Untitled
Abstract: No abstract text available
Text: SUF-4000 0.15GHz to 10GHz, Cascadable pHEMT MMIC Amplifier SUF-4000 Proposed 0.15GHz to 10GHz, CASCADABLE pHEMT MMIC AMPLIFIER Package: 0.88mmx0.80mm Product Description Features RFMD’s SUF-4000 is a monolithically matched broadband high IP3 gain block covering 0.15GHz to 10GHz. This pHEMT FET-based amplifier uses
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SUF-4000
15GHz
10GHz,
88mmx0
SUF-4000
10GHz.
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Untitled
Abstract: No abstract text available
Text: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB
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RFHA1101D
10GHz
14GHz
DS110630
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7039a
Abstract: a1069
Text: EC3H07BA Ordering number : ENA1069 SANYO Semiconductors DATA SHEET NPN Epitaxial Planar Silicon Transistor EC3H07BA UHF to S Band Low-Noise Amplifier and OSC Applications Features • • • • • • Low noise : NF=1.5dB typ f=2GHz . High cutoff frequency : fT=10GHz typ (VCE=1V).
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EC3H07BA
ENA1069
10GHz
S21e2
UL94HB)
A1069-7/7
7039a
a1069
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TUNABLE VCO 10GHZ
Abstract: MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT 0.18 um CMOS VCO 10GHZ oscillator 8563E spectrum analyzer
Text: A 10GHz CMOS Distributed Voltage Controlled Oscillator1 Hui Wu and Ali Hajimiri Department of Electrical Engineering, California Institute of Technology, Pasadena, CA 91125, USA Abstract A 10 GHz CMOS distributed voltage controlled oscillator DVCO is designed in a 0.35µm BiCMOS process technology using only CMOS transistors. The oscillator achieves a
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10GHz
TUNABLE VCO 10GHZ
MICROWAVE POWER TRANSISTOR IMPEDANCE MEASUREMENT
0.18 um CMOS
VCO 10GHZ oscillator
8563E spectrum analyzer
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LTC6409IUDB
Abstract: LTC6409 LTC2262-14 LTC6409C LTC6409CUDB LTC6409H LTC6409HUDB Marking C4 LTC6409UDB
Text: LTC6409 10GHz GBW, 1.1nV/√Hz Differential Amplifier/ADC Driver Description Features 10GHz Gain-Bandwidth Product n 88dB SFDR at 100MHz, 2V P-P n 1.1nV/√Hz Input Noise Density n Input Range Includes Ground n External Resistors Set Gain Min 1V/V n 3300V/µs Differential Slew Rate
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LTC6409
10GHz
100MHz,
10-Lead
8dB/14dB/20dB/26dB
LTC6401-20/LTC6401-26
LTC6406/LTC6405
70dBc/
65dBc
LTC6409IUDB
LTC6409
LTC2262-14
LTC6409C
LTC6409CUDB
LTC6409H
LTC6409HUDB
Marking C4
LTC6409UDB
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SN62 PB36 ag2
Abstract: MA4BN1840-1
Text: MA4BN1840-1 V2 Monolithic HMIC Integrated Bias Network 18 – 40 GHz Chip Layout Features • • • • • Broad Bandwidth Specified from 18 to 40 GHz Useable from 10GHz to 50GHz Extremely Low Insertion Loss. High RF-DC Isolation Rugged, Fully Monolithic, Glass Encapsulated
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MA4BN1840-1
10GHz
50GHz
MA4BN1840-1
SN62 PB36 ag2
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kf 8715
Abstract: fiber optic FM Modulator gilbert cell sum RF TRANSISTOR 10GHZ FM Modulator 2GHz rf digital modulators ic 50E08 stub tuner matching 500E HFA3101
Text: HFA3101 S E M I C O N D U C T O R Gilbert Cell UHF Transistor Array July 1995 Features Description • High Gain Bandwidth Product fT . . . . . . . . . . . 10GHz The HFA3101 is an all NPN transistor array configured as a Multiplier Cell. Based on Harris bonded wafer UHF-1 SOI
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HFA3101
10GHz
HFA3101
10GHz)
390nH
825MHz
900MHz
75MHz
76MHz
kf 8715
fiber optic FM Modulator
gilbert cell sum
