11.171 Search Results

2SC5436

Abstract: 2SC5600 NEC 821
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • 2 different built-in transistors (2SC5436, 2SC5600) Q1: Low noise transistor NF = 1.3 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz

usb 20

Abstract: jim Williams 5401B INCOMING RAW MATERIAL INSPECTION ha 71741 VHDL CODE FOR PID CONTROLLERS usb trackball mouse transistor NEC D 882 p compaq 7500 nec d 882 p datasheet
Contextual Info: Universal Serial Bus Specification Compaq Hewlett-Packard Intel Lucent Microsoft NEC Philips Revision 2.0 April 27, 2000 Universal Serial Bus Specification Revision 2.0 Scope of this Revision The 2.0 revision of the specification is intended for product design. Every attempt has been made to ensure a

nec 14305

Abstract: 14305 NEC k 3918 TRANSISTOR OF IC 7909 2SC5751-T2 2SC5751
Contextual Info: DATA SHEET NPN SILICON RF TRANSISTOR 2SC5751 NPN SILICON RF TRANSISTOR FOR MEDIUM OUTPUT POWER AMPLIFICATION 30 mW FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD FEATURES • Ideal for medium output power amplification • PO (1 dB) = 15.0 dBm TYP. @ VCE = 2.8 V, f = 1.8 GHz, Pin = 1 dBm

irf350

Abstract: 1RF35 2clg
Contextual Info: HE D I MflSS4S2 GQOTISE T | INTERNATIONAL RECTIFIER Data Sheet No. PD-9.304G T - lî z L l— INTERNATIONAL RECTIFIER IOR HEXFET TRANSISTORS IRF3SO fo IRF351 IRF3SS IM - C h a n n e l IRF353 Features: 400 Volt, 0.3 Ohm HEXFET The HEXFET technology is the key to International

Contextual Info: T • bb53131 □ D3333tl 330 HIAPX N APIER PHILIPS/DISCRETE b'lE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The

2N3033

Contextual Info: , One, J. C/ TELEPHONE: 973 376-2922 (212) 227-6005 FAX: (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N3033 SILICON NPN SWITCHING TRANSISTOR DESCRIPTION: The 2N3033 is Designed for Avalanche-Mode Very Fast Switching Applications. PACKAGE STYLE TO-18

148235

Abstract: A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 89451 170267 74237
Contextual Info: Agilent AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Features • Wide frequency range: 16 - 32 GHz • High gain: 22 dB • Low 50 Ω Noise Figure: 2.6 dB Chip Size: 1900 x 800 mm 74.8 x 31.5 mils Chip Size Tolerance: ± 10mm (± 0.4 mils) Chip Thickness: 100 ± 10mm (4 ± 0.4 mils)

63387

Abstract: 147709 51952 148235 A004R AMMC-6231 AMMC-6231-W10 AMMC-6231-W50 60673 82291
Contextual Info: AMMC-6231 16–32 GHz Low Noise Amplifier Data Sheet Chip Size: 1900 x 800 µm 74.8 x 31.5 mils Chip Size Tolerance: ± 10 µm (± 0.4 mils) Chip Thickness: 100 ± 10 µm (4 ± 0.4 mils) RF Pad Dimensions: 110 x 90 µm (4.33 x 3.54 mils) DC Pad Dimensions: 100 x 100 µm (3.94 x 3.94 mils)

554-1

Abstract: 2SC5435 2SC5600
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

136.21

Abstract: 901 704 16 08 55 TGA4501-EPU TGA4501-SCC 914-28 51815
Contextual Info: S-Parameter Data for TGA4501-SCC TGA4501-EPU Vd = 6V, Id = 2.12A ±5% Frequency GHz 20 20.1 20.2 20.3 20.4 20.5 20.6 20.7 20.8 20.9 21 21.1 21.2 21.3 21.4 21.5 21.6 21.7 21.8 21.9 22 22.1 22.2 22.3 22.4 22.5 22.6 22.7 22.8 22.9 23 23.1 23.2 23.3 23.4 23.5

