1024WORDS Search Results

intel 2758 eprom

Abstract: MSM2128 MSM2758
Contextual Info: C - f2- * i - 003831 sem iconductor *MSM2758 MARCH 1980 | •i i 8,192-B IT 1024 X 8 UV ERASABLE PROM GENERAL DESCRIPTION FEATURES The Oki M SM2758 is a 8192-bit ultraviolet erasable and electrical program m able read-only memory organized as 1024words by 8-bits using O ki’s Floating Gate N-channei S ilicon Gate

MB7122E

Abstract: MB7122 mb7121 16as15 v024v MB7100 68Vt
Contextual Info: APR 2 1993 May 1990 Edition 4.0 FUJITSU DATASHEET'- MB7121E/H/L, MB7122E/H/Y/L PROGRAMMABLE SCHOTTKY 4096-BIT READ ONL Y MEMORY SCHOTTKY 4096-RT DEAP PROM 1024WORDS x 4BITS The Fujitsu MB7121 and MB7122 are high speed Schottky TTL electrically field programmable read only memories organized as 1024words by 4bits. With

MB7122

Abstract: MB7100 MB7122E LCC-20C-F02 MB712 MB7122E-W 1024-words eutec
Contextual Info: APR 2 1993 June 1990 Edition 3.0 FUJITSU DATA SHEET MB7122E-W/L-W PROGRAMMABLE SCHOTTKY 4096-BIT READ ONLY MEMORY SCHOTTKY 4096-BIT DEAP PROM 1024WORDS X 4BITS The Fujitsu MB7122-W is high speed Schottky TTL electrically field programmable read only memory organized as 1024words by 4bits. With three-state outputs on

high level block diagram for asynchronous FIFO

Abstract: DIP28-W-300 LH540202 LJH540202
Contextual Info: LH540202 CMOS 1024 X 9 Asynchronous FIFO FEATURES FUNCTIONAL DESCRIPTION • Fast Access Times: 15/20/25/35/50 ns The LH540202 is a FIFO First-In, First-Out memory device, based onfully-staticCMOSdual-portSRAM tech­ nology, capable of storing up to 1024 nine-bit words. It

Contextual Info: Am27S35/Am27S37 8,192-Bit 1024x8 Bipolar Registered PROM with Programmable INITIALIZE Input Versatile programmable asynchronous or synchronous enable for simplified word expansion Buffered common INITIALIZE input either asynchronous (Am27S35) or synchronous (Am27S37)

Contextual Info: H I T A C H I / LOGIC/ARRAYS/MEN TS D Ë | 44=11,203 0010=135 b | ~ 92D H M I 0 0 4 7 4 , H M 1 4 7 4 F 10932 -^ T -4 6 -2 3 -0 8 1 0 2 4 - w o r d x 4 - b i t F u lly D e c o d e d R a n d o m A c c e s s M e m o r y The H M 100474 is a 1024-words x 4-bit, read/write, random access

conventional bicmos

Contextual Info: 3ÔE D B 4Ô2S771 QQOÔ'iSa 3 Ö I D T _ - P - % - 2 3 - 6 3 INTEGRATED DEVICE HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization

Fairchild F8

Contextual Info: HM100474-8, HM100474-10-HM100474F-8, HM100474F-10 1 0 2 4 - w ord X 4 - b i t Fully D eco ded R andom Access M em o ry The H M 1 0 0 4 7 4 is ECL 100k com patible, 1024-words x 4-bit, read H M 1 0 0 4 7 4 -8 , H M 1 0 0 4 7 4 -1 0 w rite, random access m em ory developed fo r high speed systems such

2708 eprom

Abstract: CDP1834C CDP1834 RCA-CDP1834
Contextual Info: HARRIS SEtllCOND SECTOR 37E D 43Q5271 0053742 T HAS Read-Only Memories ROMs CDP1834, CDP1834C M A7 — MA6 — MA5 — M A4 — M A 3— M A2— MAI — M AO— BUSO — BUSI — BUS2 — Vs s — J 24 23 22 2I 20 19 ie I7 16 15 14 13 2 3 4 5 6 7. 8 9 >0

PPC405EXR

Abstract: 11-G02 ppc405ex 16750 UART
Contextual Info: Part Number 405EXr Revision 1.10 - July 10, 2008 405EXr Preliminary Data Sheet PowerPC 405EXr Embedded Processor Features • AMCC PowerPC 405 32-bit RISC processor core operating from 333MHz to 533MHz including 16KB I- and D-caches with parity checking

Contextual Info: * SYNERG Y 1KX 4 ECL RAM SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ Address access time, U a : 5/6ns max. Chip select access time, tAc: 3/5ns max. Write pulse width, tww: 5/8ns min. Choice of two edge rates: 800 or I500ps typ.

