106E CAPACITOR Search Results

106E capacitor

Contextual Info: L7C10S L7C1CG 256K x 4 Static RAM □256K x 4 Static RAM with Chip Select Powerdown, Output Enable □Auto-Powerdown Design □Advanced CMOS Technology □High Speed — to 17 ns maximum □Low Power Operation Active: 400 mW typical at 25 ns Standby: 5 mW typical

106E capacitor

Abstract: CR-73
Contextual Info: KOA CAPACITOR/RESISTOR CHIP CR73 SPEER ELECTRONICS, IN C . CAPACITOR/RESISTOR CHIP s/ • Im p ed a nce M atching Function • Ideal fo r High S peed C lock C ircuits • N oise F iltering Function • R educes M ounting S pace and C o m p on e nt C ount by 50%

Contextual Info: DEARBORN METAL CASE METALIZED FILM CAPACITORS Type 251P Hermetically-Sealed M etal-C ase Metalized Teflon Capacitors Features * * * * * High Cap Stability Small Size Low Power Dissipation Low Dielectric Absorption High Insulation Resistance 9922 Electrical Specifications

Contextual Info: Type 103P VISHAY Vishay Sprague T Paper Capacitors M etal Case, Film/Foil, 10 Am pere Thru-Pass, Subm iniature FEATURES • Bulkhead mounting • Excellent RFI specifications • Hermetically encased • Low inductance connection • Low insertion loss PERFORMANCE CHARACTERISTICS

196p sprague

Abstract: MARKING S04 Sprague 196P 131P103X9600S02 SPRAGUE 047 106E 131P 131P223X9600S02 131P473X9600S02
Contextual Info: Type 131P Vishay Sprague Film Snubber Capacitors Metal-Case, Paper/Polyester, Dielectric Extended Foil Electrodes FEATURES • • • • • PERFORMANCE CHARACTERISTICS Suggested replacement for Type 196P Moderate cost Small size High peak current ratings

Contextual Info: DEARBORN PAPER - POLYESTER / FOIL CAPACITORS Type 131P Snubber Capacitors Metal - Case Paper / Polyester Dielectric Extended Foil Electrodes Features * * * * M oderate Cost Small Size High peak current ratings High corona starting voltage 9922 Electrical Specifications

5503 dm

Abstract: tdk 4.0 mc 4.0 mc tdk ccr4.0mc3 tdk a 4.0 mc MIL-STD-202f Method 106e shear piezoelectric tdk ccr mc5 MIL-STD-202F 106E C6320
Contextual Info: Chip Ceramic Resonators With Built-in Capacitors CCR Series FEATURES • 3.58 to 12MHz band “Shear slide mode”, 16 to 60MHz band “Shear vertical mode” are thin type chip ceramic resonators with overtone mode. • Built-in capacitors in which piezoelectric elements are

196p sprague

Abstract: Sprague 196P MARKING S04 sprague 106E 106E 131P 131P103X9600S02 131P223X9600S02 131P473X9600S02
Contextual Info: Type 131P Vishay Sprague Film Snubber Capacitors Metal-Case, Paper/Polyester, Dielectric Extended Foil Electrodes FEATURES • • • • • PERFORMANCE CHARACTERISTICS Operating Temperature: - 65°C to + 125°C. Capacitance Range: 0.01µF to 0.47µF. Capacitance Tolerance: ± 20%, ± 10%, ± 5%, ± 2%.

Contextual Info: Type 103P Vishay Sprague Paper Capacitors Metal Case, Film/Foil, 10 Ampere Thru-Pass, Subminiature FEATURES • Bulkhead mounting • Excellent RFI specifications • Hermetically encased • Low inductance connection • Low insertion loss PERFORMANCE CHARACTERISTICS

103p capacitor

Abstract: 103P Type 103P 103P472X0600S 103P105X0200T 103P224X0200T 103P473X0200S 103P104X0200S 103P104X0200T 103P473X0200T
Contextual Info: Type 103P Vishay Sprague Paper Capacitors Metal Case, Film/Foil, 10 Ampere Thru-Pass, Subminiature FEATURES • Bulkhead mounting • Excellent RFI specifications • Hermetically encased • Low inductance connection • Low insertion loss PERFORMANCE CHARACTERISTICS

