10V 10A SCHOTTKY DIODE Search Results

AO4705

Abstract: AO4705L
Contextual Info: AO4705 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4705 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC

GF4810

Abstract: MOSFET with Schottky Diode
Contextual Info: GF4810 N-Channel MOSFET & Schottky Diode MOSFET: VDS 30V RDS ON 13.5mΩ ID 10A Schottky: VR 30V VF 0.53V IF 4.0A SO-8 0.197 (5.00) 0.189 (4.80) 5 8 0.157 (3.99) 0.150 (3.81) 0.244 (6.20) 0.228 (5.79) 4 1 0.020 (0.51) 0.013 (0.33) 0.050 (1.27) H C N TREENFET oduct

Alpha Products

Abstract: ao4703 10A Schottky mosfet with schottky body diode
Contextual Info: AO4703 P-Channel Enhancement Mode Field Effect Transistor with Schottky Diode General Description Features The AO4703 uses advanced trench technology to provide excellent RDS ON and low gate charge. A Schottky diode is provided to facilitate the implementation of non-synchronous DC-DC

Contextual Info: AP6950GMT-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE D1 ▼ Simple Drive Requirement ▼ Easy for Synchronous Buck CH-1 G1 Converter Application ▼ RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET N-CHANNEL 30-V D-S MOSFET WITH SCHOTTKY DIODE  DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications:

AP-692

Abstract: AP6923
Contextual Info: AP6923GMT-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE D1 ▼ Simple Drive Requirement ▼ Easy for Synchronous Buck CH-1 G1 Converter Application ▼ RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description

nc10g

Contextual Info: v G eneral S e m ic o n d u c t o r _ GF4810 N-Channel MOSFET & Schottky Diode MOSFET:Vd s 30V RdS ON 13.5mQ Id 10A Schottky: V r 30V V f 0.53V If 4.0A • # SO-8 ft R 0.189 (4.80) u_o 0.157(3.99,1 0.150 0.244 (6.2P) 0.228 (5.79) I HTU -u r s it i Dim ensions in inches

Contextual Info: AP6923GMT-HF Halogen-Free Product Advanced Power Electronics Corp. DUAL N-CHANNEL MOSFET WITH SCHOTTKY DIODE D1 Simple Drive Requirement Easy for Synchronous Buck CH-1 G1 Converter Application RoHS Compliant & Halogen-Free D2/S1 CH-2 G2 Description S2 Advanced Power MOSFETs from APEC provide

ap4810

Contextual Info: AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement D D ▼ Good Recovery Time D D G S 30V RDS ON 13.5mΩ ID ▼ Fast Switching Performance SO-8 BVDSS 11A S S D Description Advanced Power MOSFETs from APEC provide the

ap4810

Contextual Info: AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE Simple Drive Requirement BVDSS D D Good Recovery Time RDS ON D D Fast Switching Performance ID G SO-8 S 30V 13.5m 11A S S D Description Advanced Power MOSFETs from APEC provide the

Si4810DY

Contextual Info: SPICE Device Model Si4810DY N-Channel 30-V D-S Rated MOSFET + Schottky Diode Characteristics • N-channel Vertical DMOS • Macro-Model (Sub-circuit) • Level 3 MOS • Applicable for Both Linear and Switch Mode • Applicable Over a -55 to 125°C Temperature Range

ap4810

Abstract: AP4810GSM
Contextual Info: AP4810GSM RoHS-compliant Product Advanced Power Electronics Corp. N-CHANNEL MOSFET WITH SCHOTTKY DIODE ▼ Simple Drive Requirement D D ▼ Good Recovery Time D D G S 30V RDS ON 13.5mΩ ID ▼ Fast Switching Performance SO-8 BVDSS 11A S S D Description Advanced Power MOSFETs from APEC provide the

AON7704

Abstract: Design with PIN diode alpha 30v 10a smps diode fr 202 DSA0021
Contextual Info: AON7704 N-Channel Enhancement Mode Field Effect Transistor SRFET TM General Description Features TM SRFET AON7704/L uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

static characteristics of mosfet

Abstract: MOSFET dynamic parameters 5V GATE TO SOURCE VOLTAGE MOSFET mosfet with schottky body diode power mosfet 500 A POWER MOSFET Rise Time 1 ns schottky diode 100A 10A Schottky all mosfet equivalent book ut4810d-s08-r
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD UT4810D Power MOSFET N-CHANNEL 30-V D-S MOSFET WITH SCHOTTKY DIODE „ DESCRIPTION SOP-8 As trench FET Power MOSFETS, N-channel MOSFET with schottky diode, the UTC UT4810D shows fast switching and low gate charge features. And it can be used in such applications:

AON7704

Contextual Info: AON7704 30V N-Channel MOSFET SRFET TM General Description Features TM SRFET AON7704 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS ON ,and low gate charge. This device is suitable for use as a low side FET in SMPS,

Contextual Info: FDS6690AS tm 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

FDS6690AS

Abstract: FDS6690AS equivalent FDS6690A 10a45
Contextual Info: tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

Contextual Info: PD- 95272 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses Co-Packaged • Low Switching Losses • Low Vf Schottky Rectifier • Lead-Free IRF7335D1PbF

IRF7335D1

Contextual Info: PD- 94546 IRF7335D1 • Co-Pack Dual N-channel HEXFET Power MOSFET and Schottky Diode • Ideal for Synchronous Buck DC-DC Converters Up to 11A Peak Output • Low Conduction Losses • Low Switching Losses • Low Vf Schottky Rectifier Dual FETKY™ Co-Packaged Dual MOSFET Plus Schottky Diode

FDS6690AS equivalent

Abstract: fds6690as diode MARKING A1 FDS6690AS-NL
Contextual Info: tm FDS6690AS 30V N-Channel PowerTrench SyncFET General Description Features The FDS6690AS is designed to replace a single SO-8 MOSFET and Schottky diode in synchronous DC:DC power supplies. This 30V MOSFET is designed to maximize power conversion efficiency, providing a low

st 95160

Contextual Info: PD- 95160 IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free Description FETKY MOSFET & Schottky Diode 1 8 K A 2 7 K S

Contextual Info: PD- 95160A IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4

IRF7807D1

Contextual Info: PD- 95160A IRF5803D2PbF TM l l l l l l Co-packaged HEXFET Power MOSFET and Schottky Diode Ideal For Buck Regulator Applications P-Channel HEXFET® Low VF Schottky Rectifier SO-8 Footprint Lead-Free FETKY MOSFET & Schottky Diode A A S G 1 8 K 2 7 K 3 6 4