PPC460EX

Abstract: AMCC PPC460EX AMCC 460, DATE CODE embedded powerpc 460 128GB Nand spec 64GB Nand flash ppc460 EIP-94 amcc 460EX 460EX
Contextual Info: Part Number 460EX Revision 1.09 – April 14, 2008 460EX Preliminary Data Sheet PowerPC 460EX Embedded Processor Features • PowerPC 440 processor operating between 600MHz and 1GHz with 32KB I-cache and Dcache and 256KB L2/SRAM with parity checking • On-chip memory 64KB

PPC460EX

Abstract: PPC460 amcc 460EX AMCC PPC460EX 460EX 728-ball embedded powerpc 460 PPC460-ex AMCC 460, DATE CODE "ESP"
Contextual Info: Part Number 460EX Revision 1.11 – May 29, 2008 460EX Preliminary Data Sheet PowerPC 460EX Embedded Processor Features • PowerPC 440 processor operating between 600MHz and 1GHz with 32KB I-cache and Dcache and 256KB L2/SRAM with parity checking • On-chip memory 64KB

460GT

Abstract: PPC460GT PowerPC 460GT ppc460 AK07 728-ball
Contextual Info: Part Number 460GT Revision 1.05 – April 14, 2008 460GT Preliminary Data Sheet PowerPC 460GT Embedded Processor Features • PowerPC 440 processor operating between 667MHz and 1GHz with 32KB I-cache and Dcache and 256KB L2/SRAM with parity checking • PCI V2.3 interface. Thirty-two bits at up to 66MHz

27S33

Abstract: PROM Am27S33 AM27S32A 1024-words AM27S33 27-S-33
Contextual Info: Am 27S32/27S33 4,096-Bit 1024 x 4 Bipolar PROM • High speed Highly reliable, ultra-fast programming Platinum-Sllicide fuses High programming yield • • • Low-current PNP inputs High-current open-collector and three-state outputs Fast chip select GENERAL DESCRIPTION

PPC405EX-SSC600T

Abstract: AMCC errata PPC405EX 405EX SPI NAND FLASH "ESP" PPC405EX-NSD600T AMCC PPC405EX
Contextual Info: Part Number 405EX Revision 1.23 - January 28, 2009 405EX Data Sheet PowerPC 405EX Embedded Processor Features • AMCC PowerPC 405 32-bit RISC processor core operating from 333MHz to 600MHz including 16KB I- and D-caches with parity checking • 128-bit processor local bus PLB operating up to

HN462532G

Abstract: HN462732G HN4827128G-25 6116ALSP-15 482732AG 6116LP 613128P HM4816AP4 6116ALP-10 HM4816AP-4
Contextual Info: \ HITACHI IC MEMORY DATA BOOK 0 HITACHI 1 IN D EX • • • • • • Q U IC K R E F E R E N C E G U ID E TO H IT A C H I IC M EM O R IES . 8 MOS R A M .

atmlu

Abstract: atmlh atml eeprom 110 AT24C04C-SSHM-T AT24C08C-SSHM-T ATML U 030 of ATML EEPROM AT24C08C-SSHM-B 8MA2 UDFN atmluyww
Contextual Info: Standard Features • Low-voltage and standard-voltage operation • • • • • • • • • • • – VCC = 1.7V to 5.5V Internally organized as 512 x 8 4K , or 1024 x 8 (8K) I2C-compatible (two-wire) serial interface Schmitt Trigger, filtered inputs for noise suppression

Contextual Info: Preliminary HM10474-8,HM10474-10 1 0 2 4 - w ord x 4 -b it Fully D e cod e d R and om A c c e s s M em ory The H M 10474 is E C L 10k compatible, 1024-words x 4-bit, read write, random access memory developed for high speed systems such as scratch pads and control/buffer storages.

Contextual Info: Integrated Device Technology, inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10474 IDT100474 IDT101474 FEATURES: DESCRIPTION: • • • • • • • • The IDT10474, IDT100474 and 101474 are 4,096-bit high­ speed BiCEMOS ECL static random access memories

Contextual Info: Integrated Device Technology, Inc. HIGH-SPEED BiCMOS ECL STATIC RAM 4K 1Kx 4-BIT SRAM PRELIMINARY IDT10A474 IDT100A474 IDT101A474 FEATURES: DESCRIPTION: • 1024-words x 4-bit organization • Address access time: 5/7/8/10/15 ns • Low power dissipation: 600mW (typ.)

21A95

Abstract: DL3242 3dd237 50-i2
Contextual Info: * S Y 10 474-3/4/5/7 S Y 1 00474-3/4/5/7 S Y 1 0 1474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR F E A TU R E S D E S C R IP T IO N • Address access time, tAA: 3/4/5/7ns max. ■ Chip select access time, tAC: 2ns max. ■ Write pulse width, tww: 3ns min.

sy-10

Abstract: SY100474
Contextual Info: SY10/100/101474-3 SY10/100/101474-4 SY10/100/101474-5 SY10474-3/4/5/7 SY10/100/101474-7 SY100474-3/4/5/7 SY101474-3/4/5/7 1K x 4 ECL RAM SYNERGY SEMICONDUCTOR FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTION Address access time, tAA: 3/4/5/7ns max.

Contextual Info: Am27S32/27S33 4,096-Bit 1024 x 4 Bipolar PROM > DISTINCTIVE CHARACTERISTICS • • • High speed Highly reliable, ultra-fast programming Platinum-Silicide fuses High programming yield • • • | Low-current PNP inputs High-current open-collector and three-state outputs