DS1402-DR8
Abstract: RJ11 female socket inverted 74HC125 diode 1n4002 advantages rj11 to db9 DS1961S DS1963S DS89C420 DS9093A DS9097U
Text: DSECASH eCash Evaluation Kit www.maxim-ic.com Figure 1. eCash Evaluation Board GENERAL DESCRIPTION The eCash Evaluation Kit demonstrates the speed, reliability, and security of a SHA-1 based iButton eCash system. The provided eCash debit board is a complete stand-alone module that will perform
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100ms.
DS1963S
DS1961S
DS9093A
DS1402sue
4D660A0100BEED520001040094CE0000000000E3F
2180104004AE1520001040094CEAAAAAAAAAAAAAA
18F6AA0200000043
RD0268
DS1402-DR8
RJ11 female socket inverted
74HC125
diode 1n4002 advantages
rj11 to db9
DS1961S
DS1963S
DS89C420
DS9093A
DS9097U
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KMF350
Abstract: No abstract text available
Text: SP EC IFIC A TIO N S VOLTAGE 5 0 0 V a c FREQ U EN C Y 5 0 / 6 0 H z C U RR EN T 5 0 A @ 40"C TEM PERA T U RE - 2 5 TO 10CTC LEA KA G E C U RR EN T 9 0 m A @ 5 0 0 V 50H z HUMIDITY 9 0 % RH N O N -C O N D E N SIN G VIBRATION 1 0 - 2 0 0 H Z 1.8G SU RG E 4 0 0 0 V p k 1.2/50jus
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500Vac
50/60Hz
10CTC
10-200HZ
4000Vpk
2/50jus
2250Vac/1
10sqmm
KMF350-GS
KMF350
KMF350
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X167
Abstract: No abstract text available
Text: 167 x_ J 32 i C rSl o o o l O O O SPECIFICATIONS VOLTAGE 500Vac FREQUENCY 5 0 /6 0 H z CURRENT 10 A @ 40"C TEMPERATURE - 2 5 TO 10CTC LEAKAGE CURRENT 2 1 m A @ 5 0 0 V 5 0 H z HUMIDITY 90% RH N O N -C O N D E N S IN G VIBRATION 1 0 —2 0 0 H z 1.8G SURGE 4 5 0 0 V p k 1 . 2 / 5 0 ju s
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500Vac
50/60Hz
200Hz
4500Vpk
2/50jus
2250Vac/1
KMF310-GS
KMF31
X167
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Untitled
Abstract: No abstract text available
Text: SP EC IFIC A TIO N S VOLTAGE 5 0 0 V a c FREQ U EN C Y 5 0 / 6 0 H z C U RR EN T 3 6 A @ 40"C TEM PERA T U RE - 2 5 TO 10CTC LEA KA G E C U RR EN T 4 2 m A @ 5 0 0 V 50H z HUMIDITY 9 0 % RH N O N -C O N D E N SIN G VIBRATION 1 0 - 2 0 0 H Z 1.8G SU RG E 4 0 0 0 V p k 1.2/50jus
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500Vac
50/60Hz
10CTC
10-200HZ
4000Vpk
2/50jus
2250Vac/1
10sqmm
47juF
47juF:
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Untitled
Abstract: No abstract text available
Text: •HANDLING PRECAUTIONS A Types Lam ps/flat p a ck a g e s Soldering Iron Reflow soldering Dip soldering Tem perature at tip of iron: Pre-heating: 10CTC max. R e sin surface 300°C max. temperature 6 0 sec. max. (30 W max.) Bath tem perature: 260 C max.
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10CTC
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KMF318
Abstract: M06G KMF318-GS
Text: 7 •217- £ SPECIFICATIONS m y 42 VOLTAGE 500Vac FREQUENCY 5 0 /60H z CURRENT 18A @ 40"C TEMPERATURE - 2 5 TO 10CTC LEAKAGE CURRENT 30m A @ 50 0 V 50Hz HUMIDITY 9 0 % RH N O N-CONDENSING VIBRATION 10— 200H z 1.8G SURGE 4500Vpk 1.2/50jus ELECTRIC STRENGTH 2250Vac/1 min.
