1066 Search Results

Contextual Info: Product Number: 1066-0-15-80-30-84-10-0 Description: 1066 - Receptacle With No Tail Accepts .015-.025 diameter leads. Packaging: Packaged in Bulk Mill-Max Part Number Shell Plating Contact Plating 1066-0-15-80-30-84-10-0 200 - 300 " Tin matte finish over

s-61-402

Abstract: 2012 NEC
Contextual Info: Detailed Specifications & Technical Data ENGLISH MEASUREMENT VERSION 1066A Multi-Conductor - 600V Tray Cable For more Information please call 1-800-Belden1 Description: 18 AWG pairs stranded 7x26 bare copper conductors, twisted pairs, PVC/Nylon insulation, overall

Contextual Info: M2S1G64CBH4B5P / M2S2G64CB88B5N / M2S4G64CB8HB5N 1GB: 128M x 64 / 2GB: 256M x 64 / 4GB: 512M x 64 PC3-8500 / PC3-10600 / PC3-12800 Unbuffered DDR3 SO-DIMM Based on DDR3-1066/1333/1600 128Mx16 1GB / 256Mx8 (2GB) / 256Mx8 (4GB) SDRAM B-Die Features •Performance:

NT5TU128M8DE

Abstract: NT5TU64M16DG nt5tu64m16dg-Bd NT5TU128M8DE-BD NT5TU256M4DE nt5tu64m NT5TU64M16 NT5TU64M16DG-3C NT5TU64M16DG-3CI NT5TU64M16DG-BE
Contextual Info: NT5TU256M4DE / NT5TU128M8DE / NT5TU64M16DG NT5TB256M4DE / NT5TB128M8DE / NT5TB64M16DG 1Gb DDR2 SDRAM Feature CAS Latency Frequency -37B/-37BI -3C/-3CI -AD/-ADI -AC/-ACI/-ACL -BE -BD DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 DDR2-1066 4-4-4 5-5-5 6-6-6

NT1GC72B89A0NF

Abstract: 128MX8 nanya 2gb DDR3 DIMM NT2GC72B8PA0NF-CG ddr3 PCB footprint NT2GC72B8PA0NF Nanya DDR3 DDR3 DIMM footprint DDR3 udimm jedec PC3-10600
Contextual Info: NT1GC72B89A0NF / NT2GC72B8PA0NF NT1GC72B89A1NF / NT2GC72B8PA1NF 1GB: 128M x 72 / 2GB: 256M x 72 PC3-8500 / PC3-10600 Unbuffered DDR3 SDRAM DIMM with ECC Based on DDR3-1066/1333 128Mx8 SDRAM A-Die Features •Performance: Speed Sort DIMM CAS Latency fck – Clock Freqency

18w cfl circuit

Abstract: OSRAM cfl OSRAM CFL transistor Electronic ballast electronic ballast 32w cfl lamp osram transistor Electronic ballast vogt inductors osram ballast circuit OSRAM DULUX el 18w OSRAM DULUX el electronic ballast 18w cfl lamp
Contextual Info: Application Note AN-1066 Procedures to Design 220VAC CFL Solutions with the IR2520D By Cecilia Contenti Table of Contents Page Typical Circuit for 220VAC CFL Applications .1

CXA1236

Abstract: cxd1244s BX1500 CX20152 CXD2551M cxa123 cxa11
Contextual Info: 1. List of Model Names Type Page Type Page CX20018 C XA 1144S 305 C XA 1076A K C XA1176AK CX20018 P C B 522 C XA 1076A K P C B C XA1176AKPCB CX20051A 183 0X20116 C XA 1066K 443 CX20116 }P C B C XA 1066K 33 65 133 95 CXD1175M/P 140 C X A 1096P P C B 467 C X D 1 175P/CXA1106P P C B

CDC921

Abstract: CDC924 CDCFR83 CDCFR83DBQ CDCFR83DBQG4 CDCFR83DBQR MO-137
Contextual Info: CDCFR83 DIRECT RAMBUS CLOCK GENERATOR SCAS665B − APRIL 2001 REVISED OCTOBER 2005 D 533-MHz Differential Clock Source for D D D D D D D D D Direct Rambus Memory Systems for an 1066-MHz Data Transfer Rate Synchronizes the Clock Domains of the Rambus Channel With an External System

Contextual Info: m o le x ORDERING INFORMATION MALE 16 AW G O rd er No. 84634-1025 84634-1026 84634-1027 84634-1028 84634-1029 UAW G O rd er No. 84634-103! 84634-1036 84634-1037 84634-1038 84634-1039 l i AW G O rd er No. 84634-1065 84634-1066 84634-1067 18 AW G O rd er No.

