101 SMD DIODE Search Results

Contextual Info: BZG05C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 3.3 V to 100 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-101 qualified • Compliant to RoHS Directive 2002/95/EC and in

DO-214AC vishay

Abstract: BZG05C68
Contextual Info: BZG05C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 3.3 V to 100 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-101 qualified • Compliant to RoHS Directive 2002/95/EC and in

Contextual Info: BZG05C-Series www.vishay.com Vishay Semiconductors Zener Diodes FEATURES • High reliability • Voltage range 3.3 V to 100 V • Fits onto 5 mm SMD footpads • Wave and reflow solderable • AEC-101 qualified • Compliant to RoHS Directive 2002/95/EC and in

SMD codes databook

Contextual Info: BZG05C-Series Vishay Semiconductors Zener Diodes Features • • • • • • High reliability Voltage range 3.3 V to 100 V Fits onto 5 mm SMD footpads Wave and reflow solderable AEC-101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Contextual Info: BZG05C-Series Vishay Semiconductors Zener Diodes Features • • • • • • High reliability Voltage range 3.3 V to 100 V Fits onto 5 mm SMD footpads Wave and reflow solderable AEC-101 qualified Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC

Contextual Info: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dv/df rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type Vds BUZ101 50 V 29 A flbSfon Package Ordering Code

7C SMD TRANSISTOR

Contextual Info: SIEMENS BUZ 101 SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • dWdt rated • Low on-resistance • 175°C operating temperature • also in TO-220 SMD available Type BUZ101 Vbs 50 V b ^>S on Package Ordering Code 29 A

smd transistor marking z8

Abstract: 771-2N7002BKM315
Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

smd transistor marking z8

Abstract: MOSFET TRANSISTOR SMD MARKING CODE A1 2N7002BKM SC-101 transistor smd code marking nc
Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET TRANSISTOR SMD MARKING CODE ZA

Abstract: smd code marking HD smd diode marking a1 BSS84AKM
Contextual Info: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: 2N7002BKM 60 V, 450 mA N-channel Trench MOSFET Rev. 1 — 25 October 2010 Product data sheet BOTTOM VIEW 1. Product profile 1.1 General description N-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

MOSFET TRANSISTOR SMD MARKING CODE ZA

Abstract: SC-101
Contextual Info: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

Contextual Info: SO T8 83 BSS84AKM 50 V, 230 mA P-channel Trench MOSFET Rev. 1 — 23 May 2011 Product data sheet 1. Product profile 1.1 General description P-channel enhancement mode Field-Effect Transistor FET in a leadless ultra small SOT883 (SC-101) Surface-Mounted Device (SMD) plastic package using Trench

Q67040-S4012-A2

Abstract: SPP20N05L sl diode
Contextual Info: BUZ 101 SL SPP20N05L SIPMOS Power Transistor • N channel • Enhancement mode • Logic Level • Avalanche-rated • dv /dt rated • 175°C operating temperature • also in SMD available Pin 1 Pin 2 G Pin 3 D S Type VDS ID RDS on Package Ordering Code

diode sy 171

Abstract: smd diode marking sG sy 171 smd diode marking LM WU-M-266 smd marking SG
Contextual Info: A New Lighting Experience • extremely flexible line module with SMD LED • available in different colours • low mounting height • low heat development LEDLine Flex SMD WU-M-266 • self-adhesive rear side • lead-free soldered • integrated ESD-protection-diode

SMD LED holders

Abstract: WU-M-359-W SMD led warm white WU-M-359
Contextual Info: A New Lighting Experience • extremely flexible line module with SMD LED • low mounting height • self-adhesive rear side • lead-free soldered LEDLine Flex SMD High Brightness WU-M-359 LEDLine Flex SMD High Brightness_W GB 1/4 March, 2009 • integrated ESD-protection-diode

diode sy 171

Abstract: smd marking sy sy 171 smd diode marking sG WU-M-266
Contextual Info: A New Lighting Experience • extremely flexible line module with SMD LED • available in different colours • low mounting height • low heat development LEDLine Flex SMD WU-M-266 • self-adhesive rear side • lead-free soldered • integrated ESD-protection-diode

diode sy 171

Abstract: 260 9918 smd diode marking sG WU-M-266
Contextual Info: A New Lighting Experience • extremely flexible line module with SMD LED • available in different colours • low mounting height • low heat development LEDLine Flex SMD WU-M-266 • self-adhesive rear side • lead-free soldered • integrated ESD-protection-diode

SMD TRANSISTOR MARKING 5c

Abstract: smd transistor 5c TRANSISTOR SMD MARKING CODE 5c TRANSISTOR SMD MARKING CODE 3f transistor smd code marking 101 transistor smd code marking 102 TRANSISTOR SMD MARKING CODE 3G 5c smd transistor TRANSISTOR SMD MARKING CODE 3L SMD TRANSISTOR MARKING 3B
Contextual Info: COMCHIP Small Signal Transistor SMD Diodes Specialist BC856AW-G Thru. BC858CW-G PNP RoHS Device Features -Ideally suited for automatic insertion -For Switching and AF Amplifier Applications -Power dissipation PCM: 0.15W (@TA=25 OC) -Collector current ICM: -0.1A

NTC 5R1

Abstract: IRF32N50 smd diode 600v 1a
Contextual Info: AC Motor Drive Table of Contents AC INPUT, Diode Bridges. 3 AC INPUT, Power Factor

IRF32N50k

Abstract: smd diode UF IRF32N50
Contextual Info: Uninterruptible Power Supply Table of Contents AC INPUT SECTION, Diode Bridge. 3 AC INPUT SECTION, Power Factor

SMD diode f9

Abstract: D09G60C
Contextual Info: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 15 nC • Temperature independent switching behavior IF; TC< 130 °C

Contextual Info: IDD05SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide VDC 600 V • No reverse recovery / No forward recovery QC 6 nC • Temperature independent switching behavior IF; TC< 130 °C

SMD diode f9

Abstract: smd diode marking UJ D09G60C IDD09SG60C JESD22
Contextual Info: IDD09SG60C 3rd Generation thinQ!TM SiC Schottky Diode Features Product Summary • Revolutionary semiconductor material - Silicon Carbide • Switching behavior benchmark • No reverse recovery / No forward recovery • Temperature independent switching behavior