10TNA Search Results

Contextual Info: SILICON NPN EPITAXIAL TYPE PCT PROCESS 2SC3671 ST0R0B0 FLASH APPLICATIONS. MEDIUM POWER AMPLIFIER APPLICATIONS. Unit in ram . High DC Current Gain and Excellent hFE Linearity : hFE(l)=140~450 (VCE=2V, : h F E(2)=70(Min.) Ic =0.5A) (VC E=2V, IC=4A) . Low Saturation Voltage

PO7C

Abstract: 2SC2380 2SC238
Contextual Info: SILICON NPN EPITAXIAL PLANAR TYPE 2SC2380 Unit in m m UHF BAND POWER AMPLIFIER APPLICATIONS. FEATURES : . Output Power : P0 =12W Min. (f=470MHz, V C C=12.6V, Pi=3W) . 1 0 0 % T e s t e d f o r L o a d M i s m a t c h S t r e s s at A l l P h a s e A n g l e s w i t h 30:1 V S W R

40U25

Contextual Info: GaAs IRED S PHOTO-TRIAC T L P 3 5 2 7 U nit in mm T R I A C DR I V E R PROGRAMMABLE CONTROLLERS AC-OUTPUT MODULE S O LI D S T A T E R E L A Y 9 T h e T O S H I B A T L P 3 5 2 7 c o n s i s t s of a zero v o l t a g e U 13 15 19.8 2 ± 0 . 2 5 c r o s s i n g t u r n - o n p h o t o - t r i a c o p t i c a l l y c o u p l e d to

PJ 969 diode

Abstract: MP4012 PJ 969
Contextual Info: MP4012 SILICON NPN EPITAXIAL TYPE_ DARLINGTON POWER TRANSISTOR 4 IN 1 HIGH POWER SWITCHING APPLICATIONS. INDUSTRIAL APPLICATIONS _Unit in mm HAMMER DRIVE, PULSE MOTOR DRIVE AND INDUCTIVE 25.2±0-2 LOAD SWITCHING. . Small Package by Full Molding.

2SC3745

Abstract: MARKING CL3
Contextual Info: 2SC3745 SILICON NPN EPITAXIAL PLANAR TYPE Unit in mm UHF-C BAND LOW NOISE AMPL I F I E R APPLICATIONS. + 0.2 2.9- Q 3 FEATURES: • High Gain • Low Noise Figure NF=2.OdB Typ. • High fT fT=6.5GHz(Typ.) 4 ¿r LL |s2ie|2=12dB(Typ.) d o 0> -} 3 1 1 _.J_ 1

0T39

Contextual Info: TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA "H <D I S C R E T E / O P T O » F | ciDci7SSG OOlbbbfl 3 1~~ 99D 16668 D T- TOSHIBA FIELD EFFECT TRANSISTOR SEMICONDUCTOR 2 S K 3 8 8 SILICON N CHANNEL MOS TYPE TECHNICAL DATA 7T-MOS ) INDUSTRIAL APPLICATIONS Unit in tnm

2SC50

Abstract: BO160
Contextual Info: \"~P ffe i • 2 S C 5 0 1 3 í S jÉ B B : B JS S fiíl^ íttiíio • 2 S C 5 01 4 BU f f l * : iü m ffiH W ifflfflo • 2 SC 5 01 5 B B W É : s a m g Vc e o V 10 Ve b o (V ) i MS S i i : VHF/UHF f i i t a i t S f f l o # Ä : ÍI# B ttE lS o a ^

MC301

Abstract: MA862
Contextual Info: - 66 - — K W r " J « S - fê fi •M A 862 & T ffljÉ : VHF/UHF VR V I f Í iüA) S I'o » » f P f f i f í í r F ) * « « . ' . , 1 0 3 A = m y f ' y ffí , T O : VHF ft Cd ( p F) 1.20 Vr =6V, f=lMHz r?(Q) 0.65 I f =2h A, f=100MHz Vr (¥) 1r (u A)

PL-2030

Abstract: 4006B
Contextual Info: HARRIS SEMICOND M.4E SECTOR D m M302271 HARRIS • F u lly static operation High*Voltage Types 2 0 -V o lt Rating ■ Permanent register storage w ith c lo ck line high o r lo w — no in fo rm a tio n recircu la tio n required Features: ■ S h iftin g rates up to 12 M H z @ 1 0 V (ty p .)

2SK2494-01

Abstract: 003A
Contextual Info: SPECIFICATION DEVICE NAME : TYPE NAME : Power MOSFET 2SK 2 4 9 4- 0 1 SPEC. No. Fuji E l e c t r i c Co.,Ltd This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fiiji Electric C o j i d . i CHECKED '/u Y 0257-R-004a 1 . Scope This specifies Fuji power MOSFET

Contextual Info: UN IT R O D E C O R P / U N I T R O D E IC M3E D ^ 3 4 0 5 1 ^ DDlSDMfl □ « U N I IN T E G R A T E D C IR C U IT S LAS 1900 U N ITR O D E 5 AMP POSITIVE VOLTAGE REGULATORS T-5S-//-/3 FEATURES DESCRIPTION • Guaranteed Power Dissipation 50 Watts a 80°C C ase

