FUSE 500mA fast 5x20mm
Abstract: Tenma TRANSISTOR REPLACEMENT GUIDE
Text: Model 72-1015 OPERATING MANUAL Model 72-1015: OPERATING MANUAL TABLE OF CONTENTS TITLE Overview Inspection Safety Information Rules For Safe Operation International Electrical Symbols The Meter Structure Rotary Switch Functional Buttons Display Symbols Measurement Operation
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RS232C
FUSE 500mA fast 5x20mm
Tenma
TRANSISTOR REPLACEMENT GUIDE
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1015 TRANSISTOR DATASHEET
Abstract: transistor 1015 transistor a 1015 1015 TRANSISTOR
Text: 1015 MP 15 Watt, 50 Volts, Class C Avionics 1025 - 1150 MHz GENERAL DESCRIPTION The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes
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25oC2
1015 TRANSISTOR DATASHEET
transistor 1015
transistor a 1015
1015 TRANSISTOR
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STR 6454
Abstract: str f 6454 str G 5551 47 datasheet str f 6454 str g 5551 3573 1231 str 6454 datasheet LT 7229 LA 4636 str 6353
Text: HP Components Authorized Distributor and Representative Directory Alabama Allied Electronics 1-800-433-5700 California Allied Electronics 1-800-433-5700 Arrow Electronics 1015 Henderson Rd. Huntsville 35816 205 837-6955 Arrow Electronics 26677 W. Agoura Rd.
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441-97ingdom
5965-7668E
5966-1166E
STR 6454
str f 6454
str G 5551 47
datasheet str f 6454
str g 5551
3573 1231
str 6454 datasheet
LT 7229
LA 4636
str 6353
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BAT54S
Abstract: DFLS220L LT1946 LT3489 SD25-2R2
Text: advertisement Drive Large TFT-LCD Displays with a Space-Saving Triple-Output Regulator – Design Note 1015 Jesus Rosales Introduction The power appetite of large TFT-LCDs appears to be insatiable. Power supplies must feed increasing numbers of transistors and improved display resolutions, and do
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LT3489,
600mA
DFLS220L
LT3489
100nF
400mA
CDRH4D28-2R0
DN1015
400mA
900mA
BAT54S
DFLS220L
LT1946
LT3489
SD25-2R2
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str 6353
Abstract: str 6454 str w 6353 str f 6454 Commander CV 150 74146 Alexander Hamilton 3573 1231 ME20 str G 5551 47
Text: HP Components Authorized Distributor and Representative Directory Alabama Allied Electronics 1-800-433-5700 California Allied Electronics 1-800-433-5700 Arrow Electronics 1015 Henderson Rd. Huntsville 35816 205 837-6955 Arrow Electronics 26677 W. Agoura Rd.
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telephone circuit with dtmf tp5088
Abstract: mm58167a TP5088 74510 74vhc942 mm58167 74HC 74VHC943 C1995 MM74HC942
Text: National Semiconductor Application Note 1015 October 1995 When mated with a handful of CMOS peripheral ICs a single-chip CMOS modem device allows you to configure simple inexpensive microprocessor-telephone interface systems with autodial and autoanswer capabilities
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74VHC943
Bell103
74VHC942
MM74HC942
telephone circuit with dtmf tp5088
mm58167a
TP5088
74510
mm58167
74HC
C1995
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1015MP
Abstract: No abstract text available
Text: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems up to 1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for broadband capability.
