10V SOT 23 Search Results

Contextual Info: Small-Signal DMOS Transistors Package Leaded VDSS Volt TO-92 TO-92 N-Channel P-Channel 50 60 240 BS250 2N7000 Surface Mount SOT-23 SOT-23 ID mA RDS(ON) (Ω) @ VGS /ID BSN20 + 100 15 10V / 100mA 2N7002 250 3 10V / 500mA 250 5 10V / 200mA 300 5 10V / 500mA

BS250

Abstract: Bs170 P-channel equivalent of BS250 equivalent of BS170 2n7000 equivalent BS170 2N7000 bs170 datasheet BS250 datasheet 2N7002
Contextual Info: SMALL SIGNAL DMOS TRANSISTORS Package VDSS Volt Leaded TO-92 Surface Mount Device SOT-23 ID (mA) RDS(ON) (Ω) @VGS / ID 250 7.5 10V / 500mA 250 5 10V / 200mA 2N7000 300 5 10V / 500mA BS170 300 5 10V / 200mA N-Channel P-Channel N-Channel P-Channel 2N7002

SOT-353

Abstract: SOT-23-6L GMS05 MMBZ15 1-10V GCDA05 GMDA05 GMF05 GMS05F 5110v
Contextual Info: Unidirectional ESD Protection Devices Package SOD-323 1 Line 2 Lines 4 Lines SOT-23 SOT-23-6L SOT-23-5L SOT-353 SOT-363 LLP75 SO-8 Pulse Power PPPM W GTZ-series + Voltage Range max. Capacitance Air Contact Discharge Discharge Ctot (pF) PD: 200mW VZ: 5.1-10V

bs250

Abstract: 2n7002 2n7000 BS170
Contextual Info: SMALL SIGNAL DMOS TRANSISTORS TO-92 SOT-23 • VDSS Voll % •d r DS(ON) (mA) (fl) «VfiS/lD 250 7.5 10V/500m A 250 5 10V/200mA 2N7000 300 5 10V/500mA BS170 300 5 10V/200mA N-Channel P-Channal 60 N-Channel P-Channel 2N7002 BS250 BS850 BS870 94

LT1460

Abstract: LT1460HCS3-10 LT1460JCS3-10 LT1460KCS3-10 sot-23 Marking c1 3V REGULATOR SOT-23 precision 0 to 100ma current source
Contextual Info: Final Electrical Specifications LT1460S3-10 SOT-23 10V Micropower Series Reference in SOT-23 July 1999 U DESCRIPTION FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ 3-Lead SOT-23 Package Low Drift: 20ppm/°C Max High Accuracy: 0.2% Max Low Supply Current: 270µA Max

transistor WT3

Contextual Info: Product specification WNM3003 N-Channel, 30V, 4.0A, Power MOSFET V BR DSS Rds(on) (Ÿ) 0.033@ 10V 30V 0.033@ 10V 0.043 @ 4.5V SOT-23 D Descriptions 3 The WNM3003 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS

Contextual Info: AO3406 N-Channel Enhancement Mode Field Effect Transistor TO-236 SOT-23 Top View Features D VDS (V) = 30V ID = 3.6A (VGS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V) S General Description G The AO3406 uses advanced trench technology to

Contextual Info: TC54 Voltage Detector Features: General Description: • ±2.0% Detection Thresholds • Small Packages: 3-Pin SOT-23A, SOT-89, and TO-92 • Low Current Drain: 1 µA, typical • Wide Detection Range: 1.1V to 6.0V • Wide Operating Voltage Range: 0.7V to 10V

using the TC54 voltage detector

Contextual Info: TC54 Voltage Detector Features General Description • ±2.0% Detection Thresholds • Small Packages: 3-Pin SOT-23A, SOT-89, and TO-92 • Low Current Drain: 1 µA, typical • Wide Detection Range: 1.1V to 6.0V • Wide Operating Voltage Range: 0.7V to 10V

54vn

Abstract: TC54 sot 86 marking CODE e3 54vn3002 TC54VN TC54VX14 TC54VX21 TC54VX27 TC54VX30 using the TC54 voltage detector
Contextual Info: TC54 Voltage Detector Features General Description • ±2.0% Detection Thresholds • Small Packages: 3-Pin SOT-23A, SOT-89, and TO-92 • Low Current Drain: 1 µA, typical • Wide Detection Range: 1.1V to 6.0V • Wide Operating Voltage Range: 0.7V to 10V

Contextual Info: LESHAN RADIO COMPANY, LTD. 30V P-Channel Enhancement-Mode MOSFET VDS -30V I D V GS = -10V RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -4.1A < 70mΩ < 100m Ω LP3407LT1G 3 1 2 SOT– 23 (TO–236AB) FEATURES The LP3407LT1G uses advanced trench technology to provide

mark A E sot-89-3

Abstract: TC54VX27 TC54VX43 tc54vc2702ecb713 TC54 TC54VN TC54VX14 TC54VX21 Voltage Detector SOT-89 marking
Contextual Info: TC54 Voltage Detector Features General Description • ±2.0% Detection Thresholds • Small Packages: 3-Pin SOT-23A, 3-Pin SOT-89, and TO-92 • Low Current Drain: 1 µA Typical • Wide Detection Range: 1.1V to 6.0V • Wide Operating Voltage Range: 0.7V to 10V

CES2303

Contextual Info: CES2303 PRELIMINARY P-Channel Enhancement Mode Field Effect Transistor FEATURES D -30V , -1.9A , RDS ON =150m Ω (typ) @VGS=-10V. RDS(ON)=230m Ω (typ) @VGS=-4.5V. High dense cell design for low RDS(ON). Rugged and reliable. 7 SOT-23 Package. G SOT-23 D

LP3407LT1G

Contextual Info: LESHAN RADIO COMPANY, LTD. LP3407LT1G S-LP3407LT1G 30V P-Channel Enhancement-Mode MOSFET VDS -30V I D V GS = -10V RDS(ON) (VGS = -10V) RDS(ON) (VGS = -4.5V) -4.1A < 70mΩ < 100m Ω 3 1 2 FEATURES SOT– 23 (TO–236AB) The LP3407LT1G uses advanced trench technology to provide

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300

Marking d12

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300

CES2304

Contextual Info: CES2304 PRELIMINARY N-Channel Enhancement Mode Field Effect Transistor FEATURES D 30V , 2.8A , RDS ON =65m Ω (typ) @VGS=10V. RDS(ON)=90m Ω (typ) @VGS=4.5V. High dense cell design for low RDS(ON). Rugged and reliable. 7 SOT-23 Package. G SOT-23 D S S G

Contextual Info: CHENMKO ENTERPRISE CO.,LTD LTVSQ5VADCES GP-04 STANDARD CAPACITANCE TVS VOLTAGE 5 V 150 WATTS PEAK PULSE POWER FEATURE * 150W Power Dissipation 8/20us Waveform * Low Leakage Current, Maximum of 1uA @ 5Vdc SC-74/SOT-457/SOT-23-6L * Very low Clamping voltage (Max of 10V @ 14A 8/20us)

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (A) 2 @ VGS = 10V 300

FDV305N

Abstract: NDS351AN NDS331N FDN327N supersot-3 FDV301N MOSFET SOT-23 FDV302P MMBF170 rohs FDN335N
Contextual Info: Discrete MOSFET SOT-23 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg (nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) SOT-23/SuperSOT-3 N-Channel FDN339AN 20 Single - 0.035 0.05 - 7 3 0.5 FDN371N 20 Single - 0.05 0.06

Contextual Info: TSM2N7002K 60V N-Channel MOSFET SOT-23 SOT-323 Pin Definition: 1. Gate 2. Source 3. Drain PRODUCT SUMMARY VDS V 60 Features ● Low On-Resistance ● ESD Protected 2KV ● High Speed Switching ● Low Voltage Drive RDS(on) (max) ID (mA) 2 @ VGS = 10V 300

Contextual Info: AO3403 P-Channel Enhancement Mode Field Effect Transistor TO-236 SOT-23 Features VDS (V) = -30V ID = -2.6 A (VGS = -10V) RDS(ON) < 130mΩ (VGS = -10V) RDS(ON) < 180mΩ (VGS = -4.5V) RDS(ON) < 260mΩ (VGS = -2.5V) Top View D General Description S The AO3403 uses advanced trench technology to

Contextual Info: SSS2N7002L N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SOT-23 RDS(ON) ( ) Max D 3.0 @VGS = 10V 60V G 4.0 @VGS = 5V 0.25A S 7.5 @VGS = 2.5V D FEATURES Super high dense cell design for low RDS(ON). G Rugged and reliable. SOT-23 package.

MOSFET N SOT-23

Contextual Info: SSS2N7002K N-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) 60V 0.25A SOT-23 RDS(ON) D 3.0 @VGS = 10V G 4.0 @VGS = 5V S D FEATURES Super high density cell design for low RDS(ON). Gate-source ESD protection diodes. Rugged and reliable. G SOT-23 package.