100V 23A P-CHANNEL MOSFET Search Results

100v 23A P-Channel MOSFET

Contextual Info: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

Rad Hard in Fairchild for MOSFET

Contextual Info: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs December 2001 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot

Contextual Info: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rD S 0 N = 0.140S1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts G • Gamma • Gamma Dot

100v 23A P-Channel MOSFET

Abstract: Rad Hard in Fairchild for MOSFET FRF9150R 17 17751 21 2E12 FRF9150D FRF9150H FRF9150
Contextual Info: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

100v 23A P-Channel MOSFET

Abstract: 2E12 FRF9150D FRF9150H FRF9150R
Contextual Info: FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, rDS ON = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

sm69a

Abstract: 86 diode Rad hard MOSFETS in Harris S 170 TRANSISTOR
Contextual Info: Semiconductor FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 23A, -100V, r D S 0 N = 0.140S2 TO-254AA • Second Generation Rad Hard M OSFET Results From New Design Concepts • G am m a

FRF9150H

Abstract: power mosfet p channel rad hard rds
Contextual Info: Q3 HARRIS S E M I C O N D U C T O R FRF9150D, FRF9150R, FRF9150H 23A, -100V, 0.140 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 23A, -100V, rp S {O N = 0.140Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT23P09 Preliminary POWER MOSFET -23A, -100V P-CHANNEL POWER MOSFET „ DESCRIPTION The UTC UT23P09 is a P-channel Power MOSFET, it uses UTC’s advanced technology to provide the customers with high switching speed and a minimum on-state resistance.

Contextual Info: AP25N10GS/P-HF Halogen-Free Product Advanced Power Electronics Corp. N-CHANNEL ENHANCEMENT MODE POWER MOSFET Low Gate Charge BVDSS D 100V RDS ON Simple Drive Requirement Fast Switching Characteristic ID G RoHS Compliant & Halogen-Free 80m 23A S Description

100v 23A P-Channel MOSFET

Abstract: IRFI5210 IRF5210 of what package type b 1370
Contextual Info: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A

IRFI5210

Abstract: IRF5210
Contextual Info: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A

b 1370

Abstract: IRFI5210
Contextual Info: PD - 9.1404A IRFI5210 PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS … Sink to Lead Creepage Dist. = 4.8mm P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.06Ω G ID = -23A

IRF9540N

Abstract: datasheet of irf9540n IRF9540n datasheet 7A, 100v fast recovery diode irf9540n to220ab ir D 92 M - 02 DIODE
Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

IRFP9140N

Abstract: SEC IRF9540N
Contextual Info: PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

IRF9540N

Abstract: 100v 23A P-Channel MOSFET SEC IRF9540N datasheet of irf9540n IRF9540n datasheet irf9540n to220ab ir
Contextual Info: PD - 91437B IRF9540N HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching P-Channel Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

Contextual Info: PD - 9.1492A IRFP9140N PRELIMINARY HEXFET Power MOSFET l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated D VDSS = -100V RDS on = 0.117Ω G ID = -23A S Description Fifth Generation HEXFETs from International Rectifier

irfp9140npbf

Abstract: IRF9540N
Contextual Info: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier

4.5V TO 100V INPUT REGULATOR

Contextual Info: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier

irfp9140npbf

Abstract: 4.5V TO 100V INPUT REGULATOR
Contextual Info: PD - 95665 IRFP9140NPbF l l l l l l l Advanced Process Technology Dynamic dv/dt Rating 175°C Operating Temperature P-Channel Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = -100V RDS on = 0.117Ω G Description ID = -23A S Fifth Generation HEXFETs from International Rectifier

DIODE 1334 LM

Abstract: 2N7323R 2E12 2N7323D 2N7323H Rad hard for Harris Rad hard MOSFETS in Harris 2N7323
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs March 1996 Features Package • 23A, -100V, rDS(ON) = 0.140Ω TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: 2N7323D, 2N7323R 2N7323H H a r r is S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H Radiation Hardened P-Channel Power MOSFETs March 1996 Package Features • 23A, -100V, Tos(ON) = 0.140& TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

2N7323

Contextual Info: m l- L A J R F R IS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRF9150 D, R, H 2N7323D, 2N7323R 2N7323H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • 23A, -100V, ROS(on) « 0.140Q TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: f f i h a r r is U U S E M I C O N D U C T O R FRF250D, FRF250R, F fí F2S0H 23A, 200V, 0.115 Ohm, Rad Hard, N-Channel Power MOSFETs June 1998 Features Package • 23A, 200V, RDS on = 0.115£1 TO-254AA • Second Generation Rad Hard MOSFET Results From New Design Concepts