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1015MP
25oC2
150oC
200oC
1015MP
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siemens modem gsm tc35
Abstract: siemens tc35 9pin D type rs485 pin configuration 9pin D type rs485 configuration Dupline 3800 MAN G 3800 0015 ENG modbus-rtu Dupline siemens modem gsm tc35 driver tc35 gsm modbus Carlo gavazzi dcf77
Text: Du line Master Channel Generator Types G 3800 0015, G 3800 1015 Fieldbus Installationbus • Programmable channel generator • Option for built-in GSM Modem for monitoring and control via SMS • User-friendly configuration via Windows 98/2000/NT/XP software
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98/2000/NT/XP
RS232
RS485
RS232
38xx15
siemens modem gsm tc35
siemens tc35
9pin D type rs485 pin configuration
9pin D type rs485 configuration
Dupline 3800
MAN G 3800 0015 ENG
modbus-rtu Dupline
siemens modem gsm tc35 driver
tc35 gsm
modbus Carlo gavazzi dcf77
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Untitled
Abstract: No abstract text available
Text: 1763-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V)110 I(C) Max. (A)25 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)20m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq40M
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Untitled
Abstract: No abstract text available
Text: 1401-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100ö V(BR)CBO (V) I(C) Max. (A)250 Absolute Max. Power Diss. (W)625 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq500k
req500k
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1015 TRANSISTOR DATASHEET
Abstract: 1015MP transistor 1015 55FW-1 DF pk 1015 TRANSISTOR
Text: 1015MP 15 Watts, 50 Volts Avionics 1025 - 1150 MHz GENERAL DESCRIPTION CASE OUTLINE 55FW-1 The 1015 MP is a COMMON BASE bipolar transistor. It is designed for pulsed systems in the frequency band 1025-1150 MHz. The device has gold thin-film metallization for proven highest MTTF. The transistor includes input prematch for
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1015MP
55FW-1
25oC2
1015 TRANSISTOR DATASHEET
1015MP
transistor 1015
55FW-1
DF pk
1015 TRANSISTOR
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Untitled
Abstract: No abstract text available
Text: 1582-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Untitled
Abstract: No abstract text available
Text: 1561-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Freq800k
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Untitled
Abstract: No abstract text available
Text: SYMBOLS FOR SIMPLE ELECTRICAL CIRCUITS + Voltage Source Current Source es es appears in the circuit for i is is supplied to the circuit for all v DECIMAL FACTOR PREFIXES FACTOR PREFIX SYMBOL 1018 1015 1012 109 106 103 102 101 exa peta tera giga mega E P T
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transistor 1015
Abstract: 2SA1015 A035BJ-01 2SA1015H1015 H1015
Text: PNP 汕头华汕电子器件有限公司 SILICON TRANSISTOR 1015 晶体管芯片说明书 █ 芯片简介 █ 管芯示意图 芯片尺寸:4 英寸(100mm) 芯片代码:A035BJ-01 芯片厚度:240±20µm 管芯尺寸:350x350µm 2 焊位尺寸:B 极 12150µm 2,E 极 16180µm 2
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100mm
A035BJ-01
2SA1015H1015
400mW
-150mA
-50VIE
-100mA
transistor 1015
2SA1015
A035BJ-01
2SA1015H1015
H1015
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Untitled
Abstract: No abstract text available
Text: TO-126 Plastic-Encapsulate Transistors MJE13003 TRANSISTOR NPN TO-126 FEATURES Power dissipation 1.25 PCM: W (Tamb=25℃) 1. BASE Collector current 1.5 A ICM: Collector-base voltage 700 V V(BR)CBO: Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃
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O-126
MJE13003
O-126
1000mA
1000mA,
250mA
100mA
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Untitled
Abstract: No abstract text available
Text: INTEGRATED CIRCUITS a j S H E E T UMA 1015 M Low-power dual frequency synthesizer for radio communications Product specification Supersedes data of October 1994 File under Integrated Circuits, IC03 Philips Sem iconductors 1995 Jun 22 PHILIPS Philips Semiconductors
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SCD40
500/03/pp24
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KTA1015
Abstract: Transistor GR 1815 GR 1815 c 1815 gr transistor C 1815 KTA1015 transistor C 1815 transistor kta10 KTA1015 0 ktc1815
Text: SILICON PNP TRANSISTOR EPITAXIAL PLANAR TYPE PCT PROCESS KT A 1015 ( A P P L IC A T IO N S ) • Low Frequency Amplifier ■ Low Noise Amplifier Ç FEATU RES ) • Low Noise, N F = ldB (Typ.), lOdB (Max.) • Excellent hFE Linearity, hFE(O.lmA) /h FE (2mA) =0.95 (Typ.)
