1024K 16 Search Results

EDI9G361024C

Contextual Info: EDI9G361024C 1024K x 36 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION n 1024K x 36 bit CMOS Static The EDI9G361024C is a high speed 36Mb Static RAM module organized as 1024K words by 36 bits. This module is constructed from nine 1024K x 4 Static RAMs in SOJ packages on an epoxy

CY14B108N-BA25XI

Abstract: 54TSOP CY14B108L-BA25XI
Contextual Info: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small

Contextual Info: CY14B108L CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM 8 Mbit (1024K x 8/512K x 16) nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small

EDI9G361024C

Contextual Info: EDI9G361024C 1024K x 36 Static RAM CMOS, High Speed Module FEATURES DESCRIPTION •1024K x 36 bit CMOS Static The EDI9G361024C is a high speed 36Mb Static RAM module organized as 1024K words by 36 bits. This module is constructed from nine 1024K x 4 Static RAMs in SOJ packages on an epoxy

AS7C316098B

Contextual Info: AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 REVISION HISTORY Revision Rev. 1.0 Confidential Description Initial Issued Issue Date June 2014 Rev1.0 – June 2014 AS7C316098B 1024K X 16 BIT HIGH SPEED CMOS SRAM Rev. 1.0 FEATURES GENERAL DESCRIPTION

LE28DW3215AT-80

Abstract: flash "simultaneous read write" 198 DQ15-DQ0 A20-A0
Contextual Info: 32 Megabit FlashBank Memory LE28DW3215AT-80 1 FEATURES: Single 3.0-Volt Read and Write Operations Separate Memory Banks by Address Space − Bank1: 16Mbit 1024K x 16 Flash − Bank2: 16Mbit(1024K x 16) Flash − Simultaneous Read and Write Capability Superior Reliability

54-pin TSOP thermal resistance junction to case

Contextual Info: CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small

Contextual Info: I 1 MEGABIT CM O S STATIC RAM MODULE IDT7M624S Integrated D evice Technology. Inc FEATURES: DESCRIPTION: • High-density 1024K-bit CMOS static RAM module The IDT7M624 is a 1024K-bit high-speed CMOS static RAM constructed on a multi-layered ceramic substrate using 16

CY14B108M

Contextual Info: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 25 ns and 45 ns access times ■ Clock alarm with programmable interrupts ■ Internally organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)

Contextual Info: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 25 ns and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)

10262 to-3

Abstract: psoc c code for ring counter
Contextual Info: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 25 ns and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)

Contextual Info: 1 M EG ABIT CM O S STATIC RAM PLASTIC M O DULE ADVANCE IDT7MB624 Integrated Devicelechnology. Inc FEATURES: DESCRIPTION: • High-denslty 1024K-bit CMOS static RAM module The IDT7MB624 is a 1024K-bit high-speed CMOS static RAM constructed on an epoxy laminate substrate using 16 IDT7187

CY14B108N-BA20XIT

Abstract: 54-TSOP
Contextual Info: CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small

cy14b108l-zs20xi

Abstract: CY14B108L-ZS45XI CY14B108N-BA25XI 164uf
Contextual Info: CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small

TSOP II 54

Contextual Info: CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally Organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on Power Down with only a Small

cy14b108n

Contextual Info: PRELIMINARY CY14B108L, CY14B108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns Access Times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off Automatic STORE on power down with only a small

Contextual Info: A29800 Series 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue May 4, 2001

Contextual Info: ADVANCE CY14E108L, CY14E108N 8 Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14E108L) or 512K x 16 (CY14E108N) ■ Hands off automatic STORE on power down with only a small

Contextual Info: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 20 ns, 25 ns, and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)

Contextual Info: CY14B108K, CY14B108M 8 Mbit 1024K x 8/512K x 16 nvSRAM with Real Time Clock Features • Watchdog Timer ■ 20 ns, 25 ns, and 45 ns Access Times ■ Clock Alarm with Programmable Interrupts ■ Internally Organized as 1024K x 8 (CY14B108K) or 512K x 16 (CY14B108M)

CY14B108N-BA25XI

Abstract: 54TSOP
Contextual Info: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small

A29800UV-70F

Abstract: A29800TV-70F a29800um-70f A29800 A29800V
Contextual Info: A29800 Series 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue May 4, 2001

Contextual Info: ADVANCE CY14B108L, CY14B108N 8-Mbit 1024K x 8/512K x 16 nvSRAM Features Functional Description • 20 ns, 25 ns, and 45 ns access times ■ Internally organized as 1024K x 8 (CY14B108L) or 512K x 16 (CY14B108N) ■ Hands off automatic STORE on power down with only a small

A29800UV-70F

Abstract: a29800uv-70if A29800TV-70I A29800TV-70F a29800um-70f A29800TV-70IF A29800UV70F A29800 A29800UV-55 A29800UV-70I
Contextual Info: A29800 Series 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Document Title 1024K X 8 Bit / 512K X 16 Bit CMOS 5.0 Volt-only, Boot Sector Flash Memory Revision History Rev. No. History Issue Date Remark 0.0 Initial issue May 4, 2001