10N6 Search Results

10N6 Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
TK110N65Z		Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 650 V, 24 A, 0.11 Ohm@10V, TO-247

10N6 Price and Stock

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Rochester Electronics LLC FQI10N60CTU MOSFET N-CH 600V 9.5A I2PAK
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	FQI10N60CTU	Tube	55,208		273	1 - 10 - 100 - 1000 $1.1 10000 $1.1	Buy Now
Infineon Technologies AG IGB10N60TATMA1 IGBT NPT FS 600V 20A TO263-3-2
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	IGB10N60TATMA1	Digi-Reel	3,623		1	1 $1.84 10 $1.17 100 $0.787 1000 $0.62266 10000 $0.62266	Buy Now
	IGB10N60TATMA1	Cut Tape	3,623		1	1 $1.84 10 $1.17 100 $0.787 1000 $0.62266 10000 $0.62266	Buy Now
	IGB10N60TATMA1	Reel	3,000		1,000	1 - 10 - 100 - 1000 $0.5698 10000 $0.46787	Buy Now
Avnet Americas	IGB10N60TATMA1	Reel		19 Weeks	1,000	1 - 10 - 100 - 1000 $0.4704 10000 $0.43123	Buy Now
Rochester Electronics	IGB10N60TATMA1		1,062		1	1 - 10 - 100 $0.6355 1000 $0.5275 10000 $0.4703	Buy Now
TME	IGB10N60TATMA1		497		1	1 $1.36 10 $1.1 100 $0.83 1000 $0.74 10000 $0.74	Buy Now
Chip One Stop	IGB10N60TATMA1	Cut Tape	935	0 Weeks, 1 Days	1	1 $0.623 10 $0.57 100 $0.822 1000 $0.702 10000 $0.668	Buy Now

EBV Elektronik	IGB10N60TATMA1			20 Weeks	1,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Cal-Chip Electronics CHV1210N630102JCT HVCAP1210 COG 1000PF 5% 630V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	CHV1210N630102JCT	Digi-Reel	3,000		1	1 $0.77 10 $0.47 100 $0.3112 1000 $0.2271 10000 $0.2271	Buy Now
	CHV1210N630102JCT	Cut Tape	3,000		1	1 $0.77 10 $0.47 100 $0.3112 1000 $0.2271 10000 $0.2271	Buy Now
	CHV1210N630102JCT	Reel	3,000		3,000	1 - 10 - 100 - 1000 - 10000 $0.20336	Buy Now
Cal-Chip Electronics CHV1210N630472JCT HVCAP1210 COG 4700PF 5% 630V
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	CHV1210N630472JCT	Reel	2,000		2,000	1 - 10 - 100 - 1000 - 10000 $0.2185	Buy Now
	CHV1210N630472JCT	Cut Tape	2,000		1	1 $0.82 10 $0.504 100 $0.335 1000 $0.24555 10000 $0.24555	Buy Now
onsemi NTP110N65S3HF MOSFET N-CH 650V 30A TO220-3
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	NTP110N65S3HF	Tube	800		1	1 $6.01 10 $6.01 100 $3.1722 1000 $2.92324 10000 $2.92324	Buy Now
Richardson RFPD	NTP110N65S3HF				800	1 - 10 - 100 - 1000 $2.92 10000 $2.92	Buy Now
Avnet Silica	NTP110N65S3HF			19 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
EBV Elektronik	NTP110N65S3HF			20 Weeks	50	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Flip Electronics	NTP110N65S3HF		35,270			1 - 10 - 100 - 1000 - 10000 -	Get Quote

Wuhan P&S	NTP110N65S3HF		606		1	1 $8.16 10 $8.16 100 $5.21 1000 $3.95 10000 $3.95	Buy Now

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10N6 Datasheets (5)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
10N60	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.92KB	9
10N60-A-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.92KB	9
10N60-B-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.91KB	9
10N60C5M	IXYS	CoolMOS Power MOSFET	Original	PDF	102.64KB	4
10N60L-A-TA3-T	Unisonic Technologies	10 Amps, 600/650 Volts N-CHANNEL POWER MOSFET	Original	PDF	233.93KB	9

10N6 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60at QW-R502-743	PDF
10n65 Abstract: tf 10n65 Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65 Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	10N65 10N65 QW-R502-588 tf 10n65	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N60K 10N60K 10N60KL-TF3-T 10N60KG-TF3-T O-220F 10N60KL-TF1-T 10N60KG-TF1-T O-22at QW-R502-743	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N65K Power MOSFET 10A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N65K is an N-channel Power MOSFET using UTC’s advanced technology to provide customers a minimum on-state resistance and superior switching performance, etc.	Original	10N65K 10N65K 10N65KL-TF3-T 10N65KG-TF3-T O-220F 10N65KL-TF1-T 10N65KG-TF1-hat QW-R02-755	PDF
10N60G Abstract: mosfet 10a 600v 10N60G-TF3-T utc 10n60l Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60 Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 10N60 is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have	Original	10N60 10N60 O-220 O-220F1 O-220F2 QW-R502-119 10N60G mosfet 10a 600v 10N60G-TF3-T utc 10n60l	PDF
Contextual Info: Photoelectric sensors FVDK 10N67Y0/S35A dimension drawing general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange adjustment	Original	10N67Y0/S35A 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N67YR dimension drawing 36,7 15,9 3,7 9,2 33,8 6,2 10 70,2 general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display	Original	10N67YR 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69YB dimension drawing general data photo actual range Sb FSE 200C1002 240 mm sensing distance Tw (FUE 200C1003) 60 mm light source pulsed blue LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69YB 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69YB dimension drawing general data photo actual range Sb FSE 200C1002 240 mm sensing distance Tw (FUE 200C1003) 60 mm light source pulsed blue LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69YB 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69Y0 Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display	Original	10N69Y0 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69Y0 dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display output indicator LED orange adjustment	Original	10N69Y0 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N67YS dimension drawing general data photo version slave actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange	Original	10N67YS 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N67Y0 dimension drawing 36,7 15,9 3,7 9,2 33,8 6,2 10 70,2 general data photo actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display	Original	10N67Y0 200C1002) 200C1003)	PDF
Contextual Info: Photoelectric sensors FVDK 10N69YR Lichtleitergeräte und Lichtleiter dimension drawing general data photo actual range Sb FSE 200C1002 1400 mm sensing distance Tw (FUE 200C1003) 340 mm light source pulsed red LED light indicator 1 x 3-digit display	Original	10N69YR 200C1002) 200C1003)	PDF

