1024 X 4 PROM Search Results

Contextual Info: ¿¿PD78P0308Y NEC FUNCTION DESCRIPTION Item Internal memory Function • PROM: 60 Kbytes'*»1* * RAM High-speed RAM: 1024 bytes Expansion RAM: 1024 bytes LCD display RAM: 40 x 4 bits General register 8 bits x 32 registers 8 bits x 8 registers x 4 banks

L817

Contextual Info: TBP24SA41 4096 BITS 1024 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP24SA41 TBP24SA41 J OR N PACK/ (TOP VIEW PROM 1024 X 4 AOA1A2A3A4A5A6A7A8A9G2G1- (5) O', QO Q1 A3 C 4 AOC 5 3 Vcc

74s572

Contextual Info: DM54/74S572 5 National Semiconductor DM54/74S572 1024 x 4 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 1024 words by 4 bits configuration. Memory enable inputs are provided to control the output states. When the device is

74S572

Abstract: DM74S572N DM74S572 J18A N18A DM54S572J DM54S572 dm74s572an
Contextual Info: DM54/74S572 National Semiconductor DM54/74S572 1024 x 4 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 1024 words by 4 bits configuration. Memory enable inputs are provided to control the output states. W hen the device is

DM74S573

Abstract: DM74S573N dm74s573j DM54S573AJ 573BN 573AJ 74s573
Contextual Info: DM54S573/DM74S573 National dOmSemiconductor DM54/74S573 1024 x 4 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 1024 words by 4 bits configuration. Memory enable inputs are provided to control the output states. When the device is

DM74S573N

Abstract: DM74S573 74S573 91931 DM74S573AV J18A dm74s573an 74S573J DM74S573J
Contextual Info: DM54S573/DM74S573 National dtim Semiconductor DM54/74S573 1024 x 4 4096-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 1024 words by 4 bits configuration. Memory enable inputs are provided to control the output states. W hen the device is

Contextual Info: TBP24S41 4096 BITS 1024 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP24S41 TBP24S41 J OR N PACKAGE PROM 1024 X 4 «TOP VIEW) (5) AO- (6 ) A1A2- A6C 1 A5C 2 A4 C 3 A3 C 4 3 vcc 3 A7 16 3 A 8

MB7114E

Abstract: MB7114 MB7114-W MB7100 fujitsu ten MB711
Contextual Info: April 1990 Edition 2 .0 FUJITSU DATASHEET MB7114E-W PROGRAMMABLE SCHOTTKY 1024-BIT READ ONLY MEMORY SCHOTTKY 1024-BIT DEAP PROM 256 WORDS x 4 BITS The Fujitsu MB7114-W is high speed Schottky TTL electrically field programmable read only memory organized as 256 words by 4-bits. With three-state outputs on the MB7114-W memory

AM9114EPC

Abstract: AM9114BPC AM91L14CDC AM9124 am9114cpc AM9114 AM9114BDM Am91L14BDM AM91L14BPC AM9114CDM
Contextual Info: Am9114 1024 x 4 Static R/W Random Access Memory DISTINCTIVE CHARACTERISTICS GENERAL DESCRIPTION • • • • The Am9114 is a 4096-bit high perform ance, static, N-channel, read/write, random access memory organized 1024 words by 4 bits. Operation is from a single +5V power

Contextual Info: TBP28SA86A 8192 BITS 1024 WORDS BY 8 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP28SA86A TBP28SA86A JW OR NW PACKAGE PROM 1024 X 8 AOA1A2A3A4- (TOP VIEW) (8 ) (7) A£ (6) AÛ (5) (4) A£ (3) A 5( 2)

Contextual Info: TBP28S86A 8192 BITS 1024 WORDS BY 8 BITS STANDARD PROGRAM M ABLE READ-ONLY M EM ORIES WITH 3-STATE OUTPUTS logic symbol pin assignment TBP28S86A TBP28S86A JW OR NW PACKAGE (TOP VIEW) PROM 1024 X 8 (8 ) AOA1- (7) A2- (5) A3- (4) A4- (3) ( 2) A 5A 6- 1023

TBP28L22

Contextual Info: TBP28L86A 8192 BITS 1024 WORDS BY 8 BITS LOW-POWER PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP28L86A TBP28L86A JW OR NW PACKAGE PROM 1024 X 8 AOA 1A 2A 3A4A 5A6A7A8 A9- (7) G2 G1 AV AV AV ( 6) (5) (4) (3) 1023 (2)

