100V H-BRIDGE MOSFET Search Results

Contextual Info: HARRIS H S E M I C O N D U C T O R P 2 1 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver October 1995 Description Features • I Drives N-Channel MOSFET Half Bridge The H IP 2100 is a high frequency, 100V Half Bridge N-Channel M O S F E T driver IC, available in 8 lead plastic

ZXMHC10A07T8

Abstract: ZXMHC10A07T8TC ZXMHC10A07T8TA
Contextual Info: ZXMHC10A07T8 COMPLEMENTARY 100V ENHANCEMENT MODE MOSFET H-BRIDGE SUMMARY N-Channel = V BR DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V(BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

DRV_B

Abstract: 100C
Contextual Info: SENSITRON SEMICONDUCTOR SPM4007010 TECHNICAL DATA Datasheet 5030, Preliminary Dual MOSFET BRIDGE, With Gate Driver DESCRIPTION: A 100 VOLT, 7.5 AMP, DUAL MOSFET BRIDGE A high density Dual H-Bridge capabable of driving 7.5A peak at 100V. This small footprint dual bridge contains low Rdson power FETs , FET drivers and precision

Contextual Info: ZXM HC10A07T8 COM PLEM ENTARY 100V ENHANCEM ENT M ODE M OSFET H-BRIDGE SUM M ARY N-Channel = V BR DSS = 100V : RDS(on) = 0.7 ; ID = 1.4A P-Channel = V (BR)DSS = -100V : RDS(on) = 1.0 ; ID = -1.3A DESCRIPTION This new generation of trench MOSFETs from Zetex utilizes a unique structure that

Contextual Info: A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 100V RDS(on) ID TA= 25°C 0.70Ω @ VGS= 10V 1.0A 0.90Ω @ VGS= 6.0V 0.9A 1.00Ω @ VGS= -10V -0.9A 1.45Ω @ VGS= -6.0V

DEVICE MARKING p1g

Abstract: 10A07 4.5v to 100v input regulator
Contextual Info: A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 100V RDS(on) ID TA= 25°C 0.70Ω @ VGS= 10V 1.0A 0.90Ω @ VGS= 6.0V 0.9A 1.00Ω @ VGS= -10V -0.9A 1.45Ω @ VGS= -6.0V

ZXMHC10A07N8

Abstract: 10A07 4.5v to 100v input regulator
Contextual Info: A Product Line of Diodes Incorporated ZXMHC10A07N8 100V SO8 Complementary enhancement mode MOSFET H-Bridge Summary Device N-CH P-CH V BR DSS QG 100V RDS(on) ID TA= 25°C 0.70Ω @ VGS= 10V 1.0A 0.90Ω @ VGS= 6.0V 0.9A 1.00Ω @ VGS= -10V -0.9A 1.45Ω @ VGS= -6.0V

OM9360SF

Contextual Info: OM9360SF FULL BRIDGE SERVO DRIVER 15A High Efficiency H-Bridge And Driver For Servo Applications FEATURES • • • • • • • 100V Power MOSFETs Output Current Up To 15 Amps TTL Or CMOS Inputs 95% Efficiency Over Temperature Schmitt Trigger Input Up To 100 kHz Operation

Contextual Info: OM9360SF FULL BRIDGE SERVO DRIVER 15A High Efficiency H-Bridge And Driver For Servo Applications FEATURES • • • • • • • 100V Power MOSFETs Output Current Up To 15 Amps TTL Or CMOS Inputs 95% Efficiency Over Temperature Schmitt Trigger Input Up To 100 kHz Operation

complementary MOSFET TO252

Abstract: Mosfet Sot223 ZXMC10A816N8 717 MOSFET mosfet class-d mosfet DPAK SOIC8 package SOT223 package H-bridge DUAL MOSFET
Contextual Info: Issue Number | 001 New Product Announcement Dual MOSFET saves space and improves performance Description Diodes Incorporated has introduced the ZXMC10A816N8 a 100V complementary dual enhancement mode MOSFET targeted at H-bridge circuits in telecoms DC fan, <100W class D

MSK4230

Abstract: 10 amp H-bridge Mosfet stepper
Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. 10 AMP, 70V, H-BRIDGE MOSFET STEPPER MOTOR DRIVE 4707 Dey Road Liverpool, N.Y. 13088 4230 315 701-6751 FEATURES: 70V Maximum Operating Motor Supply Voltage 100V Absolute Maximum Output Stage Rating

