10OMHZ Search Results
10OMHZ Datasheets Context Search
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Contextual Info: 33 HftR ? : 3 0 HA-5020/883 10OMHz Current Feedback Video Amplifier March1993 Features Description • This Circuit is Processed in Accordance to Mii-Std883 and Is Fully Conformant Under the Provisions of Paragraph 1.2.1. The HA-5020/883 is a wide bandwidth, high slew rate |
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HA-5020/883 10OMHz Mii-Std883 HA-5020/883 1-800-4-HARRIS | |
501RPContextual Info: HA5023/883 & W AR A D V A N C E IN FO RM ATIO N juiy 1994 Dual 10OMHz Video Current Feedback Amplifier Features Description This Circuit is Processed in Accordance to MIL-STD883 and is Fully Conform ant Under the Provisions of Paragraph 1.2.1. • W ide Unity Gain B a n d w id th . 125MHz |
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HA5023/883 10OMHz HA5023/883 HA-5020/883 501RP | |
Contextual Info: TEKTRONIX IN C / TRI ÚUINT SbE D • ÓTDÍaSlñ GD0Q3Ö0 T Q T R û T * 5 £ - l 5 le s a li ^ ' 9 a B i t L o g ic ÄB¥ÄM€E High Speed DRAM and SRAM Driver/Translator 10OMHZ Clock - 5 ns Delay Time 10G PicoLogic Family_ FEATURES 90 mA output capability for driving large |
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10OMHZ 050P3 0080P | |
Contextual Info: C IÏ H A R R IS H S EMI CONDUCTOR January 1995 A - 5 2 10OMHz Current Feedback Video Amplifier Description Features Wide Unity Gain Bandwidth. 100MHz Slew R ate. 800V/|is |
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10OMHz 100MHz 00b004b | |
Contextual Info: SURFACE MOUNT Ferrite Chip Beads NCB Series STYLE 1 EIA Size Chips STYLE 2 TERMINATION (Nickel Barrier With Solder Plate Finish) ^- YZZZZ2 PART NUMBERING SYSTEM NCB 0805 A 121 V S ///A TR^ Packaging: TR = Tape a nd Reel - Im pedance at 10OMhz 3 d ig it co d e ; firs t tw o d ig its a re s ig n ifica n t th ird d ig it is no. of ze ro s |
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10OMhz | |
Contextual Info: m HA-5004 HARRIS S E M I C O N D U C T O R March1993 10OMHz Current Feedback Amplifier Features Description • Slew R ate. 1200V/|is The HA-5004 current feedback amplifier is a video/wideband amplifier optimized for low gain applications. The design is |
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HA-5004 10OMHz HA-5004 100MHz | |
FERRANTI ELECTRONICS
Abstract: ferranti electron gun CRT Ferranti Semiconductors 4946 ZN454CJ ZN464CJ 74605 Ferranti iNTEGRATED circuits
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100MHz ZN454CJ 203047F ZN454CJ 28-Lead FERRANTI ELECTRONICS ferranti electron gun CRT Ferranti Semiconductors 4946 ZN464CJ 74605 Ferranti iNTEGRATED circuits | |
Contextual Info: IBM13M13734BCA 128M x 72 2-Bank Registered SDRAM Module Features • 168-Pin Registered 8-Byte Dual In-Line Memory Module • 128Mx72 Synchronous DRAM DIMM -75A : R eg: : DIMM CAS Latency : f CK ; Clock Frequency ; Clock Cycle IW : | Clock Access Tim e j Units ; |
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IBM13M13734BCA 168-Pin 128Mx72 | |
CY2282-1
Abstract: CY2282-11S DD25
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CY2282-1 CY2282-11S 100-MHz CY2282-11S 28-pin CY228erein CY2282-1 DD25 | |
30-RCT
Abstract: 208H
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30-RCT 1000pF 350uH 100KHz 100mV 100KHz-100MHz) 100MHz-125MHz) -18dB 30MHz 80MHz 208H | |
Contextual Info: S i GEC P L E S S E Y APRIL 1994 ADVANCE INFORMATION S E M I C O N D U C T O R S SL3522 500MHz 75dB LOGARITHMIC / LIMITING AMPLIFIER Supersedes Edition in Professional Products 1C Handbook May 1991 The SL3522 is a monolithic seven stage successive detection logarithmic amplifier integrated circuit for use in the |
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SL3522 500MHz SL3522 100MHz SL3522pad 37bflS22 | |
Contextual Info: S i GEC PLESSEY S I M 1 C O i\ 1> U .T O H ADVANCE INFORMATION S SP8855D 1.7GHz PARALLEL LOAD PROFESSIONAL SYNTHESISER The SP88550 is one of a family of parallel load synthesisers containing all the elements apart from the loop amplifier to fabricate a PLL synthesis loop. Other parts in the |
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SP8855D SP88550 SP8852D SP8854D SP8855D OP-27G L7812CP BB405B 40MHz | |
RJ-9
Abstract: 208H