Contextual Info: Photoelectric sensors FVDK 10N67YS dimension drawing general data photo version slave actual range Sb FSE 200C1002 1200 mm sensing distance Tw (FUE 200C1003) 300 mm light source pulsed red LED light indicator 2 x 4-digit display output indicator LED orange	Original	10N67YS 200C1002) 200C1003)	PDF
Contextual Info: IXKP 10N60C5 Advanced Technical Information COOLMOS * Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 W N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge TO-220 AB D G D S G S Features MOSFET Conditions VDSS TVJ = 25°C	Original	10N60C5 O-220	PDF
10n60b Contextual Info: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 10N60B2D1 IC110 O-247 8-06B 405B2 10n60b	PDF
10n60p Abstract: d 1065 Contextual Info: PolarHVTM Power MOSFET IXTA 10N60P IXTI 10N60P IXTP 10N60P VDSS ID25 RDS on = 600 V = 10 A ≤ 740 mΩ Ω N-Channel Enhancement Mode Avalanche Rated Symbol Test Conditions VDSS VDGR TJ = 25° C to 175° C TJ = 25° C to 175° C; RGS = 1 MΩ 600 600 V V	Original	10N60P O-220 O-263 O-263) O-263 10n60p d 1065	PDF
10N60C Abstract: IXKP10N60C5 Contextual Info: IXKP 10N60C5 CoolMOS 1 Power MOSFET ID25 = 10 A VDSS = 600 V RDS on max = 0.385 Ω ) N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 AB G D S G S Features MOSFET Symbol Conditions VDSS TVJ = 25°C Maximum Ratings VGS	Original	10N60C5 O-220 20080523b 10N60C IXKP10N60C5	PDF
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 10N60K-MT Preliminary Power MOSFET 10A, 600V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 10N60K-MT is a high voltage and high current power MOSFET, designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high	Original	10N60K-MT 10N60K-MT QW-R205-022	PDF
Contextual Info: IXKP 10N60C5M CoolMOS 1 Power MOSFET ID25 = 5.4 A VDSS = 600 V RDS on) max = 0.385 Ω Fully isolated package N-Channel Enhancement Mode Low RDSon, High VDSS MOSFET Ultra low gate charge D TO-220 ABFP G D S G Preliminary data S Features MOSFET Symbol Conditions	Original	10N60C5M O-220 20090209d	PDF
Contextual Info: High Speed IGBT with Diode IXSH 10N60B2D1 IXSQ 10N60B2D1 Short Circuit SOA Capability VCES = 600 V I C25 = 20 A V CE sat = 2.5 V Preliminary Data Sheet D1 Symbol Test Conditions Maximum Ratings VCES TJ = 25°C to 150°C 600 V VCGR TJ = 25°C to 150°C; RGE = 1 MΩ	Original	10N60B2D1 IC110 8-06B 405B2	PDF
diode DSDI 9 Abstract: 10N60A IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A Contextual Info: □IXYS Contents Insulated Gate Bipolar Transistors IGBT Package style CE(aat) Type Page Tc = 25°C V 1. TO-247 AD 2. TO-220 AB 3. TO-264 AA 500 48 2.3 IXGH24N50B IXGH24N50BU1 4-5 6-7 500 75 2.3 IXGH50N50B 8-9 600 20 3.0 IXSH 10N60A 10-11 600 48 2.5 IXGH24N60B	OCR Scan	O-247 O-220 O-264 IXGH24N50B IXGH24N50BU1 IXGH50N50B 10N60A IXGH24N60B IXGH24N60BU1 IXGH50N60B diode DSDI 9 IXLN35N120AU1 diode DSDI 12 IXLH35N120A DSP8-12A a1931 DSP8-08AS 95-06DA IXln35N120A	PDF
10N60A Abstract: IGBT 10N60 10N6Q Contextual Info: nixYS ^ 10N60 IXGA/IXGH 10N60A \|g b t High speed IGBT VCES ^C25 v¥ CE sat 600 V 600 V 20 A 20 A 2.5 V 3.0 V Prelim inary data Symbol Test Conditions Maximum Ratings v CES ^ = 25°C to 150°C 600 V v CGR ^ = 25°C to 150°C; RGE = 1 MiJ 600 V v¥ g e s	OCR Scan	IXGH10N60 10N60A O-263 O-247 10N60 10N60A 10N60U1 10N60AU1 D94006DE, IGBT 10N60 10N6Q	PDF

10N6 Search Results

10N6 Result Highlights (1)

10N6 Price and Stock

Rochester Electronics LLC FQI10N60CTU

Infineon Technologies AG IGB10N60TATMA1

Cal-Chip Electronics CHV1210N630102JCT

Cal-Chip Electronics CHV1210N630472JCT

onsemi NTP110N65S3HF

10N6 Datasheets (5)

10N6 Datasheets Context Search

10n65

10N60G

10n60b

10n60p

10N60C

diode DSDI 9

10N60A