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    10E 2W RESISTOR Search Results

    10E 2W RESISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    37-1409 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    37-2182 Coilcraft Inc Tuning tool Visit Coilcraft Inc Buy
    AA1A4M-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    AA1A3Q-A Renesas Electronics Corporation Built-in Resistor Bipolar Transistors, , / Visit Renesas Electronics Corporation
    GA4L3Z(0)-T1-AT Renesas Electronics Corporation Built-in Resistor Bipolar Transistors Visit Renesas Electronics Corporation

    10E 2W RESISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type Document Tags PDF

    Untitled

    Abstract: No abstract text available
    Text: HP06 Series High Power Resistors Specification Table Type Power Rating W Maximum Working Voltage (V) HP06 0.50 50 Maximum Overload Dielectric Voltage Withstanding Voltage (V) (V) 100 300 Temperature Range (°C) Ambient Temperature (°C) -55 to +155 70 Power Rating:


    Original     		PDF

    erf5e

    Abstract: ERF10E ERF2E
    Text: Wirewound Resistors Thin Type Wirewound Resistors (Thin Type) Type: ERF2E, 3E, 5E, 10E (2 W, 3 W, 5 W, 10 W) These low inductance and non-flammable resistors have been developed for the applications such as protection of output transistor in AV equipment and current detection of switching power supply.


    Original     		PDF

    HP06

    Abstract: 10e 2w resistor 670 OHM RESISTOR
    Text: HP06 Series High Power Resistors Specification Table Type Power Rating W Maximum Working Voltage (V) HP06 0.50 50 Maximum Overload Dielectric Voltage Withstanding Voltage (V) (V) 100 300 Temperature Range (°C) Ambient Temperature (°C) -55 to +155 70 Power Rating:


    Original     		PDF

    at24C04 code example assembly

    Abstract: 24cxx microchip spi e2prom 16k S-29530A S-29530ADPA S-29630A S-29630ADPA S630
    Text: Contents Features. 1 Pin Assignment . 1 Pin Functions . 1 Block Diagram. 2


    Original     		PDF

    at24C04 code example assembly

    Abstract: microchip spi e2prom 16k S-29530A S-29590A S-29590ADPA S-29630A S-29690A S-29690ADPA S-29X90A S690
    Text: Contents Features. 1 Pin Assignment . 1 Pin Functions . 1 Block Diagram. 2


    Original     		PDF

    pc817 sharp

    Abstract: EN55022 limits smd transistor E13 viper 22e flyback transformer eldor GRM40X7R104Z50 UEI 10SP050L Varistor uei SMD-C9 n27 ferrite
    Text: AN2264 APPLICATION NOTE Three-Phase SMPS for low power applications with VIPer12A Introduction Some industrial applications require a so called 'ultra-wide' input voltage range between 90 and 450Vac . Due to the variations of the main, input voltages up to 450Vac are typical in threephase applications. A maximum input voltage of 450Vac requires the use of very high voltage


    Original     		AN2264 VIPer12A 450Vac) 450Vac pc817 sharp EN55022 limits smd transistor E13 viper 22e flyback transformer eldor GRM40X7R104Z50 UEI 10SP050L Varistor uei SMD-C9 n27 ferrite PDF

    B4456

    Abstract: ac motor servo control circuit diagram motor dc gearbox 12V RS 591-663 RS SERVO CONTROL module servo motor control RC circuit 12v DC SERVO MOTOR CONTROL circuit rc servo motor torque speed SERVO CONTROL module wiper motor 12v dc
    Text: Issued March 1987 B4456 Servo control module S tock number 591-663 The RS servo control module is designed to power the 12V d.c. precision motor Stock number 336-292 and gearbox combination in either positional or velocity control modes. The unit is designed for incorporation into equipment


    Original     		B4456 00-120V 00-240V 50/60Hz B4456 ac motor servo control circuit diagram motor dc gearbox 12V RS 591-663 RS SERVO CONTROL module servo motor control RC circuit 12v DC SERVO MOTOR CONTROL circuit rc servo motor torque speed SERVO CONTROL module wiper motor 12v dc PDF

    capacitor 47nf

    Abstract: cfl ballast crest factor bridge rectifier 1A IR2520D irf ballast cfl ballast 14w cfl circuit transistor Electronic ballast 10uF 450v 1uF 400V capacitor 10 ELECTRONIC
    Text: Application Note AN-1073 Analysis of Different Solutions and Trade-off Cost vs. Power Factor Performance for Electronic Ballasts By Cecilia Contenti Table of Contents Page I. Introduction II. Low Power Factor


    Original     		AN-1073 IR2520D capacitor 47nf cfl ballast crest factor bridge rectifier 1A irf ballast cfl ballast 14w cfl circuit transistor Electronic ballast 10uF 450v 1uF 400V capacitor 10 ELECTRONIC PDF