MSK4231RH

Contextual Info: MIL-PRF-38534 AND 38535 CERTIFIED FACILITY RAD HARD 10 AMP, 70V, H-BRIDGE MOSFET STEPPER MOTOR DRIVE 4231RH FEATURES: Total Dose Hardened to 100 Krads Si (Method 1019.7 Condition A) 70V Maximum Operating Motor Supply Voltage 100V Absolute Maximum Output Stage Rating

12V 5A rectifier

Contextual Info: PH26560 Series Preliminary POWER HYBRID 15A DUAL 1/2 H-BRIDGE DRIVERS DESCRIPTION FEATURES • 15A Drive Capability • 4 Drivers with Catch Rectifiers • Fast Switching Speeds ton =35nsec @lc =5A, Vcc =30V toff =300nsec @lc =5A, Vcc =30V • 100V Breakdown on

H-bridge Mosfet

Abstract: SPM4M28-10
Contextual Info: SENSITRON SEMICONDUCTOR SPM4M28-10 DATA SHEET, 685, REV. A Hermetic H-Bridge MOSFET Module With Gate Driver 100V, 28A Description: œThis power module is suited for high reliability switching applications such as motion control, UPS systems, induction heating, and DC/DC and DC/AC switch mode power supplies. Both the gate drivers

3000w mosfet circuit

Contextual Info: PULSE WIDTH MODULATION AMPLIFIER SA13 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-100V 30A CONTINUOUS TO 60° C CASE 3 PROTECTION CIRCUITS

Contextual Info: PULSE WIDTH MODULATION AMPLIFIERS SA13 M I C R O T E C H N O L O G Y HTTP://WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE—16-100V 30A CONTINUOUS TO 60° C CASE 3 PROTECTION CIRCUITS

Contextual Info: P U L S E W ID T H M O D U L A T IO N A M P L IF IE R SA13 M I C R O T E C H N O L O G Y H T T P V / WWW.APEXMICROTECH.COM 800 546-APEX (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE— 16-100V 30A CONTINUOUS TO 60° C CASE

3000w power amplifier circuit diagram

Abstract: power amplifier 3000w diagram mosfet amp 3000w flyback 3000w
Contextual Info: P U L S E W ID T H M O D U L A T IO N A M P L IF IE R itpèx SA13 H T T P . / / WWW. APEXMI CROTECH. COM 8 0 0 5 4 6 - AP E X (800) 546-2739 FEATURES • • • • • • • HALF BRIDGE OUTPUT WIDE SUPPLY RANGE— 16- 100V 30A CONTINUOUS TO 60° C CASE

Contextual Info: HIP2106 HARRIS S E M I C O N D U C T O R PRELIMINARY 100V/1A Peak, Low Cost, High Frequency Half Bridge Driver October 1997 Description Features Drives N-Channel MOSFET Half Bridge The HIP2106 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The

Contextual Info: HIP2100 Semiconductor October 1998 Data Sheet 100V/2A Peak, Low Cost, High Frequency Half Bridge Driver The HIP2100 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The low-side and high-side gate drivers are

Contextual Info: fClHARRIS HIP2106 S E M I C O N D U C T O R 100V /1A Peak, Low Cost, High Frequency Half B ridge D river March 1998 Features Description Drives N-Channel MOSFET Half Bridge No Start-Up Problems The HIP2106 is a high frequency, 100V Half Bridge N-Channel MOSFET driver IC, available in 8 lead plastic SOIC. The

Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 100 VOLT MOSFET SMART HIGH TEMP 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4323 315 701-6751 FEATURES: Designed for High Temp Applications 100V, 20 Amp Capability Low Thermal Resistance - Junction to Case - 3.0°C/W (Each MOSFET)

industrial induction heat circuit

Abstract: 4323H 4707 N Channel MOSFETs 20 Amp 100 volt mosfet MSK4323
Contextual Info: MIL-PRF-38534 CERTIFIED M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 100 VOLT MOSFET SMART HIGH TEMP 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4323 315 701-6751 FEATURES: Designed for High Temp Applications 100V, 20 Amp Capability Low Thermal Resistance - Junction to Case - 3.0°C/W (Each MOSFET)

Contextual Info: MIL-PRF-38534 & 38535 CERTIFIED FACILITY M.S.KENNEDY CORP. M.S. KENNEDY CORP. 20 AMP, 100 VOLT MOSFET SMART HIGH TEMP 3-PHASE MOTOR DRIVE HYBRID 4707 Dey Road Liverpool, N.Y. 13088 4323 315 701-6751 FEATURES: Designed for High Temp Applications 100V, 20 Amp Capability