100V 20A FAST RECOVERY POWER DIODE Search Results

MBRF20100CT

Abstract: JA60 AV-2015
Contextual Info: SEMICONDUCTOR MBRF20100CT TECHNICAL DATA SCHOTTKY BARRIER TYPE DIODE SWITCHING TYPE POWER SUPPLY APPLICATION. CONVERTER & CHOPPER APPLICATION. A P S Average Output Rectified Current B E G : IO=20A. Repetitive Peak Reverse Voltage : VRRM=100V. K Fast Reverse Recovery Time : trr=35ns.

100v 20a fast recovery power diode

Abstract: Power MOSFET 50V 20A MOSFET 40A 100V 100v 20a mosfet N_CHANNEL MOSFET 100V MOSFET
Contextual Info: LTP40N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. Application BVDSS=100V , • DC to DC converter

Power MOSFET 50V 20A

Abstract: 100V, 200 A MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 40A 100V
Contextual Info: LTD35N10 N-Channel 100V Power MOSFET Features: • Avalanche energy specified • Diode is characterized for use in bridge circuits •Source to Drain diode recovery time comparable to a discrete fast recovery diode. • Pb-free lead planting ; RoHS compliant

byv32

Abstract: 10A, 100v fast recovery diode power Diode 200V 10A anode common fast recovery diode dual BYV32-200TMF 2A Fast Recovery Diodes DUAL DIODES COMMON ANODE TO220 to-276ab common anode fast to220 fast rectifier common anode
Contextual Info: BYV32–50M0 BYV32–100M BYV32–150M BYV32–200M MECHANICAL DATA Dimensions in mm 4.6 0.8 0 .7 6 0 .0 3 0 m in . 1 0 .6 1 3 .5 16.5 3.6 Dia. 0 .8 9 (0 .0 3 5 ) m in . 3 .7 0 (0 .1 4 6 ) 3 .4 1 (0 .1 3 4 ) 1 1 3 .7 0 3 .6 0 (0 .1 4 2 ) M a x . 3 1 0 .6 9 (0 .4 2 1 )

Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For Switching Power Supplies, Inverters And As

Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As

Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As

BYV32-200

Abstract: 100v 20a fast recovery power diode
Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As

Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For Switching Power Supplies, Inverters And As

100SMD

Abstract: BYV32-SMD BYV32
Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50SMD BYV32-150SMD BYV32-100SMD BYV32-200SMD • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic Ceramic Surface Mount Package. • Ideally Suited For Switching Power Supplies, Inverters And As

Contextual Info: DUAL FAST RECOVERY RECTIFIER DIODE BYV32-50M BYV32-150M BYV32-100M BYV32-200M • Very Low Reverse Recovery Time – trr <35ns. • Voltage Range 50V To 200V. • Hermetic TO220 TO-257AB Isolated Metal Package. • Ideally Suited For Switching Power Supplies, Inverters And As

GTO thyristor 1200V 50A

Abstract: scr driving circuit for dc motor MOSFET circuit welding INVERTER SCR Gate Drive 200v dc motor MOSFET welding INVERTER MOSFET welding INVERTER 200A igbt for HIGH POWER induction heating 600V igbt dc to dc buck converter SWITCHING WELDING BY MOSFET igbt circuit for induction melting
Contextual Info: POWEREX 2009:Layout 1 12/31/08 9:18 AM Page 2 Power Semiconductor Solutions 2009 Quick Reference Guide ● IGBTs ● MOSFET MODULES ● IPMs ● ● DIPIPM ● ● ● ACCESSORIES ● DISCRETE THYRISTORS ● DISCRETE RECTIFIERS ● THYRISTOR AND DIODE MODULES

k07n120

Abstract: Q67040-S4280 PG-TO-247-3 SKW07N120
Contextual Info: SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • Lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

K25N120

Abstract: Q67040-S4282
Contextual Info: SKW25N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode • 40lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter G - SMPS • NPT-Technology offers:

Contextual Info: BY 233-200 →600 FAST RECOVERY RECTIFIER DIODES LOW SWITCHING LOSSES LOW PEAK RECOVERY CURRENT IRM THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS Cathode connected to case APPLICATIONS MOTOR CONT RO LS FREE-WHEELING

fast recovery diode 1200V 100ns

Abstract: Q67040-S4281 SKW15N120
Contextual Info: Preliminary SKW15N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

HUR1630CT

Contextual Info: HUR1630CT High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode A C A Dimensions TO-220AB A C A C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR1630CT Symbol VRRM V 300 Test Conditions IFRMS IFAVM TC=130oC; rectangular, d=0.5 IFSM

Contextual Info: BY 233-200 →600 FAST RECOVERY RECTIFIER DIODES LOW SWITCHING LOSSES LOW PEAK RECOVERY CURRENT IRM THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS Cathode connected to case APPLICATIONS MOTOR CONTROLS FREE-WHEELING

BY 233-600

Contextual Info: BY 233-600  FAST RECOVERY RECTIFIER DIODES LOW SWITCHING LOSSES LOW PEAK RECOVERY CURRENT IRM THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr ANDIRM AT100°C UNDER USERS CONDITIONS Cathode connected to case APPLICATIONS MOTOR CONTROLS FREE-WHEELING

SKW07N120

Contextual Info: Preliminary SKW07N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

fast recovery diode 1200V 100ns

Abstract: SKW25N120 100w smps
Contextual Info: Preliminary SKW25N120 Fast S-IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode C • 40% lower Eoff compared to previous generation • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter - SMPS • NPT-Technology offers:

BY 233-600

Contextual Info: BY 233-600 FAST RECOVERY RECTIFIER DIODES LOW SWITCHING LOSSES LOW PEAK RECOVERY CURRENT IRM THE SPECIFICATIONS AND CURVES ENABLE THE DETERMINATION OF trr AND IRM AT 100°C UNDER USERS CONDITIONS Cathode connected to case APPLICATIONS MOTOR CONTROLS FREE-WHEELING

HUR830

Contextual Info: HUR830 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 300 HUR830 Symbol VRRM V 300 Test Conditions Dim. A B C D E F G H J K L M N Q Inches Min. Max. 0.500 0.580

600v 10A ultra fast recovery diode

Abstract: HUR10100 HUR10120
Contextual Info: HUR10100, HUR10120 High-Performance Wide Temperature Range Ultra Fast Recovery Epitaxial Diode Dimensions TO-220AC A C A C C TAB A=Anode, C=Cathode, TAB=Cathode VRSM V 1000 1200 HUR10100 HUR10120 Symbol VRRM V 1000 1200 Test Conditions Dim. A B C D E F G