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500Vac
50/60Hz
10CTC
200Hz
4500Vpk
2/50jus
2250Vac/1
10sqmm
33xljuF
68juF:
KMF318
M06G
KMF318-GS
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POWER MOSFET Rise Time 1000V NS
Abstract: MOSFET 1000v 30a inverter circuit 200v to 100v mosfet 10a 500v mosfet 400 V 10A OM9027SP1 OM9028SP1 OM9029SP1 OM9030SP1 OM9Q27SP1
Text: OM9027SP1 OM9029SP1 OM9Q28SP1 OM9030SP1 UNCOMMITTED POWER MOSFET AND HIGH SPEED RECTIFIER IN 6-PIN PACKAGE 100V Thru 1000V, 4A To 30A Power MOSFET And High Speed Rectifier In One Package FEATURES • • • • • M O S F E T And Common Cathode Rectifier In O ne Package
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OM9027SP1
OM9029SP1
OM9Q28SP1
OM9030SP1
300/jsec,
100-TYP.
205Crawford
00011b3
POWER MOSFET Rise Time 1000V NS
MOSFET 1000v 30a
inverter circuit 200v to 100v
mosfet 10a 500v
mosfet 400 V 10A
OM9028SP1
OM9030SP1
OM9Q27SP1
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SAB 82258
Abstract: sab82257
Text: 4 7E D Device Specifications • fiSBSbGS SIEI1ENS DD330S1 1 « S IE G AKTI ENGESELLSCHAF Preliminary T - « 3 - 3 3 - l et SAB 82257 High-Performance DMA Controller for 16-Bit Microcomputer Systems SAB 82257 SAB 82257-6 8 MHz 6 MHz • • • • 16 Mbytes addressing range
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DD330S1
16-Bit
SAB82257
fl235b05
003310b
82257-N
Q67120-P176
82257-6-N
SAB 82258
sab82257
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smd marking YK
Abstract: 208H smd 1309
Text: 2. Sch em atic: 1. M echanical Dim ensions: 6 o- 3T 2T 4 3T o- 3. E lectrical Specification s: 25°C c 3.50 Max F req u en cy Insertion Range: 2 . 0 —2 8 0 M H z Loss: 3dB @ 2 .0 —2 8 0 M H z 2dB @ 3 .0 —1 5 0 M H z Ï 2Î 1 dB @ 5 .0 —10 0 M H z
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MIL-STD-202G,
UL94V-0
E151556
102mm)
0-280MHz
150MHz
100MHz
Jun-13-09
smd marking YK
208H
smd 1309
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pcm1700u
Abstract: No abstract text available
Text: B U R R -B R O W N •b PCM1700U PCM1700P ! b Dual 18-Bit Monolithic Audio DIGITAL-TO-ANALOG CONVERTER FEATURES DESCRIPTION • DUAL 18-BIT LOW-POWER MONOLITHIC AUDIO D/A CONVERTER • VERY LOW MAX THD+N: -92dB Without External Adjust • CO-PHASE, GLITCH-FREE +3V OR
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PCM1700U
PCM1700P
18-Bit
-92dB
PCM56P
and10
5M-1982.
PCM1700
pcm1700u
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l3103s
Abstract: No abstract text available
Text: 5 Bit Synchronous CPU Controller with Power Good and Current Limit Description The CS-5166 is a synchronous dual NFET Buck Regulator Controller. It is designed to pow er the core logic of the latest high performance CPUs. It uses the V2 control method to achieve the
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CS-5166
CS-5166DW
l3103s
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IRF3710 equivalent
Abstract: No abstract text available
Text: International IO R Rectifi Of_ PRELIMINARY pd-9.i387a IRFI3710 HEXFET Power MOSFET • • • • • Advanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage Dist. = 4.8mm Fully Avalanche Rated V qss = 100V
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IRFI3710
O-220
IRF3710 equivalent
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irl3803
Abstract: diode SR 315
Text: P D - 9.1301 International [tcr]Rectifier IRL3803 PRELIMINARY HEXFET Power MOSFET • • • • • • • Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated
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IRL3803
O-220
irl3803
diode SR 315
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Untitled
Abstract: No abstract text available
Text: P D -9.1341 International Hk ]Rectifier IRF540N PRELIMINARY HEXFET Power MOSFET • Advanced Process Technology • Dynamic dv/dt Rating • 175°C Operating Temperature • Fast Switching • Fully Avalanche Rated V dss = 100V ^DS on = 0.052Q Id = Description
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IRF540N
T0-220
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Untitled
Abstract: No abstract text available
Text: Provisional Data Sheet No. PD-9.1555 International IÖR Rectifier HEXFET POWER MOSFET IRFNG40 N- CHA N N E L 1000 Volt, 3 .5 0 HEXFET H E X F E T techn o lo g y is th e key to Intern ation al Rectifier’s advanced line of power M O S F E T transis tors. The efficient geom etry achieves very low onstate resistance combined with high transconductance.
