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    LeaderTech

    LeaderTech 44-CBSA-1.0X1.5X0.4

    RF SHIELD 1" X 1.5" THROUGH HOLE
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    DigiKey 44-CBSA-1.0X1.5X0.4 Bulk 281 1
    • 1 $6.30
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    Newark 44-CBSA-1.0X1.5X0.4 Bulk 2 1
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    RS 44-CBSA-1.0X1.5X0.4 Bulk 10
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    LeaderTech 84-CBSA-1.0X1.5X0.8

    RF SHIELD 1" X 1.5" THROUGH HOLE
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    DigiKey 84-CBSA-1.0X1.5X0.8 Bulk 60 1
    • 1 $18.03
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    Newark 84-CBSA-1.0X1.5X0.8 Bulk 20
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    RS 84-CBSA-1.0X1.5X0.8 Bulk 20
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    LeaderTech 40-CBSA-1.0X1.5X0.4

    RF SHIELD 1" X 1.5" SMD
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    DigiKey 40-CBSA-1.0X1.5X0.4 Bulk 20 1
    • 1 $27.06
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    • 100 $20.78
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    LeaderTech 54-CBSA-1.0X1.5X0.5

    RF SHIELD 1" X 1.5" THROUGH HOLE
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    DigiKey 54-CBSA-1.0X1.5X0.5 Bulk 9 1
    • 1 $29.47
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    Newark 54-CBSA-1.0X1.5X0.5 Bulk 20
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    RS 54-CBSA-1.0X1.5X0.5 Bulk 10
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    • 100 $48.20
    • 1000 $45.52
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    LeaderTech 24-CBSA-1.0X1.5X0.2

    RF SHIELD 1" X 1.5" THROUGH HOLE
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    DigiKey 24-CBSA-1.0X1.5X0.2 Bulk 1 1
    • 1 $28.49
    • 10 $23.00
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    Newark 24-CBSA-1.0X1.5X0.2 Bulk 28
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    RS 24-CBSA-1.0X1.5X0.2 Bulk 10
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    • 100 $35.45
    • 1000 $33.48
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    10X15X0 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2SC2570

    Abstract: 2sc2570 transistor NE02132
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTIO N G AIN: 18.5 dB at 500 MHz • LOW NOISE FIG URE: 1.5 dB at 500 MHz • HIGH PO W ER G AIN: 12 dB at 2 GHz • LARG E DYN AM IC RANG E: 19 dBm at 1 dB,


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    NE021 NE02107 PACKAGEOUTUNE33 OT-23) b427525 00b5b07 2SC2570 2sc2570 transistor NE02132 PDF

    SVI 3104 c

    Abstract: UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720
    Contextual Info: Introduction Small Signal GaAs FETs Power GaAs FETs Small Signal Silicon Bipolar Transistors Power Silicon Bipolar Transistors Silicon Monolithic Circuits GaAs Monolithic Circuits Reliability Assurance Appendix This C atalog is printed on R ecycled Paper California Eastern Laboratories, Inc. reserves the right to make changes to the products or


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    AN83301-1 NE24615 AN83302 AN83303-1 NE71083 NE70083 AN83901 AN85301 11/86-LN AN86104 SVI 3104 c UPC1678G ne333 stb 1277 TRANSISTOR equivalent transistor bf 175 NE85635 packaging schematic NE72000 VC svi 3104 NE9000 NE720 PDF

    Bluetooth Energy Meter ckt diagram

    Abstract: 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11
    Contextual Info: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7170 BY: Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC JUL. 2001 7170 N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification- 3


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    FD501 FD504 FD502 FD503 Bluetooth Energy Meter ckt diagram 94vo r29 Batteries Varta 500 rst 124 Touch pad synaptics Realistic sa-150 rotary encoder EC11 VT82C694X UB133X01 ALC200 humidity temperature sensor sh11 PDF

    8F157

    Abstract: relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D
    Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


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    NE021 NE02135 NE02139 07/07B NE02133" NE02133 8F1573FD7D76BE9F795396E6F54D44. 30-Sep-2010 8F157 relay 3500 1210 241 ne02133t1b ne02133 MARKING NE021-33 Amplifier Micro-X "marking code" D PDF

