FMMT593
Abstract: FMMT493
Text: SOT23 NPN SILICON PIANAR MEDIUM FMMT493 POWER TRANSISTOR ISSUE 3- NOVEMBER COMPLEMENTARY PARTMARKING 1995 TYPE - E 1 1 493 I RATINGS. I SYMBOL ] PARAMETER Collector-Base ! FMMT593 DETAIL - ABSOLUTE MAXIMUM I SOT23 VALUE 1 UNIT Voltage Collector-Emitter Voltage
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FMMT493
FMMT593
TamW250C
100MHz
10IMA
10tnA
10JmA
100mA
10IIA
FMMT593
FMMT493
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Untitled
Abstract: No abstract text available
Text: TOSHIBA 2SK2311 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE L2-,t -M O SV 2SK2311 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS INDUSTRIAL APPLICATIONS Unit in mm TO-220FL CHOPPER REGULATOR, DC-DC CONVERTER AND SWITCHING 10JMAX REGULATOR APPUCATIONS
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2SK2311
O-220FL
10JMAX
--25A,
--25C1
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Untitled
Abstract: No abstract text available
Text: PRELIMINARY m GM76FV16128/ GM76FU16128/ GM76FS16128 g m 76FR16128 131,072w o r d s x i6 b i t CMOS STATIC RAM LG S e m i c o n C o .,L t d . Description Features The G M 76FV 16128/ G M 76FU 16128/ G M 76FS16128/ •Power Supply V oltage G M 76FR 16128 is a 2,097,152 bits static random access
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GM76FV16128/
GM76FU16128/
GM76FS16128
76FR16128
76FS16128/
76FS16128
GM76FV16128
GM76FU16128
GM76FR16ld8
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BFT66
Abstract: BFT 66 S1 Q62702-F456 nf5102 6NF20 BA 758 BFT67 Q62702-F457 QQQM710
Text: asc » â23SbüS ÜGGM7Qâ 1 M S I E â BFT 66 BFT 67 Extremely Low Noise NPN Silicon Broadband Transistors r l_r SIEMENS AKTIENGESELLSCHAF BFT 6 6 and BFT 6 7 are epitaxial NPN silicon planar RF transistors in TO 7 2 case 1 8 A 4 DIN 4 1 8 7 6 ), intended for input stage applications in extremely low-noise broadband
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23SbQS
Q62702-F456
Q62702-F457
BFT66,
BFT67
103MHz
fi535b05
DQ0H715
BFT66
BFT67
BFT 66 S1
Q62702-F456
nf5102
6NF20
BA 758
Q62702-F457
QQQM710
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