1064 NM Search Results

1064 nm

Abstract: RLTCO-1064-50W
Contextual Info: RLTCO-1064-50W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • Output Power: 50 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability

1064 nm

Abstract: RLTCO-1064-100W
Contextual Info: RLTCO-1064-100W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • Output Power: 100 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability

1064 nm

Abstract: RLTCO-1064-200W
Contextual Info: RLTCO-1064-200W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • Output Power: 200 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability

LiNbO3 phase modulator

Contextual Info: NIR-LN series LiNb03 intensity and phase modulators for 1064 nm and near infrared NIR-LN series LiNb03 intensity and phase modulators for 1064 nm and near infrared Product family 1550 nm & 1300 nm windows 1550 nm & 1300 nm windows NIR window description data rates

1064 nm

Abstract: RLTCO-1064-75W
Contextual Info: RLTCO-1064-75W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • Output Power: 75 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability

QD100-4X

Contextual Info: Silicon Photodetector Series 4X HIGH SPEED 1064 NM PULSE SENSING The 4X series of photodetectors are designed specifically for sensing high speed 1064 nm Nd YAG laser pulses. The detector structure is designed to be fully depleted at 150 volts reverse bias and offers high

M9-A64-0200-S5P

Contextual Info: Product Specifications Features 1064 nm Single-Mode Laser Diodes • Up to 350 mW CW output power. Description: • High Quality, Reliability, and Performance High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 1064 nm single mode

Contextual Info: I 45E D CENTRONIC LTD m s i f l ? □□□□□is ^ • cent Silicon Photodetectors_ Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd YAG laser sensing applications. They offer high pulsed

RLCO-1064-2000-TO3

Contextual Info: RLCO-1064-2000-TO3 TECHNICAL DATA High Power Infrared Laser Diode Features • • • • Lasing Mode Structure: multi mode Peak Wavelength : typ. 1064 nm Optical Output Power: 2 W Package: TO-3, without Photodiode Electrical Connection Pin Configuration

1064 nm

Abstract: RLTCO-1064-400W
Contextual Info: RLTCO-1064-400W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • • Output Power: 400 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability

1064 nm

Abstract: RLTCO-1064-500W
Contextual Info: RLTCO-1064-500W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • • Output Power: 500 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability

kingbright L-53

Abstract: L-53 kingbright C1700
Contextual Info: Xn^ BRTCTTT E LECTRONI C Typen­ bezeichnung Type Gehäuse Case L — Emissions­ farbe Colour STE Wellen­ länge Wave Length it peak ^^"0 1064HD/A 660 L - 1064 HD/B Ö T\ II 1 K “ L — 1064GD/A 1 565 L — 1064GD/B L - 1064 YD/A \ 1 A 595 L - 1064 YD/B

TEM00

Contextual Info: DATA SHEET EYP-DFB-1064-00080-1500-TOC03-000x Version 0.90 2009-05-20 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 1064 nm DFB Laser with hermetic TO Housing

centronic osd100 6

Abstract: QD320-4 OSD50-4 LD20-4 MD100-4 MD25-4 OSD100-4 OSD200-4 OSD300-4 QD100-4
Contextual Info: CENTRONIC INCi E-0 DIV 41E D B Silicon Photodetectors mSESO UGQOBbO 1 M C E N B r-^-nr Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd Y A G laser sensing applications. They offer high pulsed

centronic osd100 6

Abstract: QD320-4 LD20-4 MD100-4 MD25-4 OSD100-4 OSD200-4 OSD300-4 OSD50-4 QD100-4
Contextual Info: CENTRCNIC INC* E-0 DIV 7~- $ * / ' ¿¿S’ 13E 0 | m S S S G 0Ü0G273 Silicon Photodetectors 3 | Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd YAG laser sensing applications. They offer high pulsed