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1000PF 500Vrms 350uH 100KHz 100mV 5MHz-100MHz -18dB 5MHz-40MHz 12-20LOG -35dB RJ-9 208H | |
TB 1226 BN
Abstract: 531 T70 n03 0AS001 B05AD 2U 34
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450NX 82454NX 82453NX 82452NX TB 1226 BN 531 T70 n03 0AS001 B05AD 2U 34 | |
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038329Contextual Info: IBM038329PQ6 IBM038329NQ6 256K x 32 Synchronous Graphics RAM Features • Fully synchronous; all signals registered on pos itive edge ot system clock. Single 3.3V + 0.3 100-pin LQFP 0.65mm lead pitch • Internal pipelined operation; column address can be changed every clock cycle. |
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IBM038329PQ6 IBM038329NQ6 10OMhz cycles/16ms cycles/128ms 038329 | |
Contextual Info: cP IITSU July 1998 Revision 1.0 data sheet P D C 16 R V 7 2 4 4 J - 102/10 3 T -S 128MByte (16Mx 72) CMOS, PC/100 Synchronous DRAM Module - ECC (Registered) General Description The PDC16RV7244J-(102/103)T-S is a high performance, 128-megabyte synchronous, dynamic RAM module organized as 16M |
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128MByte PC/100 PDC16RV7244J- 128-megabyte 168-pin, F64442C-( 16Mx4 | |
Contextual Info: cP IITSU July 1998 Revision 1.1 data sheet GOB512UV6431 A -(67/84/100/125)Q-S 4MByte (512Kx 64) CMOS Synchronous Graphic Module General Description The GOB512UV6431 (A)-(67/84/100/125)Q-S is a high performance, 4-megabtye synchronous, graphic RAM module organized |
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GOB512UV6431 512Kx GOB512UV6431 144-pin, B81G83222- 256Kx32 GOB512UV6431A | |
L133AContextual Info: CY7C1346 64K X 36 Synchronous-Pipelined Cache RAM Features The C Y 7 C 1 346 I/O pins can op era te at eith er the 2.5V o r the 3.3V level; the I/O pins are 3.3 V to le ra n t w h en V DDQ=2.5V. • Supports 10O-MHz bus for Pentium and PowerPC operations with zero wait states |
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CY7C1346 10O-MHz 166-MHz 133-MHz 100-MHz L133A | |
Contextual Info: Preliminary CMOS SDRAM KM44S32030 8M X 4Bit X 4 Banks Synchronous DRAM GENERAL DESCRIPTION FEATURES The KM 44S32030 is 134,217,728 bits synchronous high data • JEDEC standard 3.3V pow er supply • LVTTL com patible with m ultiplexed address rate Dynam ic RAM organized as 4 x 8,388,608 w ords by 4 bits, |
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KM44S32030 44S32030 10/AP | |
Contextual Info: DIRFRD006 REVISION RECORD REV Part Number: ECO CHKD 2 —6u 1 —3 u ” 3 —15 u ” 5 —5 0 u ” 4 —3 0 u ” O -W /O LOGO — 1 —W /” F” LOGO * 21.5 1 6 .0 DRFT E5TAB- G 1XXXX-L KO-LEFT LEDiGREEN LED, RIGHT LED:G+0 LED • K4—LEFT LED:GREEN LED, RIGHT LED:Y+0 LED |
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DIRFRD006 DATE2005/4/4 DATE200S/4/4 350uH ATE2005/ DATE2009/4/4 10PIN) D4/02/05 | |
Contextual Info: DIRFRD006 *2 5 ,5 5 *6,50 | o S = > 1 n- *7,73 w4 *3,18 *14,36 1. VOLTAGE RATING 125 VAC RMS. 2 . CURRENT RATING 1.5 AMP. 3. CONTACT RESISTANCE 3 5 MILLIOHMS MAX. 4. INSULATION RESISTANCE 10 00 MEGOHMS MIN @ 5 0 0 VDC. 5. DIELECTRIC STRENGTH 10 00 VAC RMS 60H z, 1 MIN. |
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DIRFRD006 60SEC CYC60sec 1500VAC DATE2005/12/17 DATE200S | |
apd456Contextual Info: 9 MOS INTEGRATED CIRCUIT pPD4564441,4564841,4564163 for Rev. E 64 M-bit Synchronous DRAM 4-bank, LVTTL Description The pPD4564441, 4564841, 4564163 are high-speed 67,108,864-bit synchronous dynamic random-access memories, organized as 4,194,304x4x4, 2,097,152x8x4, 1,048,576x16x4 word x bit x bank , respectively. |
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pPD4564441 pPD4564441, 864-bit 304x4x4, 152x8x4, 576x16x4 54-pin apd456 | |
Contextual Info: Electrical Specifications: @25°C Isolation Voltage: 1500 Vrms INPUT to OUTPUT Turn Ratio: RX=1 CT:1 CT(±5%) TX=1 CT:1 CT(±5%) Rise Time (1 0 — 90%): 2.5ns Typical C w /w : 28pF Max OCL: 350uH M inimum @100KHz 100mV 8mADC Leakage lnductance(TX&RX): 0.5uH Max |
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350uH 100KHz 100mV 10OMHz) 30MHz 40MHz 50MHz 60MHz 80MHz 00MHz | |
6502 microprocessor
Abstract: plessey cla 3000 crompton K-50-50 ferranti ztx SP92701 draw pin configuration of ic 7404 SP9754
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