    2SC1424

    Abstract: 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE734 NE73400 NE73416
    Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • DUAL CHIP CONFIGURATIONS


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    NE734 NE73435) NE734 OT-143) 24-Hour 2SC1424 2SC1733 pt 5767 Rf transistor 2SC2026 transistor 2sc2026 transistor "micro-x" "marking" 3 2SC2148 NE73400 NE73416 PDF

    VT8362

    Abstract: CP2216 VR501 TM41PUM220 kn133 RLS414B B1225 PCI1420 F3437 p4 Titan VRM 10.0
    Contextual Info:    7321              7321 N/B Maintenance Contents Contents 1. Hardware Engineering Specification 4 1.1 Introduction 4 1.2 System Hardware Parts 1.3 Other Functions


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    FD500 DOT040 DOT040 PC500 PR500 FD503 FD502 VT8362 CP2216 VR501 TM41PUM220 kn133 RLS414B B1225 PCI1420 F3437 p4 Titan VRM 10.0 PDF

    OCI 531

    Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION


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    NE73435) NE734 NE73400) NE7343-323) OT-23) 24-Hour OCI 531 PDF

    2SC1424

    Abstract: MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 NE734
    Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIGURE: < 3 dB at 5 0 0 M H z • HIGH GAIN: 15 dB a t 5 0 0 M H z • HIGH GAIN BANDWIDTH PRODUCT: 2 G H z 3 G H z for th e N E 7 3 4 3 5 • SMALL COLLECTOR CAPACITANCE: 1 p F


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    NE734 NE73435) NE73400) PACKAGEOUTUNE30 PACKAGEOUTUNE33 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) 2SC1424 MARKING Dt3 sot23 transistor 2SC2148 017 545 71 32 02 j60 mic mic J60 v3le 2SC202 2SC4185 PDF

    2SC2570

    Abstract: 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135
    Contextual Info: NEC/ bM27414 0DDB354 SB? « N E C C 5bE D CALIFORNIA NEC T 3 V -2 3 NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES DESCRIPTION AND APPLICATIONS • HIGH INSERTION GAIN: 18.5 dB at 500 MHz The NE021 series of NPN silicon transistors provides eco­


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    bM27414 QDDB354 T3V-23 NE021 2SC2570 2sc2570 transistor transistor 2sc2570 NE02103 NE02133 2sc1560 ic 2SC2570 NE02132 NE02100 NE02135 PDF

    Micro-X Marking 865

    Abstract: Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


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    NE021 NE02107 NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B NE02135 NE02139-T1 Micro-X Marking 865 Amplifier Micro-X Marking 865 ne02133 MARKING ic 18752 35 micro-X Package MARKING CODE F PDF

    s-parameter s11 s12 s21

    Abstract: 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431
    Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression s


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    NE021 NE02135 NE02139 NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02139-T1 s-parameter s11 s12 s21 2SC2351 NE02133-T1B GHZ micro-X Package ic 748 marking K "micro x" MICRO-X NE02107 NE02135 sot-23 MARKING CODE 431 PDF

    JF11

    Abstract: NE02133-T1B
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LA RGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 G Hz Gain Com pression


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    NE021 NE02107 OT-23) NE2100 NE02107/NE02107B NE02130-T1 NE02133-T1B JF11 PDF

    SAA 1006

    Abstract: si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression


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    NE021 NE02107 OT-23) SAA 1006 si 18752 K 1723 NE02132 2sc2570 transistor SAA 1058 saa 5000 0958K PDF

    NE02135

    Abstract: NE021 microwave oscillator 2SC2149 2SC2351 NE021 NE02100 NE02107 NE02133 NE02139 MICROWAVE TRANSISTOR
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


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    NE021 NE021 NE02107 NE2100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 24-Hour NE02135 NE021 microwave oscillator 2SC2149 2SC2351 NE02100 NE02133 NE02139 MICROWAVE TRANSISTOR PDF

    NE021 microwave oscillator

    Abstract: 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz • HIGH POWER GAIN: 12 dB at 2 GHz • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


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    NE021 NE021 NE02107 OT-23) 34-6393/FAX NE021 microwave oscillator 2SC2570 NE02132 ic 18752 ic 2SC2570 NE02130 2sc2570 transistor NE02100 K 1723 2SC4225 PDF

