100V 35A IGBT Search Results

IRGPC50MD2

Contextual Info: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes

IGBT 500V 35A

Abstract: IGBT 600V 35A 600V 25A Ultrafast Diode IRGPC50MD2
Contextual Info: PD - 9.1145 IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features Short Circuit Rated Fast CoPack IGBT C • Short circuit rated -10µs @125°C, VGE = 15V • Switching-loss rating includes all "tail" losses • HEXFREDTM soft ultrafast diodes

transistor* igbt 70A 300 V

Abstract: 70A 1200V IGBTS Rectifier, 70A, 1000V Super-247 Package irg4psh71udp IRFPS37N50A diode 70A
Contextual Info: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching

c331 transistor

Contextual Info: international ri“ HlRectifier P D -9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V qe = 15V • Switching-ioss rating includes all 'tail" losses • Optimized for medium operating frequency 1 to

IGBT 500V 35A

Abstract: diode C407 C408 diode CPU165MM IGBT tail time
Contextual Info: Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses TM

Contextual Info: PD - 95908 IRG4PSH71UDPbF INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE UltraFast Copack IGBT Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching

transistor c331

Abstract: c331 transistor transistor c332 transistor c333 IGBT 500V 35A 1RGPC50M package transistor c331
Contextual Info: P D - 9.1024 htemational Rectifier IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Short Circuit Rated Fast IGBT Features • Short circuit rated - 10ps @ 125°C, V g e = 15V • Switching-loss rating includes all "tail” losses • Optimized for medium operating frequency 1 to

Contextual Info: htemational Preliminary Data Sheet PD - 5.030 [^Rectifier CPU165MM Short Circuit Rated Fast IGBT IGBT SIP MODULE Features • Short Circuit Rated - 10ps @ 125°C, V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all “tail" losses

IGBT 500V 35A

Abstract: diode C407 IGBT tail time C408 diode transistor C408 c407 diode 600V 25A Ultrafast Diode DATA SHEET OF IGBT CPU165MM
Contextual Info: Previous Datasheet Index Next Data Sheet Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 10µs @ 125°C, V GE = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

IGBT 500V 35A

Abstract: CPU165MM 100V 35A igbt
Contextual Info: International 1*»]Rectifier Preliminary Data Sheet PD - 5.030 CPU165MM IGBT SIP MODULE Short Circuit Rated Fast IGBT Features • Short Circuit Rated - 1 0ps @ 125°C, V qe = 15V Fully isolated printed circuit board mount package • Switching-loss rating includes all "tail" losses

IRG4PSH71UD

Abstract: IRG4P IRF 547 MOSFET IRFPS37N50A MOSFET 1000V 140A TO274
Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

Contextual Info: PD - 91686 IRG4PSH71UD INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • UltraFast switching speed optimized for operating frequencies 8 to 40kHz in hard switching, 200kHz in resonant mode soft switching • Generation 4 IGBT design provides tighter

IRF3710ZPBF

Abstract: IRF3710Z IRF3710ZL IRF3710ZS AN-994 IRF3710ZL marking IRF3710ZLPBF IRF3710ZSPBF
Contextual Info: PD - 95466 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF AUTOMOTIVE MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

C405 transistor

Abstract: mv C405 C404 Transistor mv c402 IGBT 500V 35A IRGPC50MD2
Contextual Info: International lü ] Rectifier PD - 9.1145A IRGPC50MD2 Short Circuit Rated Fast CoPack IGBT INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Features • • • • V ces = 600V Short circuit rated -1 0 jjs @125°C, Vqe = 15V Switching-loss rating includes all "tail” losses

transistor c331

Abstract: c331 transistor IRGPC50M C329 transistor c332
Contextual Info: PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency

transistor c331

Abstract: C 331 Transistor c331 transistor transistor c 331 IRGPC50M IGBT 500V 35A c331 ses
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to

transistor c331

Abstract: c331 transistor ic901 IRGPC50M IGBT 500V 35A c331 ses
Contextual Info: PD - 9.1024 IRGPC50M INSULATED GATE BIPOLAR TRANSISTOR Features Short Circuit Rated Fast IGBT C • Short circuit rated - 10µs @ 125°C, V GE = 15V • Switching-loss rating includes all "tail" losses • Optimized for medium operating frequency 1 to 10kHz See Fig. 1 for Current vs. Frequency

IRF3710Z

Abstract: IRF3710ZL IRF3710ZS AN-994
Contextual Info: PD - 94632A IRF3710Z IRF3710ZS IRF3710ZL AUTOMOTIVE MOSFET Features O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

94632A

Abstract: IRF3710Z IRF3710ZL IRF3710ZS AN-994
Contextual Info: PD - 94632A IRF3710Z IRF3710ZS IRF3710ZL AUTOMOTIVE MOSFET Features O O O O O O HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

mosfet irf3710z

Contextual Info: PD - 94632A IRF3710Z IRF3710ZS IRF3710ZL AUTOMOTIVE MOSFET Features n n n n n n HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

thyristor 900A

Contextual Info: Technische Information / Technical Information Thyristor-Modul mit Chopper-IGBT Thyristor Module with Chopper-IGBT TD B6HK 124 N 16 RR N Elektrische Eigenschaften / Electrical properties B6 Zieldaten Target data Höchstzulässige Werte / Maximum rated values

IRF3710Z

Abstract: IRF3710ZL IRF3710ZS IRF3710ZPBF AN-994 IRF3710ZL marking IRF3710ZLPBF IRF3710ZSPBF
Contextual Info: PD - 95466 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF AUTOMOTIVE MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IRF3710Z

Abstract: IRF3710ZL IRF3710ZS IRF3710ZPBF AN-994 IRF3710ZLPBF IRF3710ZSPBF
Contextual Info: PD - 95466 IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF AUTOMOTIVE MOSFET Features ● ● ● ● ● ● ● Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax

IC C399

Abstract: IRGPC50MD2 c406 600V 25A Ultrafast Diode NS100
Contextual Info: Previous Datasheet Index Next Data Sheet PD - 9.1145A IRGPC50MD2 INSULATED GATE BIPOLAR TRANSISTOR WITH ULTRAFAST SOFT RECOVERY DIODE Short Circuit Rated Fast CoPack IGBT Features C VCES = 600V • Short circuit rated -10µs @125°C, V GE = 15V • Switching-loss rating includes all "tail" losses