10FEB2009 Search Results

Contextual Info: SN74AHC1G04ĆQ1 SINGLE INVERTER GATE SCLS540A − AUGUST 2003 − REVISED APRIL 2008 D Qualified for Automotive Applications D ESD Protection Exceeds JESD 22 D D ±8-mA Output Drive at 5 V D Latch-Up Performance Exceeds 250 mA Per − 1500-V Human-Body Model A114-A

ISO103

Contextual Info: ISO103 ISO 103 Low-Cost, Internally Powered ISOLATION AMPLIFIER FEATURES APPLICATIONS ● SIGNAL AND POWER IN ONE DOUBLE-WIDE 0.6" SIDE-BRAZED PACKAGE ● 5600Vpk TEST VOLTAGE ● 1500Vrms CONTINUOUS AC BARRIER RATING ● WIDE INPUT SIGNAL RANGE: –10V to +10V

Contextual Info: TPS62270, TPS62272 TPS62273 www.ti.com . SLVS799C – NOVEMBER 2007 – REVISED JANUARY 2009 2.25 MHz 400-mA Step Down Converter With Selectable VOUT

SPZB250 USB coordinator

Abstract: 3-axis accelerometer 3 axis Accelerometers for rotation sensing LIS3LV02DL Program zigbee interfacing with pc AN2381 oem accelerometer SPZB250 3-axis Accelerometer filter aircraft storage batteries
Contextual Info: UM0562 User manual SPMB250-A1EVAL demonstration kit user manual and installation guide Introduction The SPMB250-A1 is a ready-to-use wireless acceleration sensor based on a 802.15.4compliant radio transceiver. The integration of two SPMB250-A1 modules together with an 802.15.4 ZigBee -based

K 2411 equivalent

Abstract: M48T18 M4T28-BR12SH M4T32-BR12SH SOH28 DS1643 M48T08 M48T08Y
Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

AN2381

Abstract: SPZB250 SPZB250 USB coordinator LIS3LV02DL SN250 SPMB250-A1 Introduction to accelerometers
Contextual Info: UM0562 User manual SPMB250-A1EVAL demonstration kit user manual and installation guide Introduction The SPMB250-A1 is a ready-to-use wireless acceleration sensor based on a 802.15.4compliant radio transceiver. The integration of two SPMB250-A1 modules together with an 802.15.4 ZigBee -based

Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • ■ Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

Contextual Info: TPS61220 TPS61221 TPS61222 www.ti.com . SLVS776 – JANUARY 2009 LOW INPUT VOLTAGE STEP-UP CONVERTER IN 6 PIN SC-70 PACKAGE

NAND512R3A2D

Abstract: NAND512W3A2D NAND512W3A2 NI3087 t 0433 transistor
Contextual Info: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

ICS9P750CF

Abstract: ICS954108CFLF ICS954103efln ics954108 ICS950816AGT ICS9176CM-03 ICS95 ICS954103EF ICS9P750CFT ICS950815BG
Contextual Info: Integrated Device Technology, Inc. 6024 Silver Creek Valley Road, San Jose, CA 95138 Phone #: 408 284-8200 PRODUCT DISCONTINUANCE NOTICE (PDN) PDN #: Issue Date: Contact: Title: Phone #: Fax #: E-mail: K-08-07R1 10-Feb-2009 Last Buy Deadline for Submission of Order:

Contextual Info: TS3USB221 www.ti.com. SCDS220F – NOVEMBER 2006 – REVISED NOVEMBER 2008 HIGH-SPEED USB 2.0 480-Mbps 1:2 MULTIPLEXER/DEMULTIPLEXER SWITCH

N690A

Abstract: STN690A voltage regulator sot 223 ST IC Marking
Contextual Info: STN690A High performance low voltage NPN transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER ■ SOT-223 plastic package for surface mounting