Sprague 196P

Abstract: 196p sprague 131P 131P104X9600S0 106E 131P103X9600S02 131P223X9600S02 131P473X9600S02 vishay 196P
Contextual Info: Type 131P Vishay Sprague Film Snubber Capacitors Metal-Case, Paper/Polyester, Dielectric Extended Foil Electrodes FEATURES • • • • • PERFORMANCE CHARACTERISTICS Suggested replacement for Type 196P Moderate cost Small size High peak current ratings

Contextual Info: jjjm ÆmSmmkjjjjjj jmSSm MMMM „„„I L7C106 mm 256K x 4 Static RAM DEVICES INCORPORATED DESCRIPTION FEATURES □ 256K x 4 Static RAM with Chip Select Powerdown, Output Enable □ Auto-Powerdown Design □ Advanced CMOS Technology □ High Speed — to 17 ns maximum

Contextual Info: OSPRQGUE METAL-CASE FILM/FOIL CAPACITORS Type 103P Subminiature 10 Ampere Thru-Pass Paper Capacitors Features— • • • • • Bulkhead Mounting Excellent RFI Specs Hermetically Encased Low Inductance Connection Low Insertion Loss Electrical Specifications—

Contextual Info: Type 103P Vishay Sprague Paper Capacitors Metal Case, Film/Foil, 10 Ampere Thru-Pass, Subminiature FEATURES • Bulkhead mounting • Excellent RFI specifications • Hermetically encased • Low inductance connection • Low insertion loss PERFORMANCE CHARACTERISTICS

Contextual Info: METAL-CASE FILM CAPACITORS DEARBORN Type 259P Herm etically-Sealed M etal-Case Polycarbonate-Film AC Capacitors Features— • • • • • High S tability Sm all Size Low Pow er D issipation Low Dielectric A bsorption W ire Leads or Tab Term inals Electrical S pecifications—

Contextual Info: OSPRflGUE HIGH VOLTAGE ENERGY STORAGE CAPACITORS Type 205P High-Voltage Paper/Polyester Difilm Capacitors Features• • • • • Glass Case 2000 VDC To 10,000 VDC Two Temperature Ranges Long Leakage Path High Altitude Stability 2077 Electrical Specifications—

Contextual Info: METAL-CASE FILM CAPACITORS Type 259P Hermetically-Sealed Metal-Case Polycarbonate-Film AC Capacitors Features— • • • • • High S tability Sm all Size Low P ow er D issipation Low Dielectric A bsorption W ire Leads or Tab Term inals 2143 A Electrical S pecifications—

Contextual Info: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sh ee t SDC8UV7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UV7284-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as

Contextual Info: cP ÏITSIJ I A M. December 1997 Revision 2.0 data sheet SDC8UV6484- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UV6484-(67/84/100/125)T-S is a high performance, 64-megabtye synchronous, dynamic RAM module organized as

Contextual Info: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC8UL7284- 67/84/100/125 T-S 64MByte (8M x 72) CMOS Synchronous DRAM Module General Description The SDC8UL7284-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as

Q8-DQ15

Contextual Info: cP ÏITSIJ I A M. December 1997 Revision 2.0 data sheet SDC16UV6484- 67/84/100/125 T-S 128MByte (16M x 64) CMOS Synchronous DRAM Module General Description The SDC16UV6484-(67/84/100/125)T-S is a high performance, 128-megabtye synchronous, dynamic RAM module organized

Contextual Info: cP IITSU June 1998 Revision 1.1 data sheet PDC4 U V6414B-103T-S 32MByte 4M x 64 CMOS, PC/100 Synchronous DRAM Module General Description The PDC4UV6414B-103T-S is a high performance, 32-megabyte synchronous, dynamic RAM module organized as 4M words by 64 bits, in a 168-pin, dual-in-line memory module (DIMM) package.

Contextual Info: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sheet SDC8UL6414- 67/84/100/125 T-S 64MByte (8M x 64) CMOS Synchronous DRAM Module General Description The SDC8UL6414-(67/84/100/125)T-S is a high performance, 64-megabyte synchronous, dynamic RAM module organized as

Contextual Info: cP ÏITSIJ I A M. Dec. 1997 Revision 2.0 data sh ee t SDC16UL7284- 67/84/100/125 T-S 128MByte (16M x 72) CMOS Synchronous DRAM Module General Description The SDC16UL7284-(67/84/100/125)T-S is a high performance, 128-megabyte synchronous, dynamic RAM module organized