10GHZ Search Results

Contextual Info: SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-4000 Proposed 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses

Contextual Info: Micro Networks FREQUENCY SOURCES Micro Networks offers low jitter clock sources for use Key Features: in optical network OC-12, OC-48, & OC-192 , • Operating Frequencies 100MHz to >10GHz computer and instrumentation applications. • Fixed-frequency, Voltage Controlled (VCSO),

Contextual Info: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

7039a

Abstract: a1069
Contextual Info: EC3H07BA Ordering number : ENA1069 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H07BA UHF to S Band Low-Noise Amplifier and OSC Applications Features • • • • • • Low noise : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=10GHz typ (VCE=1V).

TUNABLE VCO 10GHZ

Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
Contextual Info: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a

LTC6409IUDB

Abstract: LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB
Contextual Info: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate

SN62 PB36 ag2

Abstract: MA4BN1840-1
Contextual Info: MA4BN1840-1 V2 Monolithic HMIC Integrated Bias Network 18 – 40 GHz Chip Layout Features • • • • • Broad Bandwidth Specified from 18 to 40 GHz Useable from 10GHz to 50GHz Extremely Low Insertion Loss. High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated

kf 8715

Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Contextual Info: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI

LT5570

Abstract: LTC5541 LT5579 LTC5540 LTC5543 LTC5542
Contextual Info: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range FEATURES n n n n n n n n n DESCRIPTION Frequency Range: 40MHz to 10GHz Linear Dynamic Range: Up to 57dB Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms Exceptional Accuracy Over Temperature: ±0.5dB Typ

CL05A

Contextual Info: CL Series Stackpole Electronics, Inc. Multilayer Chip Inductor Features: Resistive Product Solutions Provides tight tolerances and excellent Q values Tight physical dimension tolerances Stable inductance in high frequency circuits ~10GHz For inductance values outside those listed in the

2SC4873

Abstract: IC 2703 TRANSISTOR 10GHZ TRANSISTOR FOR 10GHz oscillator IS21E
Contextual Info: 2 S C 4 8 7 3 N PN Epitaxial Planar Silicon Transistor U H F ~ S Band low-noise amplifiers and oscillators T E N T A T I VE Features and Applications • Small noise figure: NF=1.4dB typ f=lGHz • High Power Gain : IS21e|* = 15dB typ (f=lGHz) • High cutoff frequency : fI = 10GHz typ

LEE-19

Abstract: LEE-29 LEE-39 LEE-49 LEE-59
Contextual Info: AMPLIFIERS Designer's Kit K1-LEE+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW EXPOSED METAL BOTTOM TOP VIEW DC to 8GHz LEE+ Features Wideband, 50Ω Up to +17.3dBm typ.output pwr. • Flat output power • Usability to 10GHz • • • •

Contextual Info: RFUV5945A RFUV5945A Low Noise MMIC VCO with Buffer Amplifier 10GHz to 16GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features            Integrated LPA Image Rejection Mixer LO Buffer Amplifier

DS110914

Contextual Info: RFRX1001 RFRX1001 10GHz to 15.4GHz GaAs MMIC 10GHz TO 15.4GHz GaAs MMIC IQ DOWNCONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm GND LOIN GND N/C Vd3 N/C 32 Features   RF Frequency=10GHz to 15.4GHz LO Frequency=6GHz to 19.4GHz  IF Frequency=DC to 4GHz

Contextual Info: NLB-300 Preliminary CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers

60N80

Contextual Info: MULTILAYER CERAMIC CHIP INDUCTORS HIGH FREQUENCY PERFORMANCE MHI SERIES RoHS RESISTORS CAPACITORS COILS DELAY LINES L Term.W is RoHS compliant & 260°C compatible T t Wide range - 0.6nH to 470nH, up to 10GHz 420mA Advanced monolithic construction especially suited for high

4N 7

Contextual Info: MULTILAYER CERAMIC CHIP INDUCTORS HIGH FREQUENCY PERFORMANCE MHI SERIES RoHS RESISTORS CAPACITORS COILS DELAY LINES L Term.W is RoHS compliant & 260°C compatible T t Wide range - 0.6nH to 470nH, up to 10GHz 420mA Advanced monolithic construction especially suited for high

ha6007

Contextual Info: HBH 10.0 – 13.0 GHz Variable Gain Amplifier PRELIMINARY Microwave GmbH HA6007 General Description The HA6007 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier

Contextual Info: SRF11B09-010-1 SRF11B09-010 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5371, REV - 8GHz to 10GHz Low Noise Amplifier Features •8 GHz to 10 GHz Frequency Range Typical Noise Figure < 1.2 dB Typical Gain 25 dB Gain Flatness < ± 1.5 dB

zo 107

Abstract: zo 107 MA ZO 109 zo 109 ma
Contextual Info: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz

Contextual Info: Ordering number : ENA1922 MCH4016 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance

Contextual Info: Ordering number : ENA1912 MCH4017 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=17dB typ (f=1GHz) Halogen free compliance

2SC5540

Abstract: TA-1682
Contextual Info: Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions • High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ f=1GHz . · Low noise : NF=1.3dB typ (f=1GHz).

sanyo 103 490 0220

Abstract: 2SC5646
Contextual Info: Ordering number : ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier andOSC Applications Features • • unit : mm 2159 [2SC5646] 1.4 0.25 0.1 3 0.8 • Low-noise use : NF=1.5dB typ f=2GHz . High cut-off frequency : fT=10GHz typ (VCE=1V).