10N60M Search Results

10N60M2

Contextual Info: 10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID 10N60M2 650 V 0.6 Ω 7.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation

STD10N60M2

Abstract: STP10N60
Contextual Info: 10N60M2, 10N60M2, 10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB 3 Order codes 1 DPAK VDS @ TJmax RDS on max ID 650 V 0.6 Ω 7.5 A 10N60M2

Contextual Info: 10N60M2 N-channel 600 V, 0.580 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - production data Features Order code VDS @ TJmax RDS on max ID 10N60M2 650 V 0.660 Ω 5.5 A • Extremely low gate charge

Contextual Info: 10N60M2 N-channel 600 V, 0.580 Ω typ., 5.5 A MDmesh II Plus low Qg Power MOSFET in a PowerFLAT™ 5x6 HV package Datasheet - preliminary data Features Order code VDS @ TJmax RDS on max ID 10N60M2 650 V 0.608 Ω 5.5 A (1) 1. The value is rated according to Rthj-case and limited

STD10N60M2

Contextual Info: 10N60M2, 10N60M2, 10N60M2, 10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in D²PAK, DPAK, TO-220 and IPAK packages Datasheet − production data Features TAB TAB Order codes 3 VDS @ TJmax RDS on max ID 650 V

Contextual Info: 10N60M2 N-channel 600 V, 0.56 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFET in a TO-220FP package Datasheet − production data Features Order code VDS @ TJmax RDS on max ID 10N60M2 650 V 0.6 Ω 7.5 A • Extremely low gate charge • Lower RDS(on) x area vs previous generation

STF10N60M2

Contextual Info: 10N60M2, 10N60M2 N-channel 600 V, 0.550 Ω typ., 7.5 A MDmesh II Plus low Qg Power MOSFETs in TO-220FP and I²PAKFP packages Datasheet − production data Features Order codes VDS @ TJmax RDS on max ID 650 V 0.6 Ω 7.5 A 10N60M2 10N60M2 • Extremely low gate charge