100V 28A Search Results

IRF540G

Abstract: Application Note of IRF540 IRF540 T1 IRF540 RF1S540SM RF1S540SM9A
Contextual Info: IRF540, RF1S540SM Data Sheet 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil Corporation, NChannel Power MOSFETs, TO220AB , TO263AB ) /Creator ()

p40nf10

Abstract: STD40NF10 D40NF JESD97 STP40NF10 TF415
Contextual Info: STD40NF10 STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 / DPAK Low gate charge STripFET II Power MOSFET Features Type VDSS RDS on Max ID STD40NF10 100V <0.028Ω 50A STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge ■

TA17421

Abstract: IRF140 datasheet IRF140 IRF140 INTERSIL
Contextual Info: IRF140 Data Sheet March 1999 28A, 100V, 0.077 Ohm, N-Channel Power MOSFET • 28A, 100V Formerly developmental type TA17421. • rDS ON = 0.077Ω • Single Pulse Avalanche Energy Rated • SOA is Power-Dissipation Limited • Nanosecond Switching Speeds

IRF140

Abstract: irf140 ir IRF1401
Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

Contextual Info: PD - 90369 IRF140 100V, N-CHANNEL REPETITIVE AVALANCHE AND dv/dt RATED  HEXFET TRANSISTORS THRU-HOLE TO-204AA/AE Product Summary Part Number IRF140 BVDSS 100V RDS(on) 0.077Ω ID 28A The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors.

IRF140

Abstract: IRF141 IRF143 IRF142 to204ae IRF140 HARRIS IRF140 ir
Contextual Info: IRF140, IRF141, IRF142, IRF143 h a r r is SEM C0NDUCT0R 28A and 25A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs Juiy 1998 Features Description • 28A and 25A, 80V and 100V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF540 mosfet with maximum VDS 12v

Abstract: IRF540 Applications Note of IRF540 MOSFET IRF540 TA17421 IRF540 mosfet irf540 pdf switch irf541 IRF542 IRF543
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM Semiconductor 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

IRF541

Abstract: IRF540 mosfet with maximum VDS 12v IRF5402 IRF540 T1 IRF540 IRF542 IRF543 IRF540 mosfet with maximum VDS 30 V RF1S540 RF1S540SM
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Features Description • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate

IRF540

Abstract: Applications Note of IRF540 irf541 RF1S540SM9A RF1S540SM IRF542 IRF543 irf540 be IRF540 Rg RF1S540
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM HARRIS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features • 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate

Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rQs^oN = 0.055i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Rad Hard in Fairchild for MOSFET

Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

IRF540G

Abstract: IRF540 mosfet with maximum VDS 30 V IRF540 T1 IRF540 RF1S540 RF1S540SM RF1S540SM9A Applications Note of IRF540
Contextual Info: NS ESIG D W R NE UCT D FO E PROD E D N T MME BSTITU U ECOSheet S N R Data E T 4 NO SIBL IRF5 POS 28A, 100V, 0.077 Ohm, N-Channel Power MOSFETs [ /Title IRF54 0, RF1S5 40SM /Subject (28A, 100V, 0.077 Ohm, NChannel Power MOSFETs) /Autho r () /Keywords (Intersil

IRF540

Abstract: T1 IRF540 IRF542 IRF541 IRF543 RF1S540 RF1S540SM IRF540 harris Applications Note of IRF540 IRF540 MOSFET
Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM S E M I C O N D U C T O R 25A and 28A, 80V and 100V 0.077Ω and 0.100Ω N-Channel Power MOSFETs March 1996 Features Packages JEDEC TO-220AB • 25A and 28A, 80V and 100V SOURCE DRAIN GATE • rDS ON = 0.077Ω and 0.100Ω

Contextual Info: IRF540, IRF541, IRF542, IRF543, RF1S540, RF1S540SM H A F R F R IS S E M I C O N D U C T O R 25A and 28A, 80V and 100V, 0.077 and 0.100 Ohm, N-Channel Power MOSFETs November 1997 Description Features 25A and 28A, 80V and 100V These are N-Channel enhancement mode silicon gate

P40NF10

Abstract: JESD97 STP40NF10 p40nf
Contextual Info: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization

IRF5M3710

Abstract: isd 1740 4.5v to 100v input regulator
Contextual Info: PD - 94234 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3710 100V RDS(on) 0.03Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

IRF5N3710

Abstract: 4.5v to 100v input regulator
Contextual Info: PD - 94235A HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRF5N3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5N3710 100V RDS(on) 0.028Ω ID 45A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

p40nf10

Contextual Info: STP40NF10 N-channel 100V - 0.025Ω - 50A TO-220 Low gate charge STripFET II Power MOSFET General features Type VDSS RDS on ID STP40NF10 100V <0.028Ω 50A • Exceptional dv/dt capability ■ Low gate charge at 100°C 3 ■ Application oriented characterization

Contextual Info: PD - 94234 HEXFET POWER MOSFET THRU-HOLE TO-254AA IRF5M3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5M3710 100V RDS(on) 0.03Ω ID 35A* Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

BUZ21

Abstract: TA9854 TB334
Contextual Info: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as

Contextual Info: PD - 94235A HEXFET POWER MOSFET SURFACE MOUNT SMD-1 IRF5N3710 100V, N-CHANNEL Product Summary Part Number BVDSS IRF5N3710 100V RDS(on) 0.028Ω ID 45A Fifth Generation HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance

2E12

Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

VOLTAGE LEVEL RELAY SM 125 230

Contextual Info: u FSJ9160D, FSJ9160R H a r r is .«»,co.ucTo» 44A, -100V, 0.055 Ohm, Rad Harel, SEGR Resistant, P-Channel Power MOSFETs Ju ne 1 998 Features Description • 44A, -100V, rDS 0 N = 0.055£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSJ9160D FSJ9160D1 FSJ9160D3 FSJ9160R FSJ9160R1
Contextual Info: FSJ9160D, FSJ9160R 44A, -100V, 0.055 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 44A, -100V, rDS ON = 0.055Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event