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KTA1015
-150mA
100mA,
-100mA,
-10mA
30MHz
Rg-10kn,
KTA1015
Transistor GR 1815
GR 1815
c 1815 gr
transistor C 1815
KTA1015 transistor
C 1815 transistor
kta10
KTA1015 0
ktc1815
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TRANSISTOR D 471
Abstract: 25CC M135 M140 SD1015 arco 463
Text: f H llr l/ lf f t mraj-M » f §I Progresa Powered by Technology 140 Commerce Drive n • i w i v/ Montgomeryville, ■PA 18936-1013 Tel: 215 631-9840 i i i v / i i i u v i 1 1 \#i y V m u . A M . _ SD 1015 RF & MICROWAVE TRANSISTORS 108-152MHz APPLICATIONS
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108-152MHz
150MHz
SD1015
SD1015
SUUS140
10OOpF
TRANSISTOR D 471
25CC
M135
M140
arco 463
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SERVICE-MITTEILUNGEN
Abstract: funkschau VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEHEN "service-mitteilungen" ASZ1015 stassfurt luxomat scans-048 stroboskop Servicemitteilungen
Text: SERVICE-MITTEILUNGEN VEB INDUSTRIEVERTRIEB RUNDFUNK UND FERNSEH EN r a d i o - television AUSGABE: 2/73 DATUM: Febr. 1973 Mitteilung aus dem VEB Fernsehgerätewerke Staßfurt 1. Einsatz des Transistors P 217 A aus SU-Import im "Color 20” Der VK-Endtransistor T3 ASZ 1015 wird durch den Typ P 217 A er
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2sc 1203
Abstract: 2Sc1923 equivalent 2SK241 equivalent 2sa 1300 equivalent 2SC 1902 2sc2240 equivalent 2sc1815 equivalent 2SC 1207 N1408 2SC1815 NPN SOT-23
Text: 5. List of Lead Type and Surface Mount Type Interchangeable Products CTransistors for Low Frequency Small Signal Equipm ent> TO-92 VCEO k V (mA) N PN 50 150 2SC 1815 50 MINI PNP 2SA 1015 N PN 2SC 2458 SSM PNP 2S A 1048 2SA 1015L 2SC 2458L 2SA 1048L 100 2SC2240
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1815L
2SC2240
2SC1627
2SC752G
SC-70)
SC-59)
2SC2713
2SC4210
2SA1621
2SC4209
2sc 1203
2Sc1923 equivalent
2SK241 equivalent
2sa 1300 equivalent
2SC 1902
2sc2240 equivalent
2sc1815 equivalent
2SC 1207
N1408
2SC1815 NPN SOT-23
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2N4211
Abstract: 2N5872 2N1936 2N1937 2N3265 2N3266 2N3597 2N3598 2N3599 2N4210
Text: ”04 e-C g4Wæ~DlODE T R A M S ïS T O R C O DE |Efl4fl3S2 0 D 0 D 1 3 0 T INC 64 D 00 1 3 0 ~ D T-33-13 ~ D1QDE TRANSISTOR CQ.,1 \IC. (201 686-0400 • Telex: 139-385 • Outside NY & NJ area call TOLL FREE 800-526-4581 FAX No. 201-575-5863 NPNTO-63 PNP
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0D0D130
T-33-13
mDDETMI\l515TDRCCLiniC.
NPNTO-63
2N1936
2N1937
2N3265
2N3266
2N3597
2N6246
2N4211
2N5872
2N1936
2N1937
2N3265
2N3266
2N3597
2N3598
2N3599
2N4210
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Mitsubishi transistor
Abstract: transistor 1015 K 192 A transistor diode 210q k 1 transistor mitsubishi power Modules
Text: MITSUBISHI TRANSISTOR MODULES ! QM1000HA-24B j HIGH POWER SWITCHING USE j INSULATED TYPE { APPLICATION AC m otor controllers, UPS, CVCF, DC m otor controllers, NC equipm ent, W elders 2 - 1 90 MITSUBISHI ELECTRIC MITSUBISHI TRANSISTOR MODULES QM1000HA-24B
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QM1000HA-24B
1000H
Mitsubishi transistor
transistor 1015
K 192 A transistor
diode 210q
k 1 transistor
mitsubishi power Modules
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QM100TX1HB
Abstract: No abstract text available
Text: MITSUBISHI TRANSISTOR MODULES QM100TX1-HB HIGH POWER SWITCHING USE 1 INSULATED TYPE ! I QMÍ00TX1-HB • lc • • • • Collector current. 1O0A V cex Collector-emitter voltage.6 00V hre DC current gain. 750
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QM100TX1-HB
00TX1-HB
E80276
E80271
QM100TX1HB
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