    NE02107

    Abstract: 2SC2149 2SC2351 NE021 NE02100 NE02133 NE02135 NE02139 18752 60S12
    Contextual Info: NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES • HIGH INSERTION GAIN: 18.5 dB at 500 MHz • LOW NOISE FIGURE: 1.5 dB at 500 MHz E • HIGH POWER GAIN: 12 dB at 2 GHz B • LARGE DYNAMIC RANGE: 19 dBm at 1 dB, 2 GHz Gain Compression DESCRIPTION


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    NE021 07/07B NE021 NE02100 NE02107/NE02107B NE02133-T1B NE02135 NE02139-T1 NE02107 2SC2149 2SC2351 NE02100 NE02133 NE02135 NE02139 18752 60S12 PDF

    1734471

    Contextual Info: 30.48 = h•<d■ ’d" ro r-. 1.27 X 24 4 9 . 5 f i+ 0 . 0 5 Tu 48.56 0.30 / 0.75 o CH I CM tj CL ^ CM LO o o -H TYP CJ CD _ i CL Ò -a CM O LO 00 0.75 NOTE: _ LI I I —ri 1. MATERIAL: HOUSING: HIGH TEMP. THERMOPLASTIC UL 9 4 V -0 , COLOR: WHITE. CONTACTS: BRASS.


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    PDF

    2SC1424

    Abstract: 2SC4090 017 545 71 32 02 2SC2026
    Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 I • SMALL COLLECTOR CAPACITANCE: 1 pF


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    NE73435) NE734 NE73400) S12S21| 2SC1424 2SC4090 017 545 71 32 02 2SC2026 PDF

    TX38D85VC1CAA

    Abstract: SD6109 DIODE S3V 81 SiS900 lan 30-pin connector for LVDS hannstar foxconn s3v83 qe r542 orion crt monitor circuit diagram MITAC MPU
    Contextual Info: SERVICE MANUAL & TROUBLESHOOTING GUIDE FOR 7521 Plus/N BY: Richard Wang TESTING TECHNOLOGY DEPARTMENT / TSSC AUG. 2001 7521Plus / N N/B MAINTENANCE CONTENTS 1. Hardware Engineering Specification - 3


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    7521Plus TX38D85VC1CAA SD6109 DIODE S3V 81 SiS900 lan 30-pin connector for LVDS hannstar foxconn s3v83 qe r542 orion crt monitor circuit diagram MITAC MPU PDF

    2SC1424

    Abstract: s2l sot23
    Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES • LOW NOISE FIG UR E: < 3 dB at 500 MHz • HIGH G A IN : 15 dB at 500 MHz B • HIGH G AIN BAN D W ID TH PR O D U C T: 2 GHz 3 GHz for the NE73435 • S M A LL C O LLEC TO R C A P A C IT A N C E : 1 pF


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    NE73435) NE734 OT-23) PACKAGEOUTUNE33 PACKAGEOUTUNE39 OT-143) PACKAGEOUTUNE39 2SC1424 s2l sot23 PDF

    2sc2570 transistor

    Abstract: t0-t01 2sc2570 NE02132
    Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE021 SERIES FEATURES_ • HIGH INSERTION GAIN: 1 8 .5 d B at 5 0 0 M H z • LOW NOISE FIGURE: 1 .5 dB a t 5 0 0 M H z • HIGH POWER GAIN: 12 d B at 2 G H z • LARGE DYNAMIC RANGE: 19 d B m at 1 dB ,


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    NE021 OT-23) 2sc2570 transistor t0-t01 2sc2570 NE02132 PDF

    23STYLE

    Contextual Info: NPN SILICON GENERAL PURPOSE TRANSISTOR NE734 SERIES FEATURES_ • LOW NOISE FIGURE: < 3 dB at 500 MHz • HIGH GAIN: 15 dB at 500 MHz • HIGH GAIN BANDWIDTH PRODUCT: 2 GHz 3 GHz for the NE73435 • SMALL COLLECTOR CAPACITANCE: 1 pF • HIGH RELIABILITY METALLIZATION


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    NE73435) NE734 NE73400) NE73400 OT-323) OT-23) 23STYLE PDF