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG50G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

5633

Abstract: 40SPR 5613 ESBG5603 ESBR5603 SBG5603 SPG5623 SPY5603 espy
Contextual Info: AC INTERFACE INC 10E D | 0DB33Û3 OOOOIME T | Stanley; - STANLEY SUPER BRIGHT ^ LED LAMP 5603 T - H I - 3 .1 ./5 T-1 3 4 ÍT Y P E 5613 5623 I- { 5633 ; SERIES ISELECTIO N G U ID E C O LO R. MATERIAL • GaAIAs Red GaAsP GaP GaP Green GaP GaP V, .-¡» s.» *

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC3041

Contextual Info: 2SC3041 No. 9 98 N041 a - SANYO * " N P N = M iÆ ifc7 V — X X -f •Ä B J I f * %• VCBOâ 5 0 0 V . ■ a ^ -y ^ V <? a t í ' ASO K . • S f e í 'f í x ^ ü E Í & A k s o lu t e Maximum R a t i n g s /T a = 2 5 ° C 3 U ÿ ÿ • X ï -y i ? Ï J ±

NJU3713

Abstract: NJU3713D NJU3713G P12C CZ514
Contextual Info: N J U3 7 1 3 12-B IT • SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3713 is a 12-bit serial to parallel converter especially apply to MPU outport expander. The effective outport assignment of MPU is available as the connection between NJU3713 and MPU is required

Contextual Info: N J U3 7 1 3 12-B IT • SERIAL TO PARALLEL CONVERTER GENERAL DESCRIPTION The NJU3713 is a 12-bit serial to parallel converter especially apply to MPU outport expander. The effective outport assignment of MPU is available as the connection between NJU3713 and MPU is required

x0606

Abstract: A1318 2SC3331 A1318 U 2SA1318 P370-05 C100 A3060 3060f
Contextual Info: N o . I i (I O A/ 3060 # a-7T Nul 6 0 0 t ÿ li'A K f e 'ÿ l'. P N P / N P N X t , Î'-V -> / ' j U/!✓ -• > JIî V > | -''> » - - ' 2SA1318/2SC3331 ra& • wm’fà.-b' «orîsrsiitti ÜM* *M S M (> I*]W À S < ¡¿tèin-c 3 ,A» . A S Ü ^ IM \ / /

Contextual Info: TT TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA <DISCRETE/OPTO DïfjTaT7E50 0017114 T 99D 17114 DT'Uf-eà) TLR 2I6 GaP RED LIGHT EMISSION Unit in t m FEATURES: . Red All Plastic Mold Type . Rectangular Type Surface Size 2 x2mm) . Low Drive Current, High Intensity Red Light Emission.

Contextual Info: T e m ic BPX99R .S e ni i c » n il u i i Silicon Darlington Phototransistor Description BPX99R is an extra high sensitive monolithic silicon epi­ taxial planar Darlington phototransistor in a hermetically sealed low profile TO—16 metal case. The solid metal base allows the user to mount the device

Contextual Info: TOSHIBA {DISCRETE/OPTO} "H 9097250 TOSHIBA DISCRETE/OPTO » F | ciDci7ESG QGlbbbfl 3 | ~ 99D 16668 D 7 SEMICONDUCTOR 3 ?~/3 TOSHIBA FIELD EFFECT TRANSISTOR 2 SK 3 8 8 SILICON N CHANNEL MOS TYPE (7T-M0S ) TECHNICAL DATA INDUSTRIAL APPLICATIONS Unit in mm

vds3v

Abstract: 2SK274 2SK276
Contextual Info: 'M l- Ç fflG a A s A - * tt i i II ft ft * # M G F 13 0 5 3 V I d s s (mA) 13.00 30.00 45. 00 f f l ü : SHF Î Î ? S i Vg so (V) gm(mS) 25.00 tf jg : N f t ? * y S 7 l ' + ^ ' j r y - I d ( üA) G sl(d B )* 13.00 F GaAs FET. • ÌS^IetÌb!£o ifiiüf^o

2SC24

Abstract: 2sc2498 2SC2471 c1251
Contextual Info: 106 - - Ä * ® — is a ïf • 2 S C 2 47 1 f f l ü : UHF i t t i , mm B ït UHF TV vHF tÿ mmmm 0 2 S C 2 4 8 O ffiÊ : VHF ífcft : fâT K M «#«, m , l ' 5 > ÿ ,/ a MS. • 2 S C 2 4 9 8 « Ê + : VHF/UHF S fë S Il ® S if Vc e o (V) 30 Ve b o (V)

TLR8101

Abstract: TLM8101 8101 opto 8101T tlg8101
Contextual Info: Ti TOSHIBA { D I S C R E T E / O P T 0> 9097250 TOSHIBA DISCRETE/OPTO DËT| ^ 7 2 5 0 □ 0 1 ? a ci7 □ j p 99D 17297 D'T-Ul-á[ T L R 8 101, T L G 8 101, T LM 8101 20-P0INT I-CHANNEL BA R POINT D ISPL A Y . State of Displays. TLR8101 : Red :10-Point TLG8101 i Green:10-Point