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IRFNG40
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24CT
Abstract: No abstract text available
Text: Fa OPTOELECTRONICS AIGaAs INFRARED EMITTING DIODE QEC121/122 PACKAGE DIMENSIONS DESCRIPTION The Q E C 12X is an 88 0 nm AIG aA s LED en capsulated in a clear, purple tinted, plastic T-1 package. FEATURES • Tight production Eedistribution. ■ Steel lead fram es for im proved reliability in solder
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QEC121/122
QSC11X
ST2131
24CT
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S005302
Abstract: V6313
Text: / M R C H I I - P S E M IC O N D U C T O R tm MM74HC51 • MM74HC58 Dual AND-OR-lnvert Gate • I ual AND-OR Gate General Description Features T h e s e g a te s u tiliz e a d v a n c e d s ilic o n -g a te C M O S te c h n o lo g y • T y p ic a l p ro p a g a tio n d e la y : 10 ns
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MM74HC51
MM74HC58
MM74HC51
S005302
V6313
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CLT2130
Abstract: CLT2160 CLT2150 CLT2140 T018
Text: L 40E » Ea DDD10D3 7 SENI "P41-UÌ FASCO INDS/ SENISYS CLT2130 CLT2140 CLT2150 G.r CLT2160 Silicon Planar Epitaxial Phototransistors ±.007 f— J83 N A — H J WINDOW [ I n t.o n H— ±.oio .0 4 0 i I .147 O I A _ 1 GENERAL DESCRIPTION — The Clairex CLT2130,
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GDD10D3
P41-U1
CLT2130
CLT2140
CLT2150
CLT2160
CLT2140,
CLT2150,
CLT2160
CLT2150
T018
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Untitled
Abstract: No abstract text available
Text: uuU SMJ3-13 LOW COST SURFACE MOUNT MIXER FOR SATCOM/WLL APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ LO: 3200 to 4200 MHz RF: 3200 to 4200 MHz IF: DC to 1000 MHz LO DRIVE: +13 dBm J-LEAD PACKAGE PATENT PENDING Outline Drawing Specifications* Characteristics Typical
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SMJ3-13
50-ohm
10CTC
1-800-WJ1
WJ-SMJ3-13
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Untitled
Abstract: No abstract text available
Text: MOTOROLA SEM IC O N D U C T O R TECHNICAL DATA Advance Information PhotoDarlington Detector T h e M R D 9 1 1 Silicon photodetector is a high sensitivity, m ulti-purpose photodetector. Its side-looking package is designed for use in P C board mounted interruptive, reflective, and light level se n sin g applications. The device is ideally
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10CTC
MRD911
MLED91
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d 379
Abstract: No abstract text available
Text: v C o rp . he diode experts SCOTTSDALE, A Z For more information call: SANTA ANA, CA 602 941-6300 SM 1.4KESDS.O thru SM 1.4KESD 170A SURFACE MOUNT Features 1 Protects S ensitive C ircu its From S h o rt D u ra tio n Fast Rise Tim e Tran sien ts such as Ele ctro -S tatic-D isch a rg e (ESD) or Electrical
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quD30A
4KESD33A
4KESD36A
4KESD40
4KESD40A
4KESD43
S043A
4KESD45A
4KESD48
4KESD48A
d 379
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contact bounce eliminator
Abstract: No abstract text available
Text: MC14490 < g MOTOROLA HEX CONTACT BOUNCE ELIMINATOR T h e M C 1 4 4 9 0 is c o n s t r u c t e d w i t h c o m p le m e n t a r y M O S e n h a n c e m e n t m o d e d e v ic e s , a n d is u s e d f o r t h e e li m in a t i o n o f e x tr a n e o u s
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bcx78
Abstract: BCX79-8
Text: MOTOROLA SC XSTRS/R 1EE F 0 I b3t,7E 54 OOÔS^Qb I r - a i- a / BCX78-7L,-8L,-9L,-1GL BCX79-7L,-8L,-9L,-10L - MAXIMUM RATINGS Sym bol BO X 78 BCX 79 U n it Collector-Em itter Voltage VCEO 32 45 Vdc Collector-B ase Voltage V CBO 32 45 Em itter-Base Voltage
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BCX78-7L
BCX79-7L
bcx78
BCX79-8
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Untitled
Abstract: No abstract text available
Text: CHIP MULTILAYER DELAY LINE I l militala Chip Multilayer Delay Line L D H Series Delay Line for Speed Data Processing Equipment Work Stations and High Frequency Measuring Equipment This Delay Line is developed by applying ceramic multilayering and via hole technology. It consists of copper
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LDH33
LDH36Type
LDH46Type
LDH33
LDH36
LDH46
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