RF TRANSISTOR 10GHZ
FM Modulator 2GHz
rf digital modulators ic
50E08
stub tuner matching
500E
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LT5570
Abstract: LTC5541 LT5579 LTC5540 LTC5543 LTC5542
Text: LTC5582 40MHz to 10GHz RMS Power Detector with 57dB Dynamic Range FEATURES n n n n n n n n n DESCRIPTION Frequency Range: 40MHz to 10GHz Linear Dynamic Range: Up to 57dB Accurate RMS Power Measurement of High Crest Factor Modulated Waveforms Exceptional Accuracy Over Temperature: ±0.5dB Typ
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LTC5582
40MHz
10GHz
DFN10
26dBm,
190mA
14GHz,
LT5570
LTC5541
LT5579
LTC5540
LTC5543
LTC5542
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CL05A
Abstract: No abstract text available
Text: CL Series Stackpole Electronics, Inc. Multilayer Chip Inductor Features: Resistive Product Solutions Provides tight tolerances and excellent Q values Tight physical dimension tolerances Stable inductance in high frequency circuits ~10GHz For inductance values outside those listed in the
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10GHz)
CL05A
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LEE-19
Abstract: LEE-29 LEE-39 LEE-49 LEE-59
Text: AMPLIFIERS Designer's Kit K1-LEE+ MINI-CIRCUITS DESIGNER'S KITS THE SOLUTION ! ENLARGED VIEW EXPOSED METAL BOTTOM TOP VIEW DC to 8GHz LEE+ Features Wideband, 50Ω Up to +17.3dBm typ.output pwr. • Flat output power • Usability to 10GHz • • • •
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10GHz
LEE-19+
33dBm
M100351
LEE-19
LEE-29
LEE-39
LEE-49
LEE-59
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Untitled
Abstract: No abstract text available
Text: RFUV5945A RFUV5945A Low Noise MMIC VCO with Buffer Amplifier 10GHz to 16GHz GaAs MMIC IQ UPCONVERTER Package: QFN, 32-Pin, 5mm x 5mm x 0.95mm N/C GND 32 Features Integrated LPA Image Rejection Mixer LO Buffer Amplifier
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RFUV5945A
RFUV5945A
10GHz
16GHz
32-Pin,
DS110331
100nF
10000pF
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DS110914
Abstract: No abstract text available
Text: RFRX1001 RFRX1001 10GHz to 15.4GHz GaAs MMIC 10GHz TO 15.4GHz GaAs MMIC IQ DOWNCONVERTER Package: QFN, 32-Pin, 5mmx5mmx0.95mm GND LOIN GND N/C Vd3 N/C 32 Features RF Frequency=10GHz to 15.4GHz LO Frequency=6GHz to 19.4GHz IF Frequency=DC to 4GHz
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RFRX1001
10GHz
RFRX1001
32-Pin,
16dBm
15dBc
10Evaluation
DS110914
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Untitled
Abstract: No abstract text available
Text: NLB-300 CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers LMDS/UNII/VSAT/WLAN/Cellular/DWDM
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NLB-300
NLB-300
10GHz
10GHz
14GHz
15GHz
20GHz
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Untitled
Abstract: No abstract text available
Text: NLB-300 Preliminary CASCADABLE BROADBAND GaAs MMIC AMPLIFIER DC TO 10GHz Typical Applications • Narrow and Broadband Commercial and • Gain Stage or Driver Amplifiers for MWRadio/Optical Designs PTP/PMP/ Military Radio Designs • Linear and Saturated Amplifiers
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NLB-300
NLB-300
10GHz
10GHz
14GHz
15GHz
20GHz
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4N 7
Abstract: No abstract text available
Text: MULTILAYER CERAMIC CHIP INDUCTORS HIGH FREQUENCY PERFORMANCE MHI SERIES RoHS RESISTORS CAPACITORS COILS DELAY LINES L Term.W is RoHS compliant & 260°C compatible T t Wide range - 0.6nH to 470nH, up to 10GHz 420mA Advanced monolithic construction especially suited for high
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470nH,
10GHz
420mA
MHI0201
10Kpcs/reel
FA094A
GF-061.
