10GHZ PIN DIODE Search Results

Contextual Info: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4GP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

MA4GFCP910

Abstract: PIN diodes 10GHZ
Contextual Info: MA4AGP907 MA4AGFCP910 M/A-COM Products AlGaAs Flip Chip PIN Diodes Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V3 RoHS Compliant Chip Dimensions MA4AGP907 and MA4GFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

MA4GP907

Abstract: 10ghz pin diode
Contextual Info: MA4GP907 GaAs Flip Chip PIN Diode M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V6 RoHS Compliant Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL

MA4AGFCP910

Abstract: MA4AGP907 MA4AGSBP907 MADP
Contextual Info: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed

MA4AGFCP910

Abstract: MA4AGP907 MA4AGSBP907
Contextual Info: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL

madp pin diode

Contextual Info: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes M/A-COM Products Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 RoHS Compliant Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

Contextual Info: MA4AGP907 MA4AGFCP910 AlGaAs Flip Chip PIN Diodes V4 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions MA4AGP907 and MA4AGFCP910 Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL

sensor radar 24ghz

Abstract: 24GHz Radar MASW-004240-13170W macom pin diode application radar sensor
Contextual Info: MASW-004240-13170W M/A-COM Products V1 HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required

radar sensor

Abstract: sensor radar 24ghz M541 24GHz Radar
Contextual Info: MASW-004240-13170W HMIC SP4T Surface Mount Silicon PIN Diode Switch with Integrated Bias Network V1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Operating Freq. 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required

Contextual Info: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode Features • •        M/A-COM Products Rev. 5 RoHS Compliant Mounting Side with Solder Bumps Solderable Bump Die Attach Low Series Resistance Ultra Low Capacitance

sensor radar 24ghz

Abstract: radar sensor MASW-004240-13170W M541 24GHz Radar
Contextual Info: MASW-004240-13170W HMIC SP4T Surface Mount Silicon PIN Diode Switch RoHS Compliant Rev. V1 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Frequency of Operation 10 ± 2GHz or 24 ± 2GHz Surface Mount Device Integrated Bias Network No Wire Bonds Required Low Current Consumption

Contextual Info: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Mounting Side with Solder Bumps Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed

Contextual Info: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ M/A-COM Products Rev. 4 RoHS Compliant Mounting Side with Solder Bumps Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency

6858 pin

Abstract: MA4AGSBP907 01346E
Contextual Info: MA4AGSBP907 AlGaAs Solder Bump Flip-Chip PIN Diode RoHS Compliant Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Rev. V4 Mounting Side with Solder Bumps Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed

MO-220

Abstract: AN0017 CHE1270 CHE1270-QAG esd protection smd
Contextual Info: CHE1270-QAG RoHS COMPLIANT 5-44GHz Detector GaAs Monolithic Microwave IC in SMD leadless package Description The CHE1270-QAG is a detector that integrates a matched detector diode Vdet and a reference diode (Vref). It is designed for a wide range of applications

MA4GP905

Abstract: M541 10ghz pin diode
Contextual Info: MA4GP905 GaAs RoHS Compliant Rev. V2 Beamlead PIN Diode Features MA4GP905 ♦ Low Series Resistance ♦ Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 3 Nanosecond Switching Speed ♦ Can be Driven by a Buffered +5V TTL ♦ Silicon Nitride Passivation

Contextual Info: MA4GP905 GaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features MA4GP905 ♦ Low Series Resistance ♦ Low Capacitance ♦ Millimeter Wave Switching & Cutoff Frequency ♦ 3 Nanosecond Switching Speed ♦ Can be Driven by a Buffered +5V TTL

IS10E

Abstract: Microwave PIN diode MA4AGBLP912 MA4AGBLP912 MA4AGBPL912
Contextual Info: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL

TUNNEL DIODE

Contextual Info: 10 Bit Programmable 60 dB Attenuator 0.5 GHz to 18.0 GHz 4.5 dB IL 0.06 dB Step 15 dBm P1dB TECHNICAL DATA SHEET PE70A6000 The PE70A6000 is a Non-Reflective 10 Bit Programmable 60 dB Pin Diode Attenuator with Step Resolution as Low as 0.06 dB over the Operating Frequency Range from 0.5 GHz to 18 GHz. The PE70A6000 is offered in a slim line housing measuring

beam lead PIN diode

Contextual Info: MA4AGBLP912 AlGaAs M/A-COM Products Rev. 2 RoHS Compliant Beamlead PIN Diode Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL

Contextual Info: 1,550nm Modulator Integrated DFB Laser FLD5F20NP-G FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection

MA4GP907

Contextual Info: MA4GP907 GaAs Flip Chip PIN Rev. V6 Features ♦ ♦ ♦ ♦ ♦ ♦ ♦ ♦ Chip Dimensions Low Series Resistance Ultra Low Capacitance Millimeter Wave Switching & Cutoff Frequency 2 Nanosecond Switching Speed Can be Driven by a Buffered TTL Silicon Nitride Passivation

photodiode 10Ghz PIN

Abstract: FLD5F20NP-C 10 gb laser diode
Contextual Info: 1,550nm Modulator Integrated DFB Laser FLD5F20NP-C FEATURES • Modulator Integrated DFB Laser Diode Module • CW operation of DFB laser section • Modulation voltage applied only to modulator section • High speed butterfly package with GPO connection

MA4AGBLP912

Abstract: PIN diodes 10GHZ
Contextual Info: MA4AGBLP912 AlGaAs Beamlead PIN Diode RoHS Compliant Features • •       Low Series Resistance Low Capacitance Millimeter Wave Switching & Cutoff Frequency 5 Nanosecond Switching Speed Can be Driven by a Buffered +5V TTL