5E25

Abstract: 2SC5600
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA891TC NPN SILICON RF TRANSISTOR WITH 2 ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUMER MINIMOLD FEATURES • Built-in low phase distortion transistor suited for OSC operation fT = 5.0 GHz TYP., S21e2 = 4.0 dB TYP. @ VCE = 1 V, IC = 5 mA, f = 2 GHz

marking 2w

Abstract: 2SC5600 2SC5737
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA858TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5737, 2SC5600)

Contextual Info: REVISION AF MEC1-1XX-XX-XX-D-RAX-XX-SL-XX PATENT NUMBER 6159045 DO NOT SCALE FROM THIS PRINT No OF POSITIONS- 1 -05, -08, -20, -30, -40, -50 SEE FIG 1 -60 & -70 (SEE FIG 2, SHT 3) (PER ROW) "D" REF • ^ — OPTION -TR: TAPE & REEL (SUBSTITUTE -T: FOR-TR:

Contextual Info: 5D-39900-007 NO. OF CI RC. DI M. DIM. DI M. DIM. "A" "B" "C" " D" ASSEMBLY MATERI AL NO. STANDARD 1 ASSEMBLY MATERI AL NO. ( - 10AV O P T . 1 18.2 1 .721 3.81 1.1501 1 2 . 80 1 .5041 8.8 1.351 3 9 9 0 0 1 8 02 399 0 2 1 8 02 03 22.0 1 .871 7.62 1.3001 16.61

2SC5751

Abstract: nec 14305 2SC5751-T2 P15657JJ1V0DS
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

2SC5600

Abstract: 2SC5668
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

2SC5600

Abstract: 2SC5737 marking 2w IC 7432 NAME
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

uPA849TC-T1

Abstract: 2SC5437 2SC5600 IC 7806 pin details
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

MARKING CODE 42t

Abstract: Transistor 0270 BF marking 42t 269-3 fe 4276 9712 transistor BF 502 TRANSISTOR Bf 522 BFT93 BFT93W FC 0137
Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures

Philips FA 564

Contextual Info: Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEATURES DESCRIPTION • High power gain Silicon PNP transistor in a plastic, SOT323 S-mini package. The BFT93W uses the same crystal as the SOT23 version, BFT93. • Gold metallization ensures

TRANSISTOR D 5702

Abstract: OA95 Transistor MJE 5331 l3 sot323 transistor BF 502 BFT93 BFT93W FC 0137 transistor 1661 equivalent 206 transistor specification sheet
Contextual Info: m □ 0 3 2 2 3 ‘ì 3 2 0 H I A P X N A PIER P H I L I P S / D I S C R E T E bTE D Philips Semiconductors Product specification PNP 4 GHz wideband transistor BFT93W FEA TU R E S D ES C R IPTIO N • High power gain Silicon PNP transistor in a plastic, S O T 323 S-mini package. The

ZO 607 MA

Abstract: 421-5 RF NPN POWER TRANSISTOR C 10-12 GHZ 552-1 741 IC data sheet 901 704 16 08 55 2SC5436 2SC5600 A 3120 0532 8 pin a 3120 0537
Contextual Info: DATA SHEET NPN SILICON RF TWIN TRANSISTOR µPA842TC NPN SILICON RF TRANSISTOR WITH 2 DIFFERENT ELEMENTS IN A FLAT-LEAD 6-PIN THIN-TYPE ULTRA SUPER MINIMOLD FEATURES • Flat-lead 6-pin thin-type ultra super minimold package • 2 different built-in transistors (2SC5436, 2SC5600)

ha 1452

Abstract: 10.3814 10.0729 10.3815 112-361 STA-1100 43652 10.1550 101239 10.5022
Contextual Info: EPIC CONNECTORS OLFLEX ® C A BL E “The Perfect Connection” 800-774-3539 www.lappusa.com EPIC® CONNECTORS Rectangular Industrial Connectors: Technical Data Overview 1. Strain Relief: Strain Relief provides a seal between the cable and the connector housing. It may also be

C0840

Abstract: I100R
Contextual Info: REVISIONS LTR DATE YR-MO-OA DESCRIPTION APPROVED 89 AUG 18 Add figure 4. Technical changes to 1.3, 1.4» table I, and table II. Change terminal connections. Editorial changes throughout. REV SHEET REV SHEET REV STATUS OF SHEETS REV SHEET PMIC N/A STANDARDIZED