Contextual Info: A K 9 3 C 4 7 S e rie s W ide Vcc 2.5V ~ 5.5V 1024 bit Serial Electrically Erasable PROM FEATURES •ADVANCED CMOS E2PROM TECHNOLOGY IREAD/WRITE NON-VOLATILE MEMORY —Wide Vcc (2.5V ~ 5.5V) operation — 1024 bits, 64 x 16 organization — Easy to use yet versatile serial data interface

MB7114E

Abstract: MB7114l MB7114 7T13L
Contextual Info: FU JITSU MB 7113E MB 7114E/H MB 7113L MB 7114L PROGRAMMABLE SCHOTTKY 1024-BIT READ ONLY MEMORY Aprii 1986 Edition 3.0 SCH OTTKY 1024-BIT DEAP PROM 256 WORDS x 4 BITS The Fujitsu M 8 7 1 1 3 and M B 7 1 1 4 are high speed Schottky T T L electrically field program m able read only memories organized as 256 words by 4 bits.

O2-A2

Abstract: f0035 82S137A GDIP1-T18
Contextual Info: Product specification Philips Semiconductors Military Bipolar Memory Products 4K-bit TTL bipolar PROM 1024 x 4 82S137A DESCRIPTION FEATURES The 82S137A is field-programmable, which means that custom patterns are immediately available by following the Philips Generic I

74S287

Abstract: 74S287 programming instructions 74S287 programming DM74s287 DM74S287AN DM74S287N DM54S287J J16A N16A 74s* programming
Contextual Info: DM54S287/DM74S287 National ÆjA Semiconductor DM54/74S287 256 x 4 1024-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 256 words by 4 bits configuration. Memory enable inputs are provided to control the output states. When the device is

Contextual Info: DM100416 Bipolar PROMs CTI National dOmSemiconductor PREVIEW DM100416 256 x 4-Bit ECL PROM General Description Features The DM100416 ¡s a fully decoded high speed 1024-bit field Programmable Read Only Memory, organized 256 words by 4 bits. The DM100416 is voltage and temperature com­

74S387

Abstract: 74S387 prom 387AN 74s* programming DM74S387N DM74S387V J16A N16A dm74s387
Contextual Info: DM54S387/DM74S387 JOT National dOA Semiconductor DM54/74S387 256 x 4 1024-Bit TTL PROM General Description Features This Schottky memory is organized in the popular 256 words by 4 bits configuration. Memory enable inputs are provided to control the output states. When the device is

tbp24s10

Contextual Info: TBP24S10 1024 BIT 256 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH 3-STATE OUTPUTS pin assignment logic symbol TBP24S10 TBP24S10 J or N PACKAGE (TOP VIEW) PROM 256 X 4 (5) AO (6) A1 A2 AV (4) A3 (3) A4 A5 A6 A7 G2 °1 (7) (2) If (1 ) (15)

intersil im6100

Abstract: IM6654 512X8 24 PIN EPROM eprom 6653 J 6920 A IM6653 g 6653 4096-Bit UV Erasable PROM intersil eprom
Contextual Info: IM 6 6 5 3 /IM 6 6 5 4 4 0 9 6 Bit CMOS UV Erasable PROM INIERHL FEATURES GENERAL DESCRIPTION • O rganization — IM 6653: 1024 x 4 IM 6654: 5 1 2 x 8 • • Low Power — 770jiW M axim um Standby High Speed — 300ns 10V A ccess T im e for IM 6653/54 Al

Contextual Info: Am27S32/27S33 4,096-Bit 1024 x 4 Bipolar PROM > DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • | Low-current PNP inputs High-current open-collector and three-state outputs

Contextual Info: Am915 0 /Am91 L5 0 A m 9 1 5 0 /A m 9 1L 5 0 1 0 2 4 x 4 High-Speed Static R /W RAM DISTINCTIVE CHARACTERISTICS • • • • 1024 x 4 organization High speed- 2 0 ns Max. access time Separate data inputs and outputs Memory reset function • • • •

transistor 3199

Contextual Info: FAIRCHILD A Schlumberger Company F100Z416 256 x 4-Bit Programmable Read Only Memory F100K ECL Product Connection Diagram 16-Pin DIP Top View Description The F100Z416 is a 1024-bit field Programmable Read Only Memory (PROMI, organized 256 words by four bits

G1123

Contextual Info: TBP24SAI0 1024 BITS 256 WORDS BY 4 BITS STANDARD PROGRAMMABLE READ-ONLY MEMORIES WITH OPEN-COLLECTOR OUTPUTS pin assignment logic symbol TBP24SA10 J OR N PACKAGE TBP24SA10 PROM 256 X 4 AOA1A2A3A4A5A6- (TOP VIEW) (5) A6 £ 1 U i . 3 v c c A5 C 2 15 3 A 7