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    Carling Technologies TIHL51-1C-WH-A (ALTERNATE: THH-54171100|TIHL51-1C-WH-A|TIHL511CWHA)

    Rocker Switch, Full Sized, Tippette Series | Carling Technologies TIHL51-1C-WH-A
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    RS TIHL51-1C-WH-A (ALTERNATE: THH-54171100|TIHL51-1C-WH-A|TIHL511CWHA) Bulk 14 Weeks 10
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    • 10 $28.35
    • 100 $27.5
    • 1000 $26.93
    • 10000 $26.93
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    Untitled

    Abstract: No abstract text available
    Text: Ordering number: EN 2 7 3 2 2SC3998 No.2732 NPN Triple Diffused Planar Silicon Transistor SAiYO i Ultrahigh-Definition CRT Display Horizontal Deflection Output Applications Features . High speed tf=100ns typ . High breakdown voltage (VCB0=1500V) . High reliability (adoption of HVP process)


    OCR Scan     		PDF 2SC3998 100ns N158MO GQ5G372 100tiH 0D5Q373

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR SflE » H a r r is U U SEM ICO N D UCTOR REGISTRATION PENDING Currently Available as FRK150 D, R, H • 43D2271 0045725 2T3 « H A S 2N7291D, 2N7291R 2N7291H Radiation Hardened N-Channel Power MOSFETs December1992 Features Package


    OCR Scan     		PDF 43D2271 FRK150 2N7291D, 2N7291R 2N7291H T0-204AE 100KRAD 300KRAD 1000KRAD 3000KHAD

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POW ER M OSFET FS30SMH-06 HIGH-SPEED SWITCHING USE FS30SMH-06 • 2.5V DRIVE • VDSS .60V . 30m£2 • r D S O N (M A X )


    OCR Scan     		PDF FS30SMH-06

    Untitled

    Abstract: No abstract text available
    Text: MITSUBISHI Neh POWER MOSFET FS30UM-2 HIGH-SPEED SWITCHING USE FS30UM-2 • 10V DRIVE • VDSS .100V • rDS ON (MAX) . 100mi2 • I d . 30A


    OCR Scan     		PDF FS30UM-2 100mi2 1CH23 571Q2

    Untitled

    Abstract: No abstract text available
    Text: HARRIS SEMICOND SECTOR HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRL9130 D, R, H 5flE D • 4302E71 0045776 536 H H A S 2N7308D, 2N7308R 2N7308H Radiation Hardened P-Channel Power MOSFETs December 1992 T '3 f -/f Features


    OCR Scan     		PDF FRL9130 4302E71 2N7308D, 2N7308R 2N7308H -100V, 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: flî h a r f r i s U l S E MI C ON DU CT O R 2N7279D, 2N7279R 2NÎ7279H REGISTRATION PENDING Currently Available as FRS234 D, R, H ^ ^ Radiation Hardened N-Channel Power MOSFETs December 1992 Package Features • 5A, 250V, RDS(0n) = 0.71512 TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF 2N7279D, 2N7279R 7279H O-257AA FRS234 100KRAD 300KRAD 1000KRAD 3000KRAD

    Untitled

    Abstract: No abstract text available
    Text: fil HARRIS S E M I C O N D U C T O R PRELIMINARY REGISTRATION PENDING Currently Available as FRE264 D, R, H 2N7304D, 2N7304R 2N7304H January 1993 Radiation Hardened N-Channel Power MOSFETs Package Features • 23A, 250V, RDS(on) = 0.130Q TO-258 • Second Generation Rad Hard MOSFET Results From New Design Concepts


    OCR Scan     		PDF FRE264 2N7304D, 2N7304R 2N7304H O-258 100KRAD 300KRAD 1000KRAD 3000KRAD

    D4L DIODE

    Abstract: No abstract text available
    Text: HA RR IS S E M I C O N D S E C T O R b3E D SKI h a f r f r i s uu semiconductor • 4 3 Ü 2 27 1 G 0 4 7 b 3 4 1ÜT ■ I H A S 2N7284D, 2N7284R 2N7284H REGISTRATION PENDING Currently Available as FRS140 D, R, H . Radiation Hardened N-Channel Power MOSFETs


    OCR Scan     		PDF 2N7284D, 2N7284R 2N7284H FRS140 O-257AA 100KRAD 300KRAD 1000KRAD 3000KRAD O-257AA D4L DIODE