1064 nm

Abstract: RLTCO-1064-300W
Contextual Info: RLTCO-1064-300W TECHNICAL DATA High Power Infrared Diode Pumped Solid State Laser Features Applications • • • • • • • • • Output Power: 300 W 1064 nm Emission Wavelength Small Size, Compact Package Water-Cooled, High Efficiency High Beam Quality, Stability and Reliability

QD320-4

Abstract: QD100-4 centronic osd100 6 LD20-4 MD100-4 MD25-4 OSD100-4 OSD200-4 OSD300-4 QD50-4
Contextual Info: i 45E CENTRONIC LTD m S lfi? D DDDDD1S ^ • C E N T T * V / - ‘/ S ' Silicon Photodetectors_ Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd YAG laser sensing applications. They offer high pulsed

TEM00

Abstract: EYP-DFB-1064-00040-1500-BFY02-0000 1064 nm laser diode
Contextual Info: DATA SHEET EYP-DFB-1064-00040-1500-BFY02-0000 Version 0.90 2009-03-10 page 1 from 5 DFB/DBR TPL/TPA DISTRIBUTED FEEDBACK LASER GaAs Semiconductor Laser Diode with integrated grating structure RWE/RWL BAL General Product Information Product Application 1064 nm DFB Laser with hermetic Butterfly Housing

Contextual Info: Product Specifications Features 1064 nm Single-Mode Laser Diodes x Up to 350 mW CW output power. Description: x High Quality, Reliability, and Performance High brightness, high quality, and high reliability are the foundation of our single mode product line. Axcel’s 1064 nm single mode

Contextual Info: Isolator 1064 nm Polarization Insensitive Isolator Single Stage Parameter Dual Stage Center Wavelength λc 1064 nm Bandwidth ± 10nm Peak Isolation (typical) ≥ 38 dB ≥ 55 dB Isolation in Band (at 23° C) ≥ 30 dB ≥ 45 dB Insertion Loss (typical, (λc ,23° C)

centronic osd100 6

Abstract: LD20-4 MD100-4 MD25-4 OSD100-4 OSD200-4 OSD300-4 OSD50-4 QD100-4 QD50-4
Contextual Info: i CENTRONIC LTD Silicon Photodetectors_ Series 4 Designed for 1064 nm Pulsed Operation The Series 4 photodetectors are specifically designed for 1064 nm pulsed Nd YAG laser sensing applications. They offer high pulsed and D.C. responsivity extending to 1150 nm and also provide an extremely low capacitance per unit area.

FS-PM-5121

Abstract: single mode fiber 3M FS-PM-5121 96216 5121 M TEM00 SM13-P-7/125-UV/UV-400
Contextual Info: 125 Specifications Parameter 125-1319-XXX 125-1064-XXX 1319 nm >100, 150, 200 mW TEM00 Single frequency <5 kHz/msec >1000 m <50 MHz/hour <0.05% rms <5% peak-to-peak >10 GHz >30 GHz >1 GHz/sec >30 MHz >30 kHz 1 minute 1064 nm >25 mW TEM00 Single frequency <5 kHz/msec

MIL-STD-2020

Contextual Info: E G & 6/CANADA/0PT0ELEK M7E T> m 3030bl0 000032B 1 • CANA YAG Series_ ~r-<//-53 Features • • • • Planar Diffused Large A rea W ide Dynam ic R ange > 5 0 % DC Quantum Efficiency at 1064 nm • Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width

YAG-100A

Abstract: 7052 glass MIL-STD-750b YAG-200 YAG100A YAG-100 YAG-444 YAG-040B YAG040B
Contextual Info: E G & G S7E JUDSON D • B030b0S 0G0Q177 M ■ YAG Series Features • • • • • • • • • Planar Diffused Large Area Wide Dynamic Range > 5 0 % DC Quantum Efficiency at 1064 nm Pulse Quantum Efficiency at 1064 nm > 3 8 % at 20 nS Pulse Width Oxide Passivated