1050G Search Results

SI-1050G

Abstract: SI-1010G SI-1030G SI-1020G sanken si-1050g si-1020ga VK10k SI1010G SI1020 SI-10506
Contextual Info: E L E C T R IC A L C H A R A C T E R IS T IC S C h a ra c te ris tic At 25°C am bient, 1kHz, R z .= 8 ohms S I- 101OG SI-1020G SI-1030G SI-1050G 10W 20W 30W 50W 3 4 V o r + 17V 46V or + 2 3 V 54V or + 2 7 V 66V or + 3 3 V 4 5 V o r ± 22.5V 55V or + 2 5 V

Contextual Info: The Features You Need For Your Applications Improves Quality The HP 8902S minimizes measurement system’s high performance instruments perb accuracy: AM and FM, ±1% ; level ± 0 .0 2 dB ± 0.0 2 d B /1 0 dB; and carrier 10 Hz resolution. The HP 8902S can be assembled and running in

DIM1200FSM12-A000

Contextual Info: DIM1200FSM12-A000 DIM1200FSM12-A000 Single Switch IGBT Module Replaces July 2002, version DS5547-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5547-3.0 March 2003

74188

Abstract: DIM1200NSM12-E000 IGBT full bridge 1200 28130
Contextual Info: DIM1200NSM12-E000 DIM1200NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5750-1.2 FEATURES PDS5750-2.0 June 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ VCE(sat) *

DIM400DDM12-A000

Abstract: DS5532-3
Contextual Info: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Replaces July 2002, version DS5532-2.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5532-3.0 March 2003

4250A

Abstract: DIM2400NSM12-E000 Partial Discharge Measurements
Contextual Info: DIM2400NSM12-E000 DIM2400NSM12-E000 Single Switch IGBT Module Replaces April 2004 version, issue PDS5758-1.0 FEATURES PDS5758-2.0 April 2004 • Trench Gate Field Stop Technology ■ Low Conduction Losses ■ Low Switching Losses KEY PARAMETERS VCES typ

DFM400NXM33-F000

Abstract: 3300V FRD
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating

Contextual Info: M ITEL DSF21035SV Fast Recovery Diode SEMICONDUCTOR Supersedes January 1996 version, DS4176 - 1.3 D S 4 1 7 6 -1 .4 APPLICATIONS • Freewheel Diode. ■ A ntiparallel Diode. ■ Inverters. ■ C hoppers. March 1998 KEY PARAMETERS v RRM 3500V 3000A Jf AV

Contextual Info: Prices as of April 16, 2014. Check Web site for most current prices. DL305 Family of Products DL305 system example with serial communications network and operator interface OPC/DDE Data Server on PC RS422 Business system C-more panel Industrial computer Book 1 14.1

SP06Q002-TZA

Abstract: Hitachi Scans-001 JIS-K5400
Contextual Info: HITACHI KAOHSIUNG HITACHI ELECTRONICS CO.,LTD P.O. BOX 26-27 2,13TH EAST ST. K.E.P.Z. KAOHSIUNG TAIWAN R.O.C. TEL: 07 8215811 ( 7LINE) FAX:(07) 8215815 FOR MESSRS : DATE : May.07.2004 CUSTOMER'S ACCEPTANCE SPECIFICATIONS SP06Q002-TZA CONTENTS No SHEET No.

DFM900FXM12-A000

Contextual Info: DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.3 November 2007 LN25316 FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF IF IFM (typ) (max) (max) 1200V 1.9V 900A 1800A Isolated Copper Base plate

DFM600FXM18-A000

Abstract: 1050g
Contextual Info: DFM600FXM18-A000 DFM600FXM18-A000 Fast Recovery Diode Module DS5438-1.4 April 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM typ VF (max) IF (max) IFM 1800V 2.0V 600A 1200A ■ Isolated Base

Contextual Info: Agilent 8901B Modulation Analyzer 150 kHz–1300 MHz and Agilent 11722A Sensor Module (100 kHz– 2600 MHz) Four Instruments In One Data Sheet • RF Power: ±0.02 dB instrumentation accuracy • RF Frequency: 10 Hz resolution • AM and FM: 1% accuracy

12v to 1000v inverters circuit diagrams

Abstract: DIM1200FSM17-A000
Contextual Info: DIM1200FSM17-A000 DIM1200FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5456-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5456-2.1 May 2002

DIM800DDM17-A000

Abstract: DIM800DDM17
Contextual Info: DIM800DDM17-A000 DIM800DDM17-A000 Dual Switch IGBT Module Replaces May 2001, version DS5433-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5433-3.0 March 2002

internal diagram of 7400 IC

Abstract: DIM1600FSM17-A000
Contextual Info: DIM1600FSM17-A000 DIM1600FSM17-A000 Single Switch IGBT Module Replaces March 2002, version DS5455-2.0 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates DS5455-2.1 May 2002

DIM400DDM12-A000

Contextual Info: DIM400DDM12-A000 DIM400DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5532-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DIM800DCM12-A000

Contextual Info: DIM800DCM12-A000 DIM800DCM12-A000 IGBT Chopper Module DS5548-1.2 May 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS VCES typ VCE(sat) *

dim800ddm12

Abstract: DIM800DDM12-A000
Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information DS5528-1.1 March 2002 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS

DFM900FXM12-A000

Contextual Info: DFM900FXM12-A000 DFM900FXM12-A000 Fast Recovery Diode Module DS5479-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V 900A 1800A ■ Isolated Base

DIM500GCM33-TS000

Abstract: DIM500GCM33-TS
Contextual Info: DIM500GCM33-TS000 IGBT Chopper Module Replaces DS6098-2 DS6098-3 September 2014 LN31960 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  High Current Density Enhanced DMOS SPT VCES VCE(sat) * (typ) IC (max)

DIM800DDM12-A000

Contextual Info: DIM800DDM12-A000 DIM800DDM12-A000 Dual Switch IGBT Module Preliminary Information Replaces issue March 2002, version DS5528-1.1 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates

DFM900FXM12-A000

Contextual Info: DFM900FXM12-A000 DFM900FXM12-A000 Fast Recovery Diode Module Preliminary Information DS5479-1.2 July 2001 FEATURES • Low Reverse Recovery Charge ■ High Switching Speed ■ Low Forward Voltage Drop KEY PARAMETERS VRRM VF typ (max) IF (max) IFM 1200V 1.9V

DIODE i2t

Contextual Info: DIM800DCM17-A000 DIM800DCM17-A000 IGBT Chopper Module Preliminary Information DS5433-2.0 May 2001 FEATURES • 10µs Short Circuit Withstand ■ High Thermal Cycling Capability ■ Non Punch Through Silicon ■ Isolated MMC Base with AlN Substrates KEY PARAMETERS