100V P-CHANNEL DPAK Search Results
100V P-CHANNEL DPAK Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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TK5R1P08QM |
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MOSFET, N-ch, 80 V, 84 A, 0.0051 Ohm@10V, DPAK |
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TK6R9P08QM |
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MOSFET, N-ch, 80 V, 62 A, 0.0069 Ohm@10V, DPAK |
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TC7PCI3212MT |
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2 Differential Channel, 2:1 multiplexer/demultiplexer, SPDT, TQFN20, -40 to 85 degC |
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TLP294-4 |
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Photocoupler (phototransistor output), AC input, 3750 Vrms, 4 channel, SO16 |
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100V P-CHANNEL DPAK Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FQD8P10TMContextual Info: FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD8P10TM -100V, | |
Contextual Info: FQD8P10TM_F085 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD8P10TM -100V, | |
FQD12P10TM_F085
Abstract: FQD12P10TM
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FQD12P10TM -100V, FQD12P10TM_F085 | |
Contextual Info: FQD12P10TM_F085 tm 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD12P10TM -100V, | |
Contextual Info: QFET FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD12P10 FQU12P10 -100V, | |
FQD12P10
Abstract: FQU12P10
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FQD12P10 FQU12P10 -100V, FQU12P10 | |
FQD8P10
Abstract: FQU8P10
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FQD8P10 FQU8P10 -100V, FQU8P10 | |
FQD5P10
Abstract: FQU5P10
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FQD5P10 FQU5P10 -100V, FQU5P10 | |
Contextual Info: TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD8P10 FQU8P10 -100V, | |
FQD12P10
Abstract: FQU12P10
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FQD12P10 FQU12P10 -100V, FQU12P10 | |
FQD8P10
Abstract: FQU8P10
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FQD8P10 FQU8P10 -100V, FQU8P10 | |
FQD5P10
Abstract: FQU5P10
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FQD5P10 FQU5P10 -100V, FQU5P10 | |
Contextual Info: QFET FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD5P10 FQU5P10 -100V, FQU5P10 | |
FQD12P10
Abstract: FQU12P10
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FQD12P10 FQU12P10 -100V, FQU12P10 | |
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FQD5P10
Abstract: FQU5P10
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FQD5P10 FQU5P10 -100V, FQU5P10 | |
Contextual Info: FQD5P10 / FQU5P10 August 2000 QFET TM FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD5P10 FQU5P10 -100V, FQU5P10 FQU5P10TU O-251 | |
Contextual Info: FQD12P10 / FQU12P10 August 2000 QFET TM FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD12P10 FQU12P10 -100V, FQD12P10TM FQD12P10TF O-252 | |
Contextual Info: FQD12P10 / FQU12P10 August 2000 QFET TM FQD12P10 / FQU12P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD12P10 FQU12P10 -100V, FQU12P10 FQU12P10TU O-251 | |
FQU8P10TUContextual Info: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD8P10 FQU8P10 -100V, FQU8P10 FQU8P10TU O-251 FQU8P10TU | |
Contextual Info: FQD8P10 / FQU8P10 August 2000 QFET TM FQD8P10 / FQU8P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD8P10 FQU8P10 -100V, FQD8P10TM FQD8P10TF O-252 | |
FQD5P10TMContextual Info: FQD5P10 / FQU5P10 August 2000 QFET TM FQD5P10 / FQU5P10 100V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to |
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FQD5P10 FQU5P10 -100V, FQD5P10TM FQD5P10TF O-252 | |
Contextual Info: KSMD12P10 / KSMU12P10 100V P-Channel MOSFET TO-252 TO-251 Features • • • • • • • -9.4A, -100V, RDS on = 0.29Ω @VGS = -10 V Low gate charge ( typical 21 nC) Low Crss ( typical 65 pF) Fast switching 100% avalanche tested Improved dv/dt capability |
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KSMD12P10 KSMU12P10 O-252 O-251 -100V, | |
10A17
Abstract: J-STD-020D ZXMP 10A17
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ZXMP10A17K -100V 10A17 J-STD-020D ZXMP 10A17 | |
2SJ series
Abstract: TO252 TO-252 2sk2981 2SK3113 equivalent 2SK2414-Z 2sk2414 2sk2415 2SK1282 2Sj325
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2SK2981-Z 2SK2982-Z 2SK1282-Z 2SK2415-Z 2SK2414-Z 2SK1284-Z 2SJ324-Z 2SJ325-Z 2SJ326-Z 2SJ327-Z 2SJ series TO252 TO-252 2sk2981 2SK3113 equivalent 2sk2414 2sk2415 2SK1282 2Sj325 |