4N 7
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ha6007
Abstract: No abstract text available
Text: HBH 10.0 – 13.0 GHz Variable Gain Amplifier PRELIMINARY Microwave GmbH HA6007 General Description The HA6007 is a integrated GaAs high gain, low noise amplifier covering the frequency range from 10GHz to 13GHz. Low noise, high gain and high output power makes this device an ideal choice as an input amplifier
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HA6007
HA6007
10GHz
13GHz.
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Untitled
Abstract: No abstract text available
Text: SRF11B09-010-1 SRF11B09-010 SENSITRON SEMICONDUCTOR TECHNICAL DATA DATASHEET 5371, REV - 8GHz to 10GHz Low Noise Amplifier Features •8 GHz to 10 GHz Frequency Range Typical Noise Figure < 1.2 dB Typical Gain 25 dB Gain Flatness < ± 1.5 dB
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SRF11B09-010-1
SRF11B09-010
10GHz
SRF11B09-10
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zo 107
Abstract: zo 107 MA ZO 109 zo 109 ma
Text: Very Wideband RF Choke 50Ω TCCH-80+ 50 to 8200 MHz Maximum Ratings Features Operating Temperature • very broadband • miniature size, 0.15"x0.15" • low parasitic capacitance 0.1 pf typ. • effective parallel resistance, Rch 500 ohm typ. • usable up to 10GHz
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TCCH-80+
10GHz
GU1041
2002/95/EC)
zo 107
zo 107 MA
ZO 109
zo 109 ma
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1922 MCH4016 RF Transistor http://onsemi.com 12V, 30mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=18dB typ (f=1GHz) Halogen free compliance
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ENA1922
MCH4016
10GHz,
10GHz
A1922-10/10
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Untitled
Abstract: No abstract text available
Text: Ordering number : ENA1912 MCH4017 RF Transistor http://onsemi.com 12V, 100mA, fT=10GHz, NPN Single MCPH4 Features • • • • Low-noise use : NF=1.2dB typ f=1GHz High cut-off frequency : fT=10GHz typ (VCE=5V) High gain : |S21e|2=17dB typ (f=1GHz) Halogen free compliance
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ENA1912
MCH4017
100mA,
10GHz,
10GHz
A1912-9/9
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2SC5540
Abstract: TA-1682
Text: Ordering number:ENN6280 NPN Epitaxial Planar Silicon Transistor 2SC5540 UHF to S Band Low-Noise Amplifier and OSC Applications Package Dimensions • High cutoff frequency : fT=10GHz typ. · High gain : S21e2=13dB typ f=1GHz . · Low noise : NF=1.3dB typ (f=1GHz).
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ENN6280
2SC5540
10GHz
S21e2
2SC5540]
2SC5540
TA-1682
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sanyo 103 490 0220
Abstract: 2SC5646
Text: Ordering number : ENN6606 2SC5646 NPN Epitaxial Planar Silicon Transistor 2SC5646 UHF to S Band Low-Noise Amplifier andOSC Applications Features • • unit : mm 2159 [2SC5646] 1.4 0.25 0.1 3 0.8 • Low-noise use : NF=1.5dB typ f=2GHz . High cut-off frequency : fT=10GHz typ (VCE=1V).
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ENN6606
2SC5646
2SC5646]
10GHz
S21e2
sanyo 103 490 0220
2SC5646
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Untitled
Abstract: No abstract text available
Text: Micro Networks FREQUENCY SOURCES Micro Networks offers low jitter clock sources for use Key Features: in optical network OC-12, OC-48, & OC-192 , • Operating Frequencies 100MHz to >10GHz computer and instrumentation applications. • Fixed-frequency, Voltage Controlled (VCSO),
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OC-12,
OC-48,
OC-192)
100MHz
10GHz
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2SC4873
Abstract: IC 2703 TRANSISTOR 10GHZ TRANSISTOR FOR 10GHz oscillator IS21E
Text: 2 S C 4 8 7 3 N PN Epitaxial Planar Silicon Transistor U H F ~ S Band low-noise amplifiers and oscillators T E N T A T I VE Features and Applications • Small noise figure: NF=1.4dB typ f=lGHz • High Power Gain : IS21e|* = 15dB typ (f=lGHz) • High cutoff frequency : fI = 10GHz typ
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2SC4873
IS21e|
10GHz
2SC4873
IC 2703
TRANSISTOR 10GHZ
TRANSISTOR FOR 10GHz oscillator
IS21E
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