Contextual Info: 240PIN DDR3 1066 ECC UDIMM 1024MB With 128Mx8 CL7 TS128MLK72V1U Description Placement The TS128MLK72V1U is a 128M x 72bits DDR3-1066 ECC Unbuffered-DIMM. The TS128MLK72V1U consists of 9pcs 128Mx8bits DDR3 SDRAMs in FBGA packages and a 2048 bits serial EEPROM on a 240-pin printed

SSTL-15

Abstract: 204 pin so-DIMM DDR3 connector SSTL15 256Mx8 sstl_15 204Pin SODIMM ddr3 204 DDR3-1066 MODULE MEMORY DDR3 DDR3 Connector Specification
Contextual Info: Memory Product Specification DDR3-1066 SO-DIMM Description The Module is DDR3-1066 CL7 Small Outline Memory module. The Module density from 1GB to 4GB, it consists it consists 128M/256Mx8 bit DDR3-1066MHz Synchronous DRAMs in FBGA packages, Memory Module intented for mounting into 204-pin edge connector sockets.

Contextual Info: HITACHI/ L O G I C / A R R A Y S / M E N 'ÎH D eJ 44^203 DOlObbb Q 10666 d 7 "-S 2 -3 Ì 92D HD74HCT640,HD74HCT643 Both the HD74HCT640 and the HD74HCT643 have one active low enable Input G , and a direction control (D IR ). When the DIR Input li high, data flow i from the A Inputi

SSL-LX30FT4IGW

Contextual Info: PART NUMBER UNCONTROLLED DOCUMENT REV. SSL—LX30FT4IGW REV, A A E.C.N. NUMBER AND REVISION COMMENTS E.C.N. #10666. DATE 1 0.2.00 03,00 [00,118] ELECTRO-OPTICAL CHARACTERISTICS Ta = 2 5 X PARAMET[R lf= 2 0 m A 1YP PEAK WAVELENGTH MAX 635 RED 2.0 / REVERSE VOLTAGE

SO-1066-001

Contextual Info: SO-1066-001 Page 1 of 2 SO-1066-001 ENGINEERING DATA SHEET RELAY SOCKET 5 AMP BASIC SOCKET SERIES DESIGNATION FOR: Series Y DESIGNED TO THE STANDARDS AND REQUIREMENTS OF: MIL-S-12883/44 GENERAL CHARACTERISTICS 1. Supplied with mounting hardware and No. 20 contacts, No. 20 crimp.

Contextual Info: W3J512M64G-XPBX W3J512M64G-XLBX 4GB – 512M x 64 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included

w3j128m72

Abstract: w3j512m72
Contextual Info: W3J512M72G-XPBX W3J512M72G-XLBX 4GB – 512M x 72 DDR3 SDRAM – 1.5V – 543 PBGA Multi-Chip Package FEATURES  Address/control terminations included  DDR3 Data Rate = 800, 1066, 1333, 1600* Mb/s  Differential clock terminations included

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 3 25A 25 19A DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1512 404/804/164 QD*I 512 Mbit DDR2 SDRAM, INDUSTRIAL TEMPERATURE 4 BANKS X 32Mbit X 4 (404) 4 BANKS X 16Mbit X 8 (804) 4 BANKS X 8Mbit X 16 (164) 5 37 3 25A 25 19A DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns

direct rdram rambus 1200

Contextual Info: 800/1066/1200 MHz RDRAM£ 256/288 Mb 512Kx16/18x32s Advance Information Overview The RDRAM£ device is a general purpose highperformance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other application where high

Contextual Info: PRELIMINARY V59C1G01 408/808/168 QA HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 32Mbit X 4 (408) 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 5 37 3 25 18 DDR2-400 DDR2-533 DDR2-667 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1256 404/804/164 QI HIGH PERFORMANCE 256 Mbit DDR2 SDRAM 4 BANKS X 16Mbit X 4 (404) 4 BANKS X 8Mbit X 8 (804) 4 BANKS X 4Mbit X 16 (164) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4)

Contextual Info: V59C1G01 808/168 QC HIGH PERFORMANCE 1Gbit DDR2 SDRAM 8 BANKS X 16Mbit X 8 (808) 8 BANKS X 8Mbit X 16 (168) 37 3 25A 25 19A DDR2-533 DDR2-667 DDR2-800 DDR2-800 DDR2-1066 Clock Cycle Time (tCK3) 5ns 5ns 5ns 5ns 5ns Clock Cycle Time (tCK4) 3.75ns 3.75ns 3.75ns

da53

Abstract: DB26 0195c Outline T39
Contextual Info: 1066 MHz RDRAMâ 256/288 Mb 512Kx16/18x32s Advance Information Overview • The Rambusâ DRAM (RDRAMâ) device is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any other

da53

Abstract: DB26
Contextual Info: 1066 MHz RDRAMâ 512/576 Mb 8Mx16/18x4i Advance Information Overview • The 1066 MHz Rambus DRAM (RDRAMâ) is a general purpose high-performance memory device suitable for use in a broad range of applications including computer memory, graphics, video, and any