10R1C Search Results

10R1C Result Highlights (1)

Part	ECAD Model	Manufacturer	Description	Download	Buy
SLW10R-1C7LF		Amphenol Communications Solutions	1.00mm Flex Connectors, SLW-R series, 10 Position, Side Entry ZIF Connector, 1mm (0.039inch) Pitch, Kinked Terminal, Lead-free

10R1C Price and Stock

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C&K RTF10R1C SWITCH ROTARY DIP BCD 100MA 5VDC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	RTF10R1C	Bulk			700	1 - 10 - 100 - 1000 $2.91896 10000 $2.91896	Buy Now
Newark	RTF10R1C	Bulk			700	1 - 10 - 100 - 1000 $3 10000 $3	Buy Now
Sager	RTF10R1C				700	1 - 10 - 100 - 1000 $2.42 10000 $2.32	Buy Now
Amphenol Communications Solutions SLW10R-1C7 CONN FFC FPC BOTTOM 10POS 1MM RA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SLW10R-1C7	Tray			4,800	1 - 10 - 100 - 1000 - 10000 $0.19511	Buy Now
Amphenol Communications Solutions SLW10R-1C7LF CONN FFC FPC BOTTOM 10POS 1MM RA
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	SLW10R-1C7LF	Tray				1 - 10 - 100 - 1000 - 10000 -	Buy Now
Newark	SLW10R-1C7LF	Bulk			4,800	1 - 10 - 100 - 1000 - 10000 -	Buy Now
GAPTEC Electronic GmbH & Co. KG LMT78_15-1.0R1-C DC-DC STEP DOWN REGULATORS
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	LMT78_15-1.0R1-C	Tube			33	1 - 10 - 100 $4.24303 1000 $4.24303 10000 $4.24303	Buy Now
	LMT78_15-1.0R1-C	Reel			350	1 - 10 - 100 - 1000 $3.58266 10000 $3.58266	Buy Now
Vishay Intertechnologies RE75G10R1C02 Resistor, 10.1 Ohm, ? 1%, 30 W, Wirewound, Military Reliability, Solder Lug - Bulk (Alt: RE75G10R1C02)
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Avnet Americas	RE75G10R1C02	Bulk		7 Weeks	5	1 - 10 $18.6282 100 $17.775 1000 $17.775 10000 $17.775	Buy Now

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10R1C Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)	Original	GT10J303	PDF
2-10R1C Abstract: GT10J303 igbt 300V 10A Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation. Enhancement−Mode. High Speed. Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)	Original	GT10J303 2-10R1C GT10J303 igbt 300V 10A	PDF
Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)	Original	GT5J301	PDF
15j301 Abstract: transistor 15j301 GT15J301 2-10R1C Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 15A) Low saturation voltage	Original	GT15J301 15j301 transistor 15j301 GT15J301 2-10R1C	PDF
TOSHIBA IGBT DATA BOOK Abstract: transistor R1A r1a transistor 10R1A 10R1B 2-10R1A Contextual Info: Transistor Outline Package New Isolated Type TO–220NIS Package Outline Dimensions Outline Dimensions Unit: mm 2.7 ±0.2 10.0 ±0.3 5.6 max 1.1 1.1 0.75 ±0.15 2.54 ±0.25 15.0 ±0.3 13.0 min 3.9 3.0 φ3.2 ±0.2 2 3 0.75 ±0.15 4.5 ±0.2 1 2.6 2.54 ±0.25	Original	220NIS 220NIS 10C1A 10R1A 10R1B 10R1C TOSHIBA IGBT DATA BOOK transistor R1A r1a transistor 10R1A 10R1B 2-10R1A	PDF
GT15J301 Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation l Enhancement−Mode l High Speed : tf = 0.30µs Max. (IC = 15A) l Low Saturation Voltage	Original	GT15J301 GT15J301	PDF
gt10j303 Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS l The 3rd Generation. l Enhancement−Mode. l High Speed. l Low Saturation Voltage. : tf = 0.30µs Max. (IC = 10A)	Original	GT10J303 gt10j303	PDF
10j303 Abstract: IGBT Guide GT10J303 Toshiba c Contextual Info: GT10J303 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT10J303 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed Low saturation voltage : tf = 0.30µs Max. (IC = 10A)	Original	GT10J303 10j303 IGBT Guide GT10J303 Toshiba c	PDF
GT15J301 Abstract: TOSHIBA IGBT Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage	Original	GT15J301 GT15J301 TOSHIBA IGBT	PDF
2-10R1C Abstract: 5J301 GT5J301 Toshiba c Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS Third-generation IGBT Enhancement mode type High speed : tf = 0.30µs Max. (IC = 5A) Low saturation voltage	Original	GT5J301 2-10R1C 5J301 GT5J301 Toshiba c	PDF
Contextual Info: GT15J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT15J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 15A) Low Saturation Voltage	Original	GT15J301	PDF
Contextual Info: GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mm STROBE FLASH APPLICATIONS l High Input Impedance l Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 170A) l Enhancement−Mode l 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)	Original	GT15G101	PDF
GT15G101 Contextual Info: GT15G101 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N-CHANNEL IGBT GT15G101 Unit: mm STROBE FLASH APPLICATIONS High Input Impedance Low Saturation Voltage : VCE sat = 8V (Max.) (IC = 170A) Enhancement−Mode 20V Gate Drive MAXIMUM RATINGS (Ta = 25°C)	Original	GT15G101 2-10R1C GT15G101	PDF
GT5J301 Contextual Info: GT5J301 TOSHIBA INSULATED GATE BIPOLAR TRANSISTOR SILICON N CHANNEL IGBT GT5J301 Unit: mm HIGH POWER SWITCHING APPLICATIONS MOTOR CONTROL APPLICATIONS The 3rd Generation Enhancement−Mode High Speed : tf = 0.30µs Max. (IC = 5A) Low Saturation Voltage : VCE (sat) = 2.7V (Max.) (IC = 5A)	Original	GT5J301 GT5J301	PDF

transistor R1A Abstract: r1a transistor 10R1A 10R1B Contextual Info: Transistor Outline Package New Isolated Type TO–220NIS パッケージ外形図パッケージ形状および寸法単位 : mm 2.7 ±0.2 10.0 ±0.3 5.6 max 1.1 1.1 0.75 ±0.15 2.54 ±0.25 15.0 ±0.3 13.0 min 3.9 3.0 φ3.2 ±0.2 2 3 0.75 ±0.15 4.5 ±0.2	Original	220NIS 10R1A 10R1B 10C1A 10R1C transistor R1A r1a transistor 10R1A 10R1B	PDF