOR NPN+PNP FEATURES C1 B2 z Epitaxial Planar Die Construction z Ideal for low Power Amplification and Switching z One 5551(NPN), one 5401(PNP)

BC847PN

Abstract: pnp transister symbol transister NPN TRANSISTER Tr2 transister 1A TRANSISTER chip transister marking B2 NPN/PNP transistor Silicon Transister
Contextual Info: BC847PN NPN - PNP Silicon Multi-Chip Transistor Elektronische Bauelemente RoHS Compliant Product SOT-363 FEATURE       Epitaxial Die Construction Two internal isolated NPN/PNP transistors in one package Power Dissipation PCM : 0.2 W Temp. = 25˚C

Contextual Info: PJ2N2222A NPN Epitaxial Silicon Transistors GENERAL PURPO SE TRANSISTO R TO-92 • Collector-Emitter Voltage: VCEO = 40V • • Collector Dissipation: P D max = 625 mW - TO-92 SOT-23 300 mW - SOT-23 ABSOLUTE MAXIMUM RATINGS (T a = 25℃) Characteristics