Contextual Info: 2 THIS DRAWI NG IS UNPUBLISHED. C O P Y R I G H T 20 R E L E A S E D FOR P U B L I C A T I O N BY TYCO E L E C T R O N I C S C O R P O R A T I O N . A L L 20 LOC DI M -£3- 00 ES R 1G H T S R E S E RV E D. L ± R EV 1S I O N S DIST P LTR DESCRIPTION DATE DWN

M48T08

Abstract: M48T08Y M48T18 DS1643 M4T28-BR12SH M4T32-BR12SH SOH28
Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

semikron automotive inverter

Abstract: G3P3M25N120 600v 20a IGBT SEMITOP 1 Package STG3P3M25N120
Contextual Info: STG3P3M25N120 3-phase inverter IGBT - SEMITOP 3 module Preliminary Data Features • Low on-voltage drop VCE(sat ■ Low CRES / CIES ratio (no cross-conduction susceptbility) ■ Very soft ultra fast recovery antiparallel diode ■ Frequency operation up to 40 KHz

NAND512W3A2D

Abstract: NAND512R3A2D
Contextual Info: NAND512xxA2D 512-Mbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features „ „ High density SLC NAND flash memories – 512 Mbit memory array – Cost effective solutions for mass storage applications NAND interface – x8 or x16 bus width

Contextual Info: STN690A High performance low voltage NPN transistor Features • Very low collector to emitter saturation voltage ■ DC current gain, hFE > 100 ■ 3 A continuous collector current ■ 40 V breakdown voltage V BR CER ■ SOT-223 plastic package for surface mounting

CNC MACHINE ELECTRICAL DIAGRAM

Contextual Info: TS5A22366 www.ti.com . SCDS262 – JANUARY 2009 0.7-Ω DUAL SPDT ANALOG SWITCH

Contextual Info: SN75LVDS83 FlatLink TRANSMITTER SLLS271H − MARCH 1997 − REVISED JULY 2006 D 4:28 Data Channel Compression at up to D D D D D D D D D D D D D 238 MBytes/s Throughput Suited for SVGA, XGA, or SXGA Display Data Transmission From Controller to Display With Very Low EMI

M48T08

Abstract: STMicroelectronics K 2411 equivalent
Contextual Info: M48T08 M48T08Y, M48T18 5 V, 64 Kbit 8 Kb x 8 TIMEKEEPER SRAM Features • Integrated ultra low power SRAM, real-time clock, power-fail control circuit, and battery ■ BYTEWIDE RAM-like clock access ■ BCD coded year, month, day, date, hours, minutes, and seconds

ARP-GF

Abstract: 6m160 30 posn
Contextual Info: 4 RELEASED FOR PUBLICATION THIS DRAWING IS UNPUBLISHED. COPYRIGHT - BY TYCO ELECTRONICS CORPORATION. LOC ALL RIGHTS RESERVED. DIST R E V IS IO N S DW LTR A DESCRIPTION DATE DWN SC WK 26FEB09 REVISED E C R — 0 9 — 0 0 4 5 0 5 APVD D D 71.8±0.20 C ALL SOLDERING LEADS AND LATCH FEET

Contextual Info: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface

zm7300kithks

Abstract: diode 10441 zm7308g 400pf ZM7332G MO-220 VMMD-3
Contextual Info: ZM7300G Series Digital Power Manager Data Sheet Member of the Family Features • • • • • • Applications • • • Low voltage, high density systems utilizing TM Z-One Digital Intermediate Bus Architectures Broadband, networking, optical, and wireless

t 0433 transistor

Abstract: NAND512R3A2D
Contextual Info: NAND512xxA2D NAND01GxxA2C 512-Mbit, 1-Gbit, 528-byte/264-word page, 1.8 V/3 V, SLC NAND flash memories Features ● ● High density SLC NAND flash memories – 512-Mbit, 1-Gbit memory array – Cost effective solutions for mass storage applications NAND interface