107N20N Search Results
107N20N Price and Stock
Infineon Technologies AG IPB107N20NAATMA1MOSFET N-CH 200V 88A D2PAK |
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IPB107N20NAATMA1 | Digi-Reel | 2,300 |
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IPB107N20NAATMA1 | Reel | 20,000 | 111 Weeks | 1,000 |
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IPB107N20NAATMA1 | Cut Tape | 137 | 1 |
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IPB107N20NAATMA1 | 20,940 | 1 |
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IPB107N20NAATMA1 | 828 | 1 |
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IPB107N20NAATMA1 | 47,279 |
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IPB107N20NAATMA1 | Cut Tape | 176 | 0 Weeks, 1 Days | 1 |
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IPB107N20NAATMA1 | 6,499 |
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IPB107N20NAATMA1 | 4,500 |
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Infineon Technologies AG IPB107N20N3GATMA1MOSFET N-CH 200V 88A D2PAK |
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Distributors | Part | Package | Stock | Lead Time | Min Order Qty | Price | Buy | ||||
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IPB107N20N3GATMA1 | Digi-Reel | 1,981 | 1 |
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IPB107N20N3GATMA1 | Reel | 16 Weeks | 1,000 |
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IPB107N20N3GATMA1 | 4,014 |
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IPB107N20N3GATMA1 | Reel | 1,000 |
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IPB107N20N3GATMA1 | 208 | 2 |
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IPB107N20N3GATMA1 | 1 |
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IPB107N20N3GATMA1 | 574 |
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IPB107N20N3GATMA1 | Reel | 13,000 | 1,000 |
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IPB107N20N3GATMA1 | Cut Tape | 2,811 | 0 Weeks, 1 Days | 1 |
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IPB107N20N3GATMA1 | 17 Weeks | 1,000 |
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IPB107N20N3GATMA1 | 4,189 |
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IPB107N20N3GATMA1 | 35,500 |
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Infineon Technologies AG IPB107N20N3 GMOSFETs N-Ch 200V 88A D2PAK-2 OptiMOS 3 |
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IPB107N20N3 G | 8,576 |
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IPB107N20N3 G | Bulk | 2 Weeks | 1 |
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IPB107N20N3 G | 15,505 |
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IPB107N20N3 G | 38 |
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IPB107N20N3 G | 35,000 |
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Infineon Technologies AG IPB107N20NAXTMOSFETs N-Ch 200V 88A D2PAK-2 |
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IPB107N20NAXT | 3,847 |
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Infineon Technologies AG IPB107N20N3G |
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IPB107N20N3G | 30 | 1 |
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IPB107N20N3G | 48 |
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IPB107N20N3G | 4,949 |
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107N20N Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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107n20n
Abstract: 110N20N IPB107N20N3 IPP110N20N3 G DSV80 D88 z IPI110N20N3 IPI110N20N3 G IEC61249-2-21 PG-TO220-3
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IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n 110N20N IPP110N20N3 G DSV80 D88 z IPI110N20N3 G IEC61249-2-21 PG-TO220-3 | |
107n20nContextual Info: 107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A |
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IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 107n20n | |
107N20NA
Abstract: 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n
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IPB107N20NA IPP110N20NA IEC61249-2-21 PG-TO263-3 107N20NA PG-TO220-3 110N20NA 107N20NA 110N20NA 110N20N IPP110N20NA IPB107N20NA P-1031 107n20n | |
110N20N
Abstract: 107n20n D88 z IPB107N20N3G
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IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 107N20N PG-TO220-3 110N20N 107n20n D88 z IPB107N20N3G | |
110N20NContextual Info: 107N20N3 G IPP110N20N3 G IPI110N20N3 G OptiMOSTM3 Power-Transistor Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) V DS 200 V R DS(on),max (TO263) 10.7 mΩ ID 88 A • Very low on-resistance R DS(on) |
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IPB107N20N3 IPP110N20N3 IPI110N20N3 IEC61249-2-21 PG-TO263-3 PG-TO220-3 PG-TO262-3 110N20N | |
Contextual Info: 107N20NA OptiMOSTM3 Power-Transistor IPP110N20NA Product Summary Features • N-channel, normal level • Excellent gate charge x R DS on product (FOM) VDS 200 V RDS(on),max (TO263) 10.7 mW ID • Very low on-resistance R DS(on) 88 A • 175 °C operating temperature |
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IPB107N20NA IPP110N20NA IEC61249-2-21 PG-TO263-3 PG-TO220-3 107N20NA 110N20NA |