    MOSFET B20 N03

    Abstract: A09 N03 MOSFET A42 BF 331 W01 SMD mosfet lt1093 1206A102 KAT2A AVX SRDSB10PC viper 22e RAS 05 e201 siliconix
    Text: OPTi Inc. OPTi 888 Tasman Drive Milpitas, CA 95035 408 486-8000 Fax: (408) 486-8001 Configuration Guide (Confidential) Product Name: Viper Xpress+ Debug Board Title: Debug Board Revision 0.0 Specification Date: January 21, 1997 Scope This document provides the specification, jumper list, rework


    Original     		PSNT21# PSNT22# PSNT31# PSNT32# MOSFET B20 N03 A09 N03 MOSFET A42 BF 331 W01 SMD mosfet lt1093 1206A102 KAT2A AVX SRDSB10PC viper 22e RAS 05 e201 siliconix PDF

    CXK79M36C164GB

    Abstract: CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M36C164GB-5 CXK79M72C164GB CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5
    Text: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words


    Original     		CXK79M72C164GB CXK79M36C164GB 256Kb 512Kb CXK79M72C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M36C164GB-5 CXK79M72C164GB-33 CXK79M72C164GB-4 CXK79M72C164GB-5 PDF

    CXK79M72C165GB-4

    Abstract: CXK79M36C165GB CXK79M36C165GB-3 CXK79M36C165GB-33 CXK79M72C165GB CXK79M72C165GB-3 CXK79M72C165GB-33
    Text: SONY ΣRAM CXK79M72C165GB / CXK79M36C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 3/33/4 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits) and the CXK79M36C165GB (organized as 524,288 words


    Original     		CXK79M72C165GB CXK79M36C165GB 256Kb 512Kb CXK79M72C165GB IDD2-33 250mA 280mA CXK79M72C165GB-4 CXK79M36C165GB CXK79M36C165GB-3 CXK79M36C165GB-33 CXK79M72C165GB-3 CXK79M72C165GB-33 PDF

    CXK79M36C160GB

    Abstract: CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5
    Text: SONY ΣRAM CXK79M72C160GB / CXK79M36C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits) and the CXK79M36C160GB (organized as 524,288 words


    Original     		CXK79M72C160GB CXK79M36C160GB 256Kb 512Kb CXK79M72C160GB CXK79M36C160GB CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M36C160GB-5 CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5 PDF

    CXK79M36C161GB

    Abstract: CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M36C161GB-5 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 diode 2U 6A
    Text: SONY ΣRAM CXK79M72C161GB / CXK79M36C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits) and the CXK79M36C161GB (organized as 524,288 words


    Original     		CXK79M72C161GB CXK79M36C161GB 256Kb 512Kb CXK79M72C161GB CXK79M36C161GB CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M36C161GB-5 CXK79M72C161GB-4 CXK79M72C161GB-5 diode 2U 6A PDF

    A7W17

    Abstract: CXK79M18C161GB CXK79M36C161GB CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 1K x 8 static ram IDD24
    Text: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36


    Original     		CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 256Kb 512Kb IDD-33 IDD-44 A7W17 CXK79M18C161GB CXK79M36C161GB CXK79M36C161GB-33 CXK79M36C161GB-4 CXK79M72C161GB CXK79M72C161GB-4 CXK79M72C161GB-5 1K x 8 static ram IDD24 PDF

    CXK79M72C164GB-33

    Abstract: CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5
    Text: SONY ΣRAM CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits), CXK79M36C164GB (organized as 524,288 words by 36


    Original     		CXK79M72C164GB CXK79M36C164GB CXK79M18C164GB 256Kb 512Kb IDD-33 IDD-44 CXK79M72C164GB-33 CXK79M18C164GB CXK79M36C164GB CXK79M36C164GB-33 CXK79M36C164GB-4 CXK79M72C164GB CXK79M72C164GB-4 CXK79M72C164GB-5 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY ΣRAM CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 18Mb 1x1Lp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C161GB (organized as 262,144 words by 72 bits), CXK79M36C161GB (organized as 524,288 words by 36


    Original     		CXK79M72C161GB CXK79M36C161GB CXK79M18C161GB 256Kb 512Kb CXK79M72C161GB -10uA -20uA PDF

    CXK79M72C164GB-28

    Abstract: CXK79M72C164GB-33 CXK79M36C164GB CXK79M72C164GB CXK79M72C164GB-3 BGA209
    Text: SONY ΣRAM CXK79M72C164GB / CXK79M36C164GB 28/3/33/4 18Mb 1x1Dp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 Preliminary Description The CXK79M72C164GB (organized as 262,144 words by 72 bits) and the CXK79M36C164GB (organized as 524,288 words


    Original     		CXK79M72C164GB CXK79M36C164GB 256Kb 512Kb CXK79M72C164GB CXK79M36C164GB IDD2-33 250mA 280mA CXK79M72C164GB-28 CXK79M72C164GB-33 CXK79M72C164GB-3 BGA209 PDF

    A7W17

    Abstract: CXK79M18C160GB CXK79M36C160GB CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5 2a 105
    Text: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36


    Original     		CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 256Kb 512Kb IDD-33 IDD-44 A7W17 CXK79M18C160GB CXK79M36C160GB CXK79M36C160GB-33 CXK79M36C160GB-4 CXK79M72C160GB CXK79M72C160GB-33 CXK79M72C160GB-4 CXK79M72C160GB-5 2a 105 PDF

    Untitled

    Abstract: No abstract text available
    Text: SONY ΣRAM CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 18Mb 1x1Lp HSTL High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C160GB (organized as 262,144 words by 72 bits), CXK79M36C160GB (organized as 524,288 words by 36


    Original     		CXK79M72C160GB CXK79M36C160GB CXK79M18C160GB 256Kb 512Kb CXK79M72C160GB -10uA -20uA PDF

    2U 73 diode

    Abstract: CXK79M18C165GB CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5
    Text: SONY ΣRAM CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 18Mb 1x1Dp LVCMOS High Speed Synchronous SRAMs 256Kb x 72 or 512Kb x 36 or 1Mb x 18 33/4/5 Preliminary Description The CXK79M72C165GB (organized as 262,144 words by 72 bits), CXK79M36C165GB (organized as 524,288 words by 36


    Original     		CXK79M72C165GB CXK79M36C165GB CXK79M18C165GB 256Kb 512Kb -10uA -20uA 2U 73 diode CXK79M18C165GB CXK79M36C165GB CXK79M36C165GB-33 CXK79M36C165GB-4 CXK79M72C165GB CXK79M72C165GB-33 CXK79M72C165GB-4 CXK79M72C165GB-5 PDF

    inmos t212 transputer

    Abstract: inmos transputer reference manual series T212 data IMST212 INMOS 0D0341C Inmos T212
    Text: INHOS CORP GOUriOS • 10E D I Chapter 5 4fl05baa 0DD3M0fl fl | j 'T - ¥ 1 - / 7 - S ’ / IMS T212 engineering data 165 INMOS CORP 7- W -/?.&/ IDE D § 4ö0Sböfl 0DD340C1 0 | 166 1 _ Introduction R e s e tA n a ly s e E r r o i"


    OCR Scan     		4fl05bflà IMST212 460Sfe Link123Special MemAO-15 MemDO-15 CORP211 inmos t212 transputer inmos transputer reference manual series T212 data INMOS 0D0341C Inmos T212 PDF

    siemens r10 core

    Abstract: P2616 300w 20A rf amplifier flyback transformer lg tdk P2616 UC3840
    Text: F= 7 SCS-THOMSON APPLICATION NOTE A WIDE RANGE INPUT DC-DC POWER CONVERTER INTRODUCTION This 300W DC-DC converter, shown in Fig. 1 has a flyback topology and works in continuous mode with single output and features primary side control. The Power switch is designed around an emitter


    OCR Scan     		SGSUC3840 SGS2N2222A SGS2N2907 SGSP301 IRFZ42 BUX12 350pF 220pF siemens r10 core P2616 300w 20A rf amplifier flyback transformer lg tdk P2616 UC3840 PDF

    ic HM 392 - 110

    Abstract: vitrohm 412 101 R15 N 470 KP
    Text: Vorzugswerte nach DIN/IEC 63: E6 E 12 E 24 E6 E 12 1.0 1.0 1.0 1.1 1.2 1.3 1.5 1.6 1.8 2.0 2.2 2.4 2.7 3.0 3.3 3.3 1.2 1.5 1.5 1.8 2.2 2 .2 2.7 E 48 E 96 E 192 E 48 E 96 100 100 100 162 162 101 102 105 102 105 165 169 169 174 109 110 110 110 178 115 115 182


    OCR Scan     		PDF

    IMST800

    Abstract: IMS T800 T800 transputer inmos transputer inmos T414 T800 IMS T414 inmos transputer reference manual Transputer T414 T800 equivalent
    Text: INMOS CORP IDE D | MfiOBbaa QDQ32fia 5 I DffimoS Chapter 3 T - 4 1 - 1 7 -5 7 • IMS T800 engineering data 45 iNnos T - * ¿ 4 - /? - & corp / ioE d | M a o 2 t,aa □ o o 3 5 a ci m | 46 1 Introduction vcc GND C a p P lu s C a p M in u s R eset A n a ly s e


    OCR Scan     		02baa -Link123Special EventAc70 000000001A IMST800 IMS T800 T800 transputer inmos transputer inmos T414 T800 IMS T414 inmos transputer reference manual Transputer T414 T800 equivalent PDF