10VII Search Results

AM97C11CN

Abstract: AM9711CN LM378 equivalent SVI 3102 b LM1850 National Semiconductor LM2706 320l 78l05 lm1900 SVI 3105 B mc1458cp1 sgs
Contextual Info: Edge Index by Function 2 l e i . Voltage Regulators Voltage References Operational Amplifiers/Buffers Instrumentation Amplifiers Voltage Comparators Analog Switches Sample and Hold A to D, D to A 8 Industrial/Automotive/Functional Blocks 9 Audio, Radio and TV Circuits

Contextual Info: TOSHIBA {DI SC RE TE/ OPTO } T i D E ITGTTSSG 99D 16731 9 0 9 7 2 5 0 T O S H IB A Í D I S C R E T E / O P T O ¿Toihihn SEMICONDUCTOR TOSHIBA FIELD EFFECT TRANSISTOR 2 S K 6 4 4 TECHNICAL DATA SILICON N CHANNEL HOS TYPE 7T-M0S 1 ) INDUSTRIAL APPLICATIONS

731 opto

Contextual Info: TOSHIBA -CDISCRETE/OPTO> 9097250 TOSHIBA ¿Toihilli TT DE I T C H 7 2 5 G 001t,731 fc, |~~ 99 0 <DI S C R E T E / O P T O SEMICONDUCTOR T O SH IB A F IE L D E F F E C T T R A N SIST O R 2 S TECHNICAL DATA S IL IC O N 16731 K 6 4 4 N CHANNEL HOS T Y PE I-M O S 1 )

AIL 4

Abstract: 2SA1813
Contextual Info: Ordering number: EN3972 No.3972 SAXYO i 2SA1813 PNP Epitaxial Planar Silicon Transistor Low-Frequency General-Purpose Amp, Driver, Muting Circuit Applications Features • Very small-sized package permitting 2SA1813-applied sets to be made smaller and slimmer.

2SK2058

Contextual Info: Ordering num ber: EN 4315 No.4315 2SK2058 N-Channel MOS Silicon FET Very High-Speed Switching Applications i Features - Low ON resistance. • Very high-speed switching. • Low-voltage drive. Absolute Maximum Ratings at Ta = 25°C Drain-to-Source Voltage

Contextual Info: A dvanced APT8065BVFR pow er Te c h n o lo g y 800V POWER MOS V 13A 0.650Q FREDFET Power MOS V® is a new generation of high voltage N-Channel enhancement mode power MOSFETs. This new technology minimizes the JFET effect, increases packing density and reduces the on-resistance. Power MOS V®

IRFSZ24A

Contextual Info: IRFSZ24A Advanced Power MOSFET FEATURES B V • ■ ■ ■ ■ ■ ■ ■ Avalanche Rugged Technology Rugged Gate Oxide Technology Lower Input Capacitance Improved Gate Charge Extended Safe Operating Area T 7 5 t Operating Temperature Lower Leakage Current : 10 MA Max. @ VOS = 60V

2SK1641

Contextual Info: TO SHIBA 2SK1641 TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE tt- M O SII 2 S K 1 641 HIGH SPEED, HIGH CURRENT SWITCHING APPLICATIONS CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE INDUSTRIAL APPLICATIONS Unit in mm APPLICATIONS 1 5.9 M A X.

2SC3820

Abstract: VEBO-15V Vebo 15V
Contextual Info: Ordering number: EN 2544B 1 N0.2544B _ 2SC3820 NPN Epitaxial Planar Type Silicon Transistor High hpE? AF Amp Applications Applications •Drivers, muting circuits Features • Adoption of FBET and MBIT processes • High DC current gain hpE = 800 to 3200

2SK1731

Abstract: 32593TH EN3826
Contextual Info: Ordering n u m b e r:E N 3 8 2 6 _ 2SK1731 N-Channel MOS Silicon FET No.3826 Very High-Speed Switching Applications F eatu res •Low ON resistance. • Very high-speed switching. • Low-voltage drive. • Its height onboard is